421000 60 Search Results

TTL 7404

Abstract: D421000 pd421000 D42100
Contextual Info: J V I V C2 NEC Electronics Inc. A P P L IC A T IO N N O TE 53 ^ P D 421000///P D 421001///P D 421002 1- m e g a b i t d y n a m i c r a m s Description N E C ’s aiPD421000, /¿PD421001, and /¿PD421002 are 1-m e g a b it d y n a m ic R AM s D R A M s m an u fa ctu re d w ith

NEC 421000

Abstract: PD421000 NEC IC D 553 C
Contextual Info: NEC //P D 4 2 1 0 0 0 1 ,0 4 8 ,5 7 6 x 1 -B IT D YN A M IC CMOS RAM NEC Electronics Inc. Description The//PD421000 is a fast-page, 1,048,576-word by 1-bit dynam ic CMOS RAM designed to operate from a single + 5 -vo lt power supply. The device is fabricated with

PE4210

Contextual Info: Advance Information PE4210 SPDT Low Insertion Loss MOSFET RF Switch Features • Single 3.0 V Power Supply • Low Insertion loss: . 39dB at 1 GHz, .42dB at 2 GHz • High isolation of 32 dB at 1 GHz, 26 dB at 2 GH • Typical1 dB compression = +10dBm • CMOS logic control

Contextual Info: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 60% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz

PE4210

Abstract: PE4210-EK
Contextual Info: PRELIMINARY SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 Low Insertion Loss MOSFET RF Switch is designed to cover a broad range of uses in the 10 MHz through 2.5 GHz frequency range. This switch integrates on-board CMOS control logic and eliminates the need for

tgf2023-2-05

Contextual Info: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 62% Maximum PAE

nec 424256

Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
Contextual Info: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power

Contextual Info: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 64% Maximum PAE

PE4210-08MSOP-50A

Abstract: marking 8C PE4210 PE4210-08MSOP-2000C PE4210-EK
Contextual Info: PRODUCT SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL

Contextual Info: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven

PE4210

Abstract: PE4210-08MSOP-2000C PE4210-08MSOP-50A PE4210-EK
Contextual Info: PRODUCT SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL

tgf2023-2-20

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE

Contextual Info: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven

Contextual Info: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven

PE4210G-08MSOP-50A

Abstract: PE4210 PE4210-08MSOP-2000C PE4210-08MSOP-50A PE4210-EK PE4210G-08MSOP-2000C
Contextual Info: Product Specification PE4210 SPDT UltraCMOS RF Switch DC - 3000 MHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from near DC to 3000 MHz. This single-supply switch integrates on-board CMOS control logic

Contextual Info: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Features • Single 3-volt power supply  Low Insertion loss: 0.30 dB at 1000 MHz, 0.45 dB at 2000 MHz gn The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven

424256 pin out

Abstract: TIO 872-M 424256 pd42256 nec 424256 DG342
Contextual Info: blE ]> • bM27525 D O a m 1!? DMT MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. N E C 0. 3 - ELECTRONICS INC Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic

Contextual Info: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 69% Maximum PAE 18 dB Nominal Power Gain at 3 GHz

BH-80

Abstract: NEC 421000 MC-421000A36
Contextual Info: NEC ELECTRONICS INC me 3ÖE D B bM27525 QQ3175t> 1 BINECE t - ï w NEC Electronics Inc. j - p MC-421000A36 1,048,576 X 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The M C -421000A 36is a fast-page dynam ic RAM module organized as 1,048,576 words by 36 bits and designed

424256 memory

Abstract: 424256
Contextual Info: SEC MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Prelim inary Information April 1992 Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single +5-volt power

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE D e s c r ip t io n Th e M C -4 2 1 0 0 0 A 3 2 B A , 4 2 1 0 0 0 A 3 2 F A are 1,048,576 w o rd s by 32 bits d yn a m ic R A M m o d u le on w h ich 2 p ie ce s

41256 dram

Contextual Info: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single + 5-volt power

UD42256

Abstract: 42256
Contextual Info: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single +5-volt power

Contextual Info: JUL »1 1902 NEC NEC Electronics Inc. MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module Preliminary Information June 1992 Description Pin Configuration The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits