421000 60 Search Results

TTL 7404

Abstract: D421000 pd421000 D42100
Contextual Info: J V I V C2 NEC Electronics Inc. A P P L IC A T IO N N O TE 53 ^ P D 421000///P D 421001///P D 421002 1- m e g a b i t d y n a m i c r a m s Description N E C ’s aiPD421000, /¿PD421001, and /¿PD421002 are 1-m e g a b it d y n a m ic R AM s D R A M s m an u fa ctu re d w ith

NEC 421000

Abstract: PD421000 NEC IC D 553 C
Contextual Info: NEC //P D 4 2 1 0 0 0 1 ,0 4 8 ,5 7 6 x 1 -B IT D YN A M IC CMOS RAM NEC Electronics Inc. Description The//PD421000 is a fast-page, 1,048,576-word by 1-bit dynam ic CMOS RAM designed to operate from a single + 5 -vo lt power supply. The device is fabricated with

PE4210

Contextual Info: Advance Information PE4210 SPDT Low Insertion Loss MOSFET RF Switch Features • Single 3.0 V Power Supply • Low Insertion loss: . 39dB at 1 GHz, .42dB at 2 GHz • High isolation of 32 dB at 1 GHz, 26 dB at 2 GH • Typical1 dB compression = +10dBm • CMOS logic control

Contextual Info: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 60% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz

PE4210

Abstract: PE4210-EK
Contextual Info: PRELIMINARY SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 Low Insertion Loss MOSFET RF Switch is designed to cover a broad range of uses in the 10 MHz through 2.5 GHz frequency range. This switch integrates on-board CMOS control logic and eliminates the need for

tgf2023-2-05

Contextual Info: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 62% Maximum PAE

nec 424256

Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
Contextual Info: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power

Contextual Info: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 64% Maximum PAE

PE4210-08MSOP-50A

Abstract: marking 8C PE4210 PE4210-08MSOP-2000C PE4210-EK
Contextual Info: PRODUCT SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL

Contextual Info: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven

PE4210

Abstract: PE4210-08MSOP-2000C PE4210-08MSOP-50A PE4210-EK
Contextual Info: PRODUCT SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL

tgf2023-2-20

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE

nec 424256

Abstract: 424256 memory 424256 424256 pin out 424256 nec
Contextual Info: M C- 42512 A 3 6 , - 424512 A 36 524,288 X 36 -Bit Dynam ic CM OS RAM Module 1L T M 7 /* * F U Æ2 d W N E C E le ctro n ics Inc. Pin Configuration Description The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits

PE4210G-08MSOP-50A

Abstract: PE4210 PE4210-08MSOP-2000C PE4210-08MSOP-50A PE4210-EK PE4210G-08MSOP-2000C
Contextual Info: Product Specification PE4210 SPDT UltraCMOS RF Switch DC - 3000 MHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from near DC to 3000 MHz. This single-supply switch integrates on-board CMOS control logic

424256 pin out

Abstract: TIO 872-M 424256 pd42256 nec 424256 DG342
Contextual Info: blE ]> • bM27525 D O a m 1!? DMT MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. N E C 0. 3 - ELECTRONICS INC Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic

Contextual Info: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 69% Maximum PAE 18 dB Nominal Power Gain at 3 GHz

424256 memory

Abstract: 424256
Contextual Info: SEC MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Prelim inary Information April 1992 Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single +5-volt power

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE D e s c r ip t io n Th e M C -4 2 1 0 0 0 A 3 2 B A , 4 2 1 0 0 0 A 3 2 F A are 1,048,576 w o rd s by 32 bits d yn a m ic R A M m o d u le on w h ich 2 p ie ce s

41256 dram

Contextual Info: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single + 5-volt power

UD42256

Abstract: 42256
Contextual Info: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single +5-volt power

Contextual Info: JUL »1 1902 NEC NEC Electronics Inc. MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module Preliminary Information June 1992 Description Pin Configuration The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits

424256

Abstract: nec 424256 upd42256 424256 memory JRC 062 062 JRC 42256 41256 dram NEC 421000 mC 421000
Contextual Info: SEC M C -42512A 36, -424512A 36 524,288 X 36-B it D ynam ic CM OS RAM Module NEC Electronics Inc. Prelim inary Information A p ril 1992 Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic RAM m o d u le s o rg a n iz e d as 5 2 4 ,2 8 8 w o rd s by 3 6 bits

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22