41A SOT23 Search Results

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 3 - OCTOBER 1995 FEATURES * Very Low Equivalent Résistance, RCE lat 195mQ at 1A CO M PLEM EN TA RY TYPE PARTMARKING D E T A IL - FM MT591A 41A ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: SOT23 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR IS S U E 3 -O C T O B E R 1995_ FEATURES * Very Low Equivalent Resistance, RCE|Jat 195m Q C O M P L E M E N T A R Y TY PE P A R T M A R K IN G D E T A IL - at 1A FM M T591A 41A ABSOLUTE MAXIMUM RATINGS.

MT591A

Contextual Info: SOT23 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR FMM T491A IS S U E 3 -O C T O B E R 1995 FEATURES * Very Low Equivalent Resistance, RCEisat 195mft at 1A C O M P L E M E N T A R Y TY PE - FM M T591A P A R T M A R K IN G D E T A IL - 41A ABSOLUTE M A X IM U M RATINGS.

FMMT491ATA

Abstract: fmmt491A 41A MARKING SOT23
Contextual Info: A Product Line of Diodes Incorporated FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current

100mA-1A

Abstract: FMMT591A npn 41A FMMT491A DSA003696 1A-10A
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A FMMT491A ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A TYPICAL CHARACTERISTICS 0.5 0.5 +25°C 0.4 -55° C +25° C +100° C 0.3 I+/I*=10 I+/I*=50 I+/I*=100

Contextual Info: Transistors IC SMD Type Medium Power Transistor FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

Contextual Info: Transistors IC SMD Type Product specification FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A E C COMPLEMENTARY TYPE – PARTMARKING DETAIL – I+/I*=10 -55° C +25° C +100° C I+/I*=10 I+/I*=50 I+/I*=100

Contextual Info: SLF431ASF Semiconductor Programmable Voltage Reference Features • Programmable output voltage to 36 volts • Sink current capability of 1.0mA to 100mA • Low dynamic impedance 0.15Ω typical • Temperature compensated for operation over full rated operating temperature

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and

UT4101

Abstract: is24
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT4101 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and

1RLML2402

Abstract: RLML2402 MARKING CODE PARI SOT23 MARKING tAN SOT-23 diode IRLML2402 rasistor 1RLML mosfet marking code AL sot-23 marking bad sot-23 076A
Contextual Info: 567- öt-b P D - 9.1257 International H I Rectifier IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching Voss = 20V R DS(on) =

44641B

Abstract: A43004
Contextual Info: Afacm m an A M P com pany Step Recovery Diodes MA43000, MA44600, MA44700 Series V 2.00 Features • Low Transition Times • Tight C apacitance Ranges • High Voltage and Low Therm al Resistance for H igher Input Pow er • Surface M ount Package Available SOT-23

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

Gfk 81a

Abstract: LT 543 common cathode Gfp 81a MMBZ15ALT1 MZ4623 SOT23 MOS MARKING KE gfk 47a mzp a 001 96 16 MMBZ20ALT1 1N5994B
Contextual Info: TVS/Zeners Transient Voltage Suppressors Zener Regulator and Reference Diodes In Brief . . . Motorola’s standard TVS Transient Voltage Suppressors and Zener diodes comprise the largest inventoried line in the industry. Continuous development of improved manufacturing

O2MICRO

Abstract: OZ811LN oz811 275V 0.1uF Capacitor oz811l IHLP5050FDER0R47M01 2N7002 BSC022N03S BSC119N03S MBR0540
Contextual Info: OZ811 Ultra High Efficiency DC-DC Controller FEATURES • • • • • • • • • • • • • • • • GENERAL DESCRIPTION DC-DC SMPS controller with integrated drivers Constant ripple-current control allows optimum inductor size High Efficiency up to 94%

Teledyne F-13

Abstract: NRF 211 teledyne U series
Contextual Info: TELEDYNE COMPONENTS 2ÖE D H öT17tiDS Q O Ü b4 G3 3 JÊÊ S D 1 1 0 0 , S D Ì 101 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION SDtlOOCHP — SD1100DD SD1100HD 450V, 35 ohm Sorted Chips In Conductive Waffle Pack

1N6095

Contextual Info: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

3148b

Contextual Info: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art

amd athlon 5600

Abstract: HIP6601 dip Circuit diagram of 12v 10w LED driver berg 68000-236 JOLO SPCJ-123-01 HIP6302 HIP6302CB ATX MOTHERBOARD schematic Socket 478 C13-C17 amd athlon PIN LAYOUT
Contextual Info: HIP6302EVAL1 - Multiphase Power Conversion for AMD Athlon Processors up to 35A TM Application Note February 2002 AN9888.1 Author: Matt Harris Introduction Each generation of computer microprocessor brings performance advances in computing power. Performance

12v dc full wave bridge rectifier

Abstract: 5000 watt full bridge design 1N5S34
Contextual Info: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

DIODE SD51

Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Contextual Info: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

1N5825

Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Contextual Info: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.