4164 DYNAMIC RAM Search Results

IC 4164

Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Contextual Info: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability

sense amplifier bitline memory device

Abstract: F4164 F4164-1 F4164-2 F4164-3
Contextual Info: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows

Contextual Info: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)

MK4164-15

Abstract: mostek MK4164 MK4116 MK4164 MK4096 MK4164-12 MK4516 MK4096 ram mostek system development board MK-4096
Contextual Info: MOSTEK 65,536 x 1 -BIT DYNAMIC RAM M K 4164 N /E -12/15 FEATURES n C o m m o n I / O c a p a b ility u s in g " e a r ly w r i t e " □ R e c o g n iz e d in d u s tr y s ta n d a r d 1 6 -p in c o n fig u r a tio n □ R ead, W r ite , fro m M o s te k

4164 ram

Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Contextual Info: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*

4164 ram

Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
Contextual Info: TEXAS INSTR -CASIC/flEMORY} 77 DE§ 0Tbl7SS 0040737 3 0 9 6 1 7 2 5 TEXAS INSTR <ASIC/MEMORY T7C 4 0 7 3 7 TM4164FL8, TM4164FM8 65.536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 TM 4164FL8 . TM 4164FM 8 6 5,5 36 X 8 Organization Single 5-V Supply 10% Tolerance)

4164-12

Abstract: NEC 4164 PD4164 4164-10 LPD416
Contextual Info: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both

Contextual Info: R F RF2451 MICRO-DEVICES 3V LOW NOISE AMPLIFIER Typ ical A p plicatio ns • GSM Handsets • IF or RF Buffer Amplifiers • CDMA Handsets • Driver Stage for Power Amplifiers • TDMA Handsets • Oscillator Loop Amplifiers The RF2451 is a general purpose, low-cost, high perfor­

DYNAMIC RAM 65536 TEXAS

Abstract: diode CLDI-12 TMS4164FPL 4164 dynamic ram
Contextual Info: TEXAS INSTR iASIC/MEflORYJ 77 D E j fl1fal7a5 0040bT0 3 77C 4 0 6 9 0 Ô96Ï725 TEXAS ÎNSTR CASIC/MEMORVT D TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 18B3 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 65,536 X 4 Organization Single 5-V Supply 10% Tolerance

tms4c1024

Abstract: TMS4C1024DJ
Contextual Info: fl1b].72S 007710G ^ • TM024HAC4 1,048,576 BY 4-BIT DYNAM IC RAM M ODULE — TEXAS INSTR • 1,048,576 x 4 Organization • Single 6-V Supply 10% Tolerance • 24-Pin Slngle-ln-llne Package (SIP) • Utilizes Four 1 Megabit Dynamic RAMs in Plastic Small-Outiine J-Lead (SOJ) Packages

4164 ram

Contextual Info: TM4164FL8, TM4164FM8 65,536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 6 5 ,5 3 6 X 8 Organization TM 4164FL8 . TM 4164FM 8 Single 5-V Supply 1 0 % Tolerance . L SINQ LE-IN-UN E P A C K A G E ' . . M SINGLE-IN-LINE P A C K A G E (TO P V IEW )

TMS4C1024DJ

Abstract: TMS4C1024 TM024EAD9 8192K
Contextual Info: TM024EAD9 1,048,576 BY 9-BIT DYNAMIC RAM MODULE TM024GAD8 1,048,576 BY 8-BIT DYNAMIC RAM MODULE 0=1^1725 0 G 7 7 1 G 4 T - ^-23-/7 b JULY 1967—REVISED MAY 1988 Modules TM024EAD9 . . . AD SMGLE-M-UNE PACKAGE TOP VIEW TM024EAD9 . . . 1,048,676 x 9 Organization

FZH115B

Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Contextual Info: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P

Contextual Info: ADVANCE INFORMATION TM4164EQ5 65,536 BY 5 BIT DYNAMIC RAM MODULE SEPTEM BER 1986 - REVISED NOVEMBER 1985 Q SINGLE-IN-LINE P A C K A G E 65,536 X 5 Organization TO P VIEW Single 5-V Supply (10% Tolerance) 24-Pin Single-in-Line Package (SIP) Utilizes Five 64K Dynamic RAMs in Plastic

4164 64k dram

Abstract: Z41H tms4164 S41128B
Contextual Info: TM S41128B 131,072-BIT DYNAMIC RANDOM-ACCESS MEMORY A PRIL 1985 —R EVISED NOVEM BER 1985 16-PIN PLASTIC DUAL-IN-LINE STACKED PACKAGES t 2 X 6 5 ,5 3 6 X 1 Organization TOP VIEW Single 5-V Supply (10% Tolerance) DC 1 U l 6 Uv s s wc 2 15 3 CA S RAS1C 3

Contextual Info: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 6 5 ,5 3 6 X 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Line Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic

TMS44C256

Abstract: sn74als6302 TMS4C1024
Contextual Info: TMS4C1024, TMS4C1025, TMS4C1027 1,048,576 BIT DYNAMIC RANDOM-ACCESS MEMORIES M A Y 1 9 8 6 —REVISED M A Y 1 9 8 8 1,048.576 x 1 Organization Dynamic RAMs N PACKAGE TOP VIEW Single 5-V Supply (10% Tolerance) DC 1 U l 8 H v ss 1 7 HQ w c 2 16 ] C A S RAS C 3

TMS4500

Abstract: TMS4500A
Contextual Info: TM S4500A DYNAMIC RAM CONTROLLER D 2 6 7 4 , JA N U A R Y 1 9 8 2 TMS4500A . . . N PACKAGE Controls Operation of 8K, 16K. 3 2 K , and 6 4 K Dynam ic RAMs TOP VIEW One Package Contains Address M ultiplexer, Refresh Control, and Timing Control Operates from Microprocessor Clock

M5K4164ANP

Abstract: 2164 dynamic ram mcm6665 block stsu Intel 2164 DYNAMIC RAM 65536 M5K4164ANP-20 6665 RAM msk4164 RASH
Contextual Info: M IT S U B IS H I LS Is M5K4164ANP-20 6 5 53 6 -B IT 65536-W O RD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN C O N F IG U R A T IO N (TOP V IEW ) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b rica te d w ith the high p e rform ance N-channel silicongate

MK4116-3

Abstract: 4116 dynamic ram RAM 4116 MK4116 4116 ram wc1f MK4164
Contextual Info: M05TEK 32,768 X1-BIT DYNAMIC RAM MK4332 D -3 FEATURES □ Utilizes tw o industry standard MK 4116 devices in an 18-pin package configuration □ Common I/O capability using "early w rite " operation □ □ □ 200ns access t ime, 3 75ns cycle (MK 4116-3)

4164A

Abstract: 3A5 tube
Contextual Info: r TEXA S INSTR { A S I C / M E M O R Y } 17- D Ë J flTbl7ES 0 D 7 4 Ö 3 S A T - V 6 - Z 3 ~IS SMJ4C1027 1,048,576-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1 9 8 8 1,048,576 x 1 Organization JD PACKAGE TOP VIEW Single 5-V Supply (1 0 % Tolerance) DC Performance Ranges:

k2000c

Abstract: 048576-BIT 4164 64k dram
Contextual Info: a à fi172S TEXAS IN ST R < A SIC /M E M O R Y TEXAS INSTR -CASIC/f1EH0RY> . 970 74833 D T - * / 6 ~2 3 ~ 5 D E | 0 ^ 1 7 5 5 0D74fl33 4 | S M J 4 C 1 0 2 4 1,048.576-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1 9 8 8 1,048,576 x 1 Organization JD PACKAGE

Contextual Info: TEXAS INSTR -CASIC/MEMORY} Ì7 Ô Ë | flìtlTES D074Ô31 □ 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1988 262,144 x 4 Organization JD PACKAGE TOP VIEW Performance Ranges: AC C ESS AC C ESS AC C ESS TIM E TIM E TIM E • e 4 5 ns *a(CA)

tms4164

Abstract: 4164-20 TMS4164 65,536 irf 536
Contextual Info: TMS4164 65,536 BIT DYNAMIC RANDOM-ACCESS MEMORY MAV 1985 —REVISED NOVEMBER 1985 This D a ta S hee t Is A p p lic a b le to A ll T M S 4 1 6 4 s S ym b o lize d w ith Code " A " as D e scrib e d on Page 4 -5 7. 6 5 .5 3 6 X 1 Organization • Single 5-V Supply 10% Tolerance