410MA Search Results

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T150K Features Item Summary 15 H(±10%), 400mA, 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS6012T680MMGJV Features Item Summary 68 H(±20%), 440mA, 410mA Lifecycle Stage Mass Production

C37 diode

Abstract: ESJC37-08 C37 high voltage diode HIGH VOLTAGE DIODE 10kv 10KV ESJC37 ESJC37-05 ESJC37-10
Contextual Info: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTAGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.

C37 diode

Abstract: C37 high voltage diode HIGH VOLTAGE DIODE 10kv transistor c37 high voltage diode 100 kv 8kv DIODE ESJC37
Contextual Info: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark

PI6C410MAAEX

Abstract: 240mil DOT96 PI6C410M PI6C410MA PI6C410MAAE PI6C410MAE
Contextual Info: PI6C410M/410MA Clock Generator for Intel PCI Express Mobile Chipset Features Description • 14.318 MHz Crystal Input PI6C410M is a high-speed, low-noise clock generator designed to work with the Intel Mobile PCI Express Chipset. This Spread Spectrum PLL based clock generator reduces EMI emission and

F1400

Abstract: 0315PB 2t -3-6-5 smd TS615
Contextual Info: TS615 DUAL WIDE BAND OPERATIONAL AMPLIFIER • LOW NOISE : 2.5nV/√Hz ■ HIGH OUTPUT CURRENT : 410mA ■ VERY LOW HARMONIC AND INTERMODULATION DISTORTION ■ HIGH SLEW RATE : 410V/µs ■ -3dB BANDWIDTH : 40MHz@gain=12dB on 25Ω load single ended. ■ 21.2Vp-p DIFFERENTIAL OUTPUT SWING

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LBM2016TR56J Features Item Summary 0.56 H(±5%), 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2016T3R3M Features Item Summary 3.3 H(±20%), 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC3225T680MR Features Item Summary 68 H(±20%), 320mA, 410mA, 1210 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 60V 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V • • • • • • • ID TA = 25°C 440mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMN2004K

Abstract: DMN2004K-7
Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN2004K Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA • Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V  Low Gate Threshold Voltage

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T150K Features Item Summary 15 H(±10%), 400mA, 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T150K Features Item Summary 15 H(±10%), 400mA, 410mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

20 TQFN-EP

Contextual Info: 19-3843; Rev 3; 7/12 Space-Saving, 8-Channel Relay/Load Driver Features ♦ Supports Up to 50V Continuous Drain-to-Source Voltage ♦ Guaranteed Drive Current: ♦ VS ≥ 4.5V 200mA All Channels On 410mA (Individual Channels) ♦ VS ≤ 3.6V 100mA ♦ Built-In Output Clamp Protects Against Inductive

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: — .810 MAX — - r * f .410MAX i s. I I .125 . I 1.330 MAX ,100 T Y P BLUE 8 E A D .LJ. .120 .100 TT" r är .250 f t .410MAX rr - L TERMINAL 1.062 D E T A IL 1.078 REV. .020 DIA. 3 T .040 DCO 63333 COIL: g 25°C CUSTOMER DATA SH EET B90 OHMS ±10%

Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S1N6C-T Features Item Summary 1.6nH(-0.2nH to +0.2nH), 410mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series H type NRH3010T220MN Features Item Summary 22 H(±20%), 380mA, 410mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T2R2M Features Item Summary 2.2 H(±20%), 410mA, 770mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2518T470K Features Item Summary 47 H(±10%), 410mA, 300mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRH3010T220MNV Features Item Summary 22 H(±20%), 380mA, 410mA Lifecycle Stage Mass Production

Contextual Info: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching