410 802 Search Results

071 0039

Abstract: ngb15n41 NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

NGB15N41CLT4

Abstract: NGD15N41CL NGD15N41CLT4 NGP15N41CL
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41CLG

Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC
Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41G

Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41cLG

Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41CL NGB15N41CL NGD15N41CLT4 NGP15N41CL NGB15N41CLT4
Contextual Info: NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

NGP15N41CL

Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

NGD15N41CL-D

Abstract: NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

802-012-00 and 802-030-00 Dimensions

Abstract: Series 802
Contextual Info: Series 802 Series 802 AquaMouse Submersible Solder Cup or PCB Receptacle 802-012-00 and 802-030-00 Dimensions Front panel mount jam nut receptacle - shell style 00 .965 24.51 .410/.400 (10.41/10.16) MASTER KEYWAY .125 (3.18) MIN O-RING ØE øA MAX F FLAT

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 8, 02/2012 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

JIS D 5403

Abstract: TMCX118100 sj 2038 appleton clamp 7665s scotchcast 92 7665-S-8 8462 "cross reference" TMCX8875 TMCX402400
Contextual Info: Splice Rejacketing 387 Splice Repair 390 3 M Safety Sock Grounding Kits, Shielded and Jacketed URD Cable 391 Sealing and Grounding 393 3/C Cable Breakout Boots and 3/C Phase Rejacketing System 395 Insulating and Sealing Compounds 408 Mounting Brackets 410

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 8, 02/2012 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

MGB15N40CL

Abstract: MGB15N40CLT4 MGP15N40CL G15N40
Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

G15N40

Abstract: MGB15N40CL MGB15N40CLT4 MGP15N40CL 440VDC
Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

K1413

Abstract: MCF54452 ssi 202 MCF54450 MCF54450VM180 MCF54450VM240 MCF54451CVM180 MCF54454 MCF54455 E1513
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 1, 02/2008 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire® Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

MCF54455CVR200

Abstract: MCF54455RM
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 0, 09/2007 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire® Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

AD1611

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 4, 4/2009 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire® Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

DR 6236

Abstract: arion ar 310
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest North East 20 Mall Road Suite 410 Burlington, MA 01803 617 273-4888 FAX: (617) 273-9363 901 Warrenville Road Suite 120 Lisie, IL 60532-1359 (708) 852-2011 FAX: (708) 852-3096 3655 North First Street

K1413

Abstract: MCF54454 MCF54451CVM180 MCF54452 MCF54455 MCF54450 MCF54450CVM180 MCF54450VM240 K611 J914
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 6, 10/2009 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire® Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

K1413

Abstract: MCF54450 MCF54450VM180 MCF54450VM240 MCF54451CVM180 MCF54452 MCF54454 MCF54455 HBM W10 k914
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 2, 05/2008 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire® Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

MCF5445X

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 3, 12/2008 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire® Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MCF54455 Rev. 7, 11/2011 MCF54455 MAPBGA–256 17mm x 17mm MCF5445x ColdFire Microprocessor Data Sheet Features • Version 4 ColdFire® Core with MMU and EMAC • Up to 410 Dhrystone 2.1 MIPS @ 266 MHz

G15N40CL

Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

G15N40CL

Abstract: G15N40C G15N40 IGBT 50 amp 1000 volt igbt ignition MGB15N40CL MGB15N40CLT4 MGP15N40CL ignition IGBT
Contextual Info: MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

SAMSUNG 834

Abstract: shing wai k27419 NA76 st 8843 D8024 ITT 813
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 Mall Road Suite 410 Burlington, MA 01803 Tel: 617 273-4888 Fax: (617) 273-9363 300 Park Boulevard Suite 210 Itasca. IL 60143-2636 Tel: (708)775-1050 Fax: (708) 775-1058 3655 North First Street