40V ZENER DIODE Search Results

HITACHI HZ-P

Abstract: HZ2.0 BP 34 hz24 HZ22 ADE-208-123B Hitachi Zener diodes
Contextual Info: HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-123B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.

smd 39a diode zener

Abstract: TH 2190 mosfet 39A zener diode th 2190 TH 2190 mosfet isolated smd diode 39a P Channel Power MOSFET IRF TH 2190 Transistor AN-994 IRLBD59N04E
Contextual Info: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®

Hitachi Zener diodes

Abstract: HZ56 HZ30 zener 245
Contextual Info: HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-123B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.

TH 2190 mosfet

Abstract: smd 39a diode zener TH 2190 mosfet isolated AN-994 IRLBD59N04E SMD-220 G10 zener diode 39A zener diode
Contextual Info: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®

F 82 bp

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter Features Outline • Wide spectrum from 1.88 V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

hz10bp

Abstract: HZ5.1BP Hitachi DSA00106 Hitachi Semiconductor zener diodes
Contextual Info: HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-123D Z Rev.4 Sep. 2000 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.

Hitachi DSA002721

Abstract: Hitachi Semiconductor zener diodes
Contextual Info: HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-123D Z Rev.4 Sep. 2000 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.

Contextual Info: HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-123C Z Rev 3 Jan. 1999 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.

zener 245

Abstract: HZ10 HZ11 HZ12 HZ13 HZ15 HZ16 HZ18 HZ20 HZ22
Contextual Info: HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-123B Z Rev 2 November 1996 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. Glass package DO-41 structure ensures high reliability.

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

HZF10

Abstract: HZF6.8 ADE-208-129B
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

HZF22BP

Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

HZF10

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208- 129B Z Rev 2 Features • W ide spectrum from • 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

LRP PACKAGE

Abstract: CP4020 HZF Series
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

HZF16BP

Abstract: code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

BP 34 datasheet

Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Jul. 1997 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

Shindengen catalog

Abstract: shindengen zener
Contextual Info: 大容量面実装デバイス 単体 Power zener Diode •外形図 OUTLINE ST60-48MF ST60-48MF MCP Package Power Surface Mount Device Single Zener Diode ■特性図 CHARACTERISTIC DIAGRAMS Package : MCP Unit:mm Weight 1.5g 40V 6000W TI=25℃ 10/1000 s

Zener diode smd marking T1

Abstract: 5W zener diode SMD diode marking 432 power zener diode 40V zener diode zener diode catalog
Contextual Info: 大容量面実装デバイス 単体 Power zener Diode •外形図 OUTLINE ST60-48MF ST60-48MF MCP Package Power Surface Mount Device Single Zener Diode ■特性図 CHARACTERISTIC DIAGRAMS Package : MCP Unit:mm Weight 1.5g 40V 6000W TI=25℃ 10/1000 s

AN-994

Abstract: IRLBD59N04E SMD-220 G10 zener diode smd zener diode KH v smd diode 59A
Contextual Info: PD -93910 IRLBD59N04E HEXFET Power MOSFET l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A† Description

Contextual Info: WILLAS ZMM5221B thru ZMM5267B 500mW Mini MELF Zener Diodes MINI-MELF/LL-34 Unit : inch mm Features SCS501V Plannar Die constuction 500mW Power Dissipation VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers VZ–tolerance ± 5% Weight 0.03g .063(1.6) Ideally Suited for Automated Assembly Processes

smd 39a diode zener

Abstract: 39A zener diode AN-994 IRLBD59N04E SMD-220
Contextual Info: PD -93910A IRLBD59N04E HEXFET Power MOSFET l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A† Description

K3801

Abstract: 2SK3801
Contextual Info: 2SK3801 N-channel MOSFET Features and Benefits •      Equivalent Circuit Package RDSON: 6mΩ max. @25℃ VDSS: 40V Built-in Protection zener Di between G-S. Avalanche energy capability guaranteed Trench MOSFET structure. High Reliability

15005B

Abstract: zener gdz marking
Contextual Info: WILLAS SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier DATA SHEET GDZ2.0~GDZ56 Pb Free Product FEATURES SOD-323 SC-76 AXIAL LEAD ZENER DIODES * Extremely Low VF500 POWER .012 Unit: inch (mm) DO-35 mWatts 1. 0 2( 26 . 0) MIN. • Ideally Suited for Automated Assembly Processes

Contextual Info: 2SK3800 N-channel MOSFET Features and Benefits •      Equivalent Circuit Package RDSON: 6mΩ max. @25℃ VDSS: 40V Built-in Protection zener Di between G-S. Avalanche energy capability guaranteed Trench MOSFET structure. High Reliability