40V COMPLEMENTARY MOSFET Search Results

DUAL NPN SOT23-6

Abstract: NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors
Contextual Info: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information

ZXTC2045E6TC

Contextual Info: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information

ZXMC4A16DN8

Abstract: ZXMC4A16DN8TA ZXMC4A16DN8TC
Contextual Info: ZXMC4A16DN8 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits

TS16949

Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
Contextual Info: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN

AO4618

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: Advanced Power Electronics Corp. AP4525GEH-A-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 26mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 8.3A -40V 40mΩ

Contextual Info: Advanced Power Electronics Corp. AP4563AGH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 20mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 9.6A -40V 36mΩ

Contextual Info: Advanced Power Electronics Corp. AP4543GEH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 24mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 8.7A -40V 40mΩ

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: Complementary MOSFET ELM544599A-N •General Description ■Features ELM544599A-N uses advanced trench technology to provide excellent Rds on and low gate charge. • N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)

Contextual Info: Advanced Power Electronics Corp. AP4563GH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 30mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 30A -40V 36mΩ

4525GEH

Abstract: AP4525GEH-HF-3TR 4525GE
Contextual Info: Advanced Power Electronics Corp. AP4525GEH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 28mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 15A -40V 42mΩ

Contextual Info: DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT Device RDS on max V(BR)DSS Q2 40V Q1 -40V Features and Benefits 24m @ VGS = 10V 32m @ VGS = 4.5V 45m @ VGS = -10V 55m @ VGS = -4.5V ID TA = +25°C

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

marking 1d2

Abstract: ZETEX GATE DRIVER ZXTN07045EFF ZXTP07040DFF ZXTP07040DFFTA
Contextual Info: ZXTP07040DFF 40V, SOT23F, PNP medium power transistor Summary; BVCEO > -40V BVECO > -3V IC cont = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m⍀ PD = 1.5W Complementary part number ZXTN07045EFF Description C This low voltage PNP transistor has been designed for applications

marking 1d2

Contextual Info: ZXTP07040DFF 40V, SOT23F, PNP medium power transistor Summary; BVCEO > -40V BVECO > -3V IC cont = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m⍀ PD = 1.5W Complementary part number ZXTN07045EFF Description C This low voltage PNP transistor has been designed for applications

ZXTP25040DZTA

Abstract: TS16949 ZXTN25040DZ ZXTP25040DZ marking 1l6
Contextual Info: ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC cont = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description C Advanced process capability and package design have been used to

ZXTN25040DFH

Abstract: ZXTP25040DFH ZXTP25040DFHTA
Contextual Info: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC cont = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description C Advanced process capability and package design have been used to

ZXTP25040DFLTA

Contextual Info: ZXTP25040DFL 40V, SOT23, PNP low power transistor Summary BVCEO > -40V BVECO > -3V IC cont = -1.5A VCE(sat) < -110mV @ 1A RCE(sat) = 80m⍀ PD = 350mW Complementary part number ZXTN25040DFL Description C Advanced process capability has been used to achieve high current gain

ZETEX medium power complementary transistors

Abstract: 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA
Contextual Info: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to

ZXTN25040DFH

Abstract: ZXTP25040DFH ZXTP25040DFHTA Marking 024
Contextual Info: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to

ZXTP25040DFHTA

Contextual Info: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to