NCE40P20Q1 is a channel enhancement mode power MOSFET with -40V drain-source voltage, -20A continuous drain current, and low on-state resistance of 14mΩ typical at VGS=-10V, housed in a DFN3.3x3.3-8L surface mount package.
NCE40P20Q is a -40V, -20A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 18mΩ at VGS=-10V, suitable for power management and load switch applications in a DFN3.3x3.3-8L surface mount package.
NCE40P25G is a -40V, -25A P-channel MOSFET with 11.5mΩ typical RDS(ON) at VGS = -10V, using advanced trench technology for low on-resistance and high-density cell design, suitable for DC/DC converters and high-frequency switching applications.
NCE40P20Q1
