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    40N65 Search Results

    40N65 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TK040N65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 57 A, 0.04 Ohm@10V, TO-247 Datasheet
    SF Impression Pixel

    40N65 Price and Stock

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    FLIP ELECTRONICS NTHLD040N65S3HF

    MOSFET N-CH 650V 65A TO247
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    DigiKey NTHLD040N65S3HF Tube 16,258 120
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    Micro Commercial Components MIW40N65RA-BP

    IGBT TRENCH FS 650V 80A TO-247AB
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    DigiKey MIW40N65RA-BP Tube 1,770 1
    • 1 $6.76
    • 10 $4.52
    • 100 $3.26
    • 1000 $2.72
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    FLIP ELECTRONICS FCHD040N65S3-F155

    MOSFET N-CH 650V 65A TO247
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    DigiKey FCHD040N65S3-F155 Tube 1,200 120
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    IXYS Corporation IXSA40N65L2-7TR

    650V 60M (40A @ 25C) SIC MOSFET
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    DigiKey () IXSA40N65L2-7TR Cut Tape 880 1
    • 1 $8.92
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    • 100 $4.47
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    IXSA40N65L2-7TR Digi-Reel 880 1
    • 1 $8.92
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    IXSA40N65L2-7TR Tape & Reel 800 800
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    Infineon Technologies AG AIKB40N65DF5ATMA1

    IGBT NPT 650V 40A TO263-3-2
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    DigiKey () AIKB40N65DF5ATMA1 Digi-Reel 850 1
    • 1 $5.56
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    AIKB40N65DF5ATMA1 Cut Tape 850 1
    • 1 $5.56
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    • 1000 $2.14
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    Avnet Americas AIKB40N65DF5ATMA1 Tape & Reel 39 Weeks 1,000
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    Rochester Electronics AIKB40N65DF5ATMA1 1,922 1
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    EBV Elektronik AIKB40N65DF5ATMA1 40 Weeks 1,000
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    Find more 40N65 price and stock on Findchips.com

    40N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40N25

    Abstract: 100N45 60N652 0101T photron
    Contextual Info: CHIP SIZE mil wafer form chip form IR@VR (mA@V) 7,081 40x40 38.8+/-0.5 ≦0.2@23 ≦0.44@1 S40CT1 40N451 7,081 40x40 38.8+/-0.5 ≦0.2@43 ≦0.50@1 S40CT1 40N651 7,081 40x40 38.8+/-0.5 ≦0.2@63 ≦0.65@1 S40CT1 50N251 4,450 50x50 48.8+-/0.5 ≦0.2@23 ≦0.42@1


    Original     		40N251 40N451 40N651 50N251 50N451 60N252 60N452 60N652 66N253 66N453 40N25 100N45 0101T photron PDF

    Contextual Info: 40N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTB40N65FL2WG NGTB40N65FL2W/D PDF

    Contextual Info: 40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N65IHL2WG NGTB40N65IHL2W/D PDF