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    40N65 Search Results

    40N65 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TK040N65Z
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 57 A, 0.04 Ohm@10V, TO-247 Datasheet

    40N65 Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CGWT40N65F2KAD
    JCET Group 650V, 40A IGBT with low Vce(sat), high-speed switching, and integrated fast soft-recovery diode in TO-247 package, suitable for UPS, solar inverters, EV chargers, and power storage applications. Original PDF
    badge HCKW40N65H2
    VANGUARD 650V 40A IGBT with low VCE(sat) of 1.45V, high-speed soft switching, integrated fast recovery diode, and positive temperature coefficient, suitable for high-frequency applications in power, PV, welding, and PFC systems. Original PDF
    badge CXG40N65HSEK
    CREATEK Microelectronics 650V 40A IGBT in TO-247 package with field stop technology, featuring low VCE(sat) of 1.7V at 40A, positive temperature coefficient, square RBSOA, and integrated gate resistor, suitable for motor drives, UPS, and inverter applications. Original PDF
    badge CXG40N65HSZU
    CREATEK Microelectronics 650V 40A IGBT in TO-247 package with Field Stop technology, featuring VCE(sat) of 2.2V at 40A, 10μs short circuit capability, positive temperature coefficient, and integrated gate resistor. Original PDF
    badge CXG40N65HS
    CREATEK Microelectronics 650V 40A IGBT in TO-247 package with Field Stop technology, featuring low VCE(sat) of 1.7V at 40A, positive temperature coefficient, square RBSOA, and integrated gate resistor for motor drives, UPS, and inverter applications. Original PDF
    badge CXG40N65HSEU
    CREATEK Microelectronics 650V 40A IGBT in TO-247 package with 2.3V typical VCE(sat) at 40A, featuring field stop technology, 10μs short circuit capability, positive temperature coefficient, and low switching losses for motor drives, UPS, and inverter applications. Original PDF
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    40N65 Price and Stock

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    Vishay Intertechnologies SIHD240N65E-GE3

    E SERIES POWER MOSFET 650 V (D-
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    DigiKey SIHD240N65E-GE3 Tube 3,000 1
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    Avnet Americas SIHD240N65E-GE3 Tape & Reel 18 Weeks 3,000
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    Infineon Technologies AG AIKB40N65DH5ATMA1

    IGBT NPT 650V 40A TO263-3-2
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    DigiKey () AIKB40N65DH5ATMA1 Cut Tape 2,943 1
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    AIKB40N65DH5ATMA1 Digi-Reel 2,943 1
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    AIKB40N65DH5ATMA1 Tape & Reel 1,000 1,000
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    Avnet Americas AIKB40N65DH5ATMA1 Tape & Reel 10 Weeks 1,000
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    Rochester Electronics AIKB40N65DH5ATMA1 981 1
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    EBV Elektronik AIKB40N65DH5ATMA1 11 Weeks 1,000
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    Infineon Technologies AG IGP40N65H5XKSA1

    IGBT 650V 74A TO220-3
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    DigiKey IGP40N65H5XKSA1 Tube 500 1
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    Avnet Americas IGP40N65H5XKSA1 Tube 19 Weeks 500
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    Newark IGP40N65H5XKSA1 Bulk 519 1
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    Rochester Electronics IGP40N65H5XKSA1 71 1
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    EBV Elektronik IGP40N65H5XKSA1 20 Weeks 500
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    Micro Commercial Components MIW40N65AT2Y-BP

    IGBT DISCRETE,TO-247AB
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    DigiKey MIW40N65AT2Y-BP Tube 360 1
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    IXYS Corporation IXXH40N65B4

    IGBT PT 650V 120A TO-247AD
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    DigiKey IXXH40N65B4 Tube 300 1
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    TTI IXXH40N65B4 Tube 300
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    Bristol Electronics IXXH40N65B4 58 2
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    40N65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40N25

    Abstract: 100N45 60N652 0101T photron
    Contextual Info: CHIP SIZE mil wafer form chip form IR@VR (mA@V) 7,081 40x40 38.8+/-0.5 ≦0.2@23 ≦0.44@1 S40CT1 40N451 7,081 40x40 38.8+/-0.5 ≦0.2@43 ≦0.50@1 S40CT1 40N651 7,081 40x40 38.8+/-0.5 ≦0.2@63 ≦0.65@1 S40CT1 50N251 4,450 50x50 48.8+-/0.5 ≦0.2@23 ≦0.42@1


    Original
    40N251 40N451 40N651 50N251 50N451 60N252 60N452 60N652 66N253 66N453 40N25 100N45 0101T photron PDF

    Contextual Info: 40N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N65FL2WG NGTB40N65FL2W/D PDF

    Contextual Info: 40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N65IHL2WG NGTB40N65IHL2W/D PDF