40J322 Search Results

GT40J322

Abstract: ic MARKING QG 40J322
Contextual Info: 40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J322 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.20 s typ. (IC = 40 A)

Contextual Info: 40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J322 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.20 s typ. (IC = 40 A)

GT40J322

Abstract: IGBT 101 40J322 10MSA
Contextual Info: 40J322 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT 40J322 ○ 第 4 世代 単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf = 0.20 s 標準 (IC = 40 A)

Contextual Info: 40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J322 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.20 s typ. (IC = 40 A)