40J321 Search Results

GT40J321

Abstract: TC4015
Contextual Info: 40J321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT 40J321 ○ 第 4 世代 単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf = 0.11 s 標準 (IC = 40 A)

Contextual Info: 40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J321 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.11 s typ. (IC = 40 A)

GT40J321

Contextual Info: 40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J321 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.11 s typ. (IC = 40 A)

Contextual Info: 40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J321 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.11 s typ. (IC = 40 A)