4066 BD Search Results

NTC 200-9

Abstract: G9864ST22F0 "advanced thermal products" NTC 837
Contextual Info: 2 1 ATP CURVE TEMP COEF @ 25°C: 12 ± .5 1.5 .25 `.0625 -4.5%/°C RES./RATIO: 0/50°C 9.47 BETA: 25/85°C 4066 ±50 TEMPER ATURE °C Rt/R25 10 20 25 30 40 50 60 70 80 85 90 100 110 120 125 130 140 150 175 200 225 250 275 300 329,285 198,837 123,713 98,600

Contextual Info: COS/MOS INTEGRATED CIRCUIT 4066 B> Q U A D B I L A T E R A L S W IT C H F O R T R A N S M I S S I O N O F A N A L O G O R D IG IT A L S IG N A L S hcc/hcf 4066B OR M U L T IP L E X IN G • • • • • • 15V D IG IT A L OR ±7 .5V P E A K -T O -P E A K SW ITCHING

Contextual Info: LTC4066/LTC4066-1 USB Power Controller and Li-Ion Linear Charger with Low Loss Ideal Diode DESCRIPTION FEATURES n n n n n n n n n n n n n Seamless Transition Between Input Power Sources: Li-Ion Battery, USB and 5V Wall Adapter Low Loss 50mΩ Ideal Diode Path from BAT to OUT

4066BE

Abstract: 4066 applications CMOS 4066 HCF 40668 4066 BE 4066B "4066 be" data 4066 BM cnc schematic mos 4066
Contextual Info: C O S/M O S IN T EG R A T ED CIRCUIT „ 4 D é é M> h c c /h c f 4066b Q U A D B IL A T E R A L SW ITCH FOR T R A N S M IS S IO N OR M U L T IP L E X IN G OF A N A L O G OR D IG IT A L S IG N A L S • • • • • • 15V D IG IT A L OR ± 7 ,5V P E A K -T O -P E A K SW ITCHING

4066T

Abstract: pin diagram of ic 4066 4066 IC circuit diagram LTC4066-1 48V 20A battery charger Pin Diagram of ic 4086 datasheet LTC4066 4066BD MA15004 105k 450v capacitor
Contextual Info: LTC4066/LTC4066-1 USB Power Controller and Li-Ion Linear Charger with Low Loss Ideal Diode DESCRIPTION FEATURES n n n n n n n n n n n n n Seamless Transition Between Input Power Sources: Li-Ion Battery, USB and 5V Wall Adapter Low Loss 50mΩ Ideal Diode Path from BAT to OUT

Power Transistors TO-126 Case

Abstract: BD438 7333 A 9016 g farnell
Contextual Info: BD438 Medium Power Transistors General Purpose TO-126 Features: • PNP Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C

Power Transistors TO-126 Case

Abstract: farnell ic 9400 BD680
Contextual Info: BD680 PNP Power Darlington Transistors TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical) N 3.75 (Typical) P S 3.0 3.2 2.5 (Typical) Dimensions : Millimetres

7333 A

Abstract: Power Transistors TO-126 Case farnell ic 901 BD437
Contextual Info: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C

BD681

Abstract: NPN POWER DARLINGTON power darlington NPN POWER DARLINGTON TRANSISTORS
Contextual Info: BD681 NPN Power Darlington Transistors Feature: • NPN Plastic Power Darlington Transistors. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical)

power transistor bd135

Abstract: bd135 to-126 bd135 n BD135
Contextual Info: BD135 TO-126 NPN Transistors Features: • NPN Plastic Power Transistors. • Medium Power Linear and Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical)

BDW94B

Abstract: BDW93C PNP BDW93B BDW93 BDW93C BDW94 BDW94C bdw93c applications DARLINGTON 30A 100V npn Complementary Darlington current Amplifier
Contextual Info: BDW93, BDW94 Series Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-emitter sustaining voltage-VCEO sus = 80V (Minimum) - BDW93B, BDW94B 100V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2.0V (Maximum) at IC = 5.0A.

bd237 equivalent

Abstract: BD237
Contextual Info: BD237 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical

BD238

Contextual Info: BD238 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical

transistor 9016 npn

Abstract: farnell IC 358 BD179
Contextual Info: BD179 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical

pin configuration NPN transistor BD679

Abstract: bd679 "Darlington Transistors" NPN POWER DARLINGTON 7333 A ic 9400 Power Transistors TO-126 Case d 44 npn bd679 NPN NPN POWER DARLINGTON TRANSISTORS
Contextual Info: BD679 NPN Power Darlington Transistors Feature: • NPN Plastic Power Darlington Transistors. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical)

"Darlington Transistors"

Abstract: transistor BD677 BD677 7333 A Darlington transistor ic 9400
Contextual Info: BD677 NPN Power Darlington Transistors Feature: • NPN Plastic Power Darlington Transistors. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical)

TBD438

Abstract: BD433 TBD436 TBD437 434 NPN transistors
Contextual Info: BD433, 434, 435, 436, 437, 438 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum

Power Bipolar Transistor

Abstract: BD244C transistor transistor BD244C BD244C
Contextual Info: BD244C High Power Bipolar Transistor TO-220, General Purpose Features: • PNP plastic power transistors. • General purpose amplifier and switching applications. TO-220 Plastic Package Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D -

pin configuration transistor BD139

Abstract: BD139 N power transistor bd139 BD139 PIN DATA BD139 bd139 equivalent BD139 transistor bd139 application note transistor bd139 TO-126
Contextual Info: BD139 TO-126 NPN Transistors Features: • NPN Plastic Power Transistors. • Medium Power Linear and Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical)

BD136

Abstract: pnp transistor to126 power transistor bd136
Contextual Info: BD136 TO-126 PNP Transistors Features: • PNP Plastic Power Transistors. • Medium Power Linear and Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical)

BD140 application circuits circuits

Abstract: bd140 equivalent transistor BD140 bd140 data sheet pin configuration transistor bd140 BD140 circuits data sheet of bd140 transistor BD140 BD140 N 7333 A
Contextual Info: BD140 TO-126 PNP Transistors Features: • PNP Plastic Power Transistors. • Medium Power Linear and Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical)

farnell

Abstract: BD243C
Contextual Info: BD243C High Power Bipolar Transistor TO-220, General Purpose Features: • NPN plastic power transistors. • General purpose amplifier and switching applications. TO-220 Plastic Package Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D -

BDW94

Abstract: BDW93C BDW93 BDW93B BDW94B BDW94C BDW93C PNP
Contextual Info: BDW93, BDW94 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 80V (Minimum) - BDW93B, BDW94B = 100V (Minimum) - BDW93C, BDW94C • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 5.0A • Monolithic construction with Built-in Base-Emitter shunt resistor.

BDX33

Abstract: BDX33B BDX33C BDX34B BDX34C resistor farnell DARLINGTON 30A 100V npn
Contextual Info: BDX33, 34 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector