405NM 10MW Search Results
405NM 10MW Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DLP5534PROJQ1EVM |
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DLP5534-Q1 405nm projector evaluation module |
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DLP5534Q1EVM |
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Electronics-only EVM featuring DLP5534-Q1 0.55 405nm DMD |
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TIBPAL16R8-10MWB |
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High-Performance Impact-X PAL Circuits 20-CFP -55 to 125 |
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TPS62810MWRWYR |
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2.75-V to 6-V, 4-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 |
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DLP5534AFYKQ1 |
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DLP® automotive 0.55-inch 405nm digital micromirror device (DMD) 149-CPGA -40 to 105 |
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405NM 10MW Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CS4050205M 406nm Compact Laser Diode Key features Visible light λ= 405nm Output powers =20mW Package type=5.6mmΦ High reliability Applications Blu-ray Disc/HD DVD drive Other new application Laser Diode Solutions CS4051205X is a MOCVD grown 405nm band InGaAs laser diode.It's an |
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CS4050205M 406nm 405nm CS4051205X 405nm divers-vis/lcs/cs4050205m | |
CS4050205M
Abstract: 405nm 5mW laser diode 405nm 20mW TS 5225 405nm laser diode 405nm Laser 5 mw
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CS4050205M 406nm 405nm CS4050205M divers-vis/lcs/cs4050205m 405nm 5mW laser diode 405nm 20mW TS 5225 405nm laser diode 405nm Laser 5 mw | |
DL-4146-101S
Abstract: 405nm 10mw DL-4146-101 405nm diode
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DL-4146-101S 405nm DL-4146-101S 405nm 10mw DL-4146-101 405nm diode | |
DL-4146-101
Abstract: DL-4146-101S 405nm laser diode 405nm 2 Wavelength Laser Diode sanyo
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DL-4146-101S 405nm DL-4146-101 DL-4146-101S laser diode 405nm 2 Wavelength Laser Diode sanyo | |
laser diode 405nm
Abstract: 445nm laser diode 445nm 405nm 10mw furukawa 405nm 4835 7313 biomedical d-sub15
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405nm/445nm] HPU50213 RS-232C 1-866-GO-FITEL HPU502-V REV01 P08CA710-058 laser diode 405nm 445nm laser diode 445nm 405nm 10mw furukawa 405nm 4835 7313 biomedical d-sub15 | |
650nm laser diode 200mw
Abstract: DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo
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405nm 830nm 635nm 808nm 650nm laser diode 200mw DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo | |
DL-4146-101S
Abstract: DL-4146-101
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DL-4146-101S 405nm 1-1-1010F 03-3837-6272FAX03-3837-6390 DL-4146-101S DL-4146-101 | |
DL-3147-060
Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
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405nm 980nm DL-3147-060 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v | |
SIC01M-18Contextual Info: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The |
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SIC01M-18 SIC01M-18 | |
SIC01S-B18Contextual Info: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The |
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SIC01S-B18 SIC01S-B18 | |
SIC01S-C18Contextual Info: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The |
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SIC01S-C18 SIC01S-C18 | |
SIC01S-18Contextual Info: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The |
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SIC01S-18 SIC01S-18 | |
SIC01S-18ISO90
Abstract: SiC Photodiodes
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SIC01S-18ISO90 SIC01S-18ISO90 SiC Photodiodes | |
SIC01M-5LENSContextual Info: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The |
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SIC01M-5LENS SIC01M-5LENS | |
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LV4906
Abstract: LV4921 LV47006 LC70301 LC74157 LV4906V LC786927 lv47006p LC71F7001 lv49152
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LC749402BG LC74M1701 ARM926EJ-STM 256Mbit 16Mbit 14MHz, 27MHz P125A LV4906 LV4921 LV47006 LC70301 LC74157 LV4906V LC786927 lv47006p LC71F7001 lv49152 | |
DL-4146-101
Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
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UPS APC 800 CIRCUIT
Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
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RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI |