4020BN Search Results

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® 4020BN 400V 26.0A 0.20Í1 APT4025BN 400V 23.0A 0.25Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 4020BN APT 4025BN

APT4020BN

Abstract: 4020BN APT4025BN 0504007
Contextual Info: D TO-247 G S POWER MOS IV 4020BN 400V 26.0A 0.20Ω APT4025BN 400V 23.0A 0.25Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

0504007

Contextual Info: D TO-247 G S POWER MOS IV 4020BN 400V 26.0A 0.20Ω Ω APT4025BN 400V 23.0A 0.25Ω Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

pin configuration of CD4020

Abstract: 4040b cmos 4020BN CD4040BHSR qml-38535 4020B 4024B 4040B smd transistor a35 5962R9662805VYC
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R183-97. 97-02-24 Monica L. Poelking B Changes in accordance with NOR 5962-R402-97. 97-07-29 Raymond Monnin C Make corrections to block diagrams in figure 2. Incorporate revisions A and B.

SS1147

Abstract: sml4020bn sml3520bn 3525b
Contextual Info: SEMELAB PLC Û1331Ô7 LOE D DODDblE MS? • S M L B d MOS POWER = & = -»S 1111 SEME 4020BN SML3520BN SML4025BN SML3525BN LAB 400V 350V 400V 350V 26.0A 26.0A 23.0A 23.0A 0.20Q 0.20Í2 0.25Í2 0.2012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

qml-38535

Abstract: 4020B 4024B 4040B
Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET 15 REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AG ENCIES OF THE DEPARTM ENT OF DEFENSE 8 PREPARED BY Marcia B Kelleher

Contextual Info: O D O S A D V A N C ED PO W ER Te c h n o lo g y 4020BN APT3520BN APT4025BN APT3525BN POWER MOS IV 400V 350V 400V 350V 26.0A 26.0A 23.0A 23.0A 0.20Q 0.20Q 0.2512 0.2512 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A

4020BN

Abstract: 3520BN APT3520BN
Contextual Info: ADVANCED POW ER Te c h n o l o g y 0 O D O 4020BN APT3520BN APT4025BN APT3525BN s H? WER MOS ÍT0 400V 350V 400V 350V 26.0A 26.0A 23.0A 23.0A 0.20Q. 0.20Í2 0.25Í2 0.25Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified.