400V TO 12V Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1  1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS ON (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds

IRFF320

Abstract: JANTX2N6792 JANTXV2N6792
Contextual Info: PD -90428C IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF320 BVDSS 400V RDS(on) 1.8Ω ID 2.0A  The HEXFET technology is the key to International

IRF330

Abstract: JANTX2N6760 JANTXV2N6760
Contextual Info: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International

Contextual Info: KSM6N40C/KSMF6N40C 400V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6A, 400V, RDS on = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

LD 33 regulator

Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
Contextual Info: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International

IRFF310

Abstract: JANTX2N6786 JANTXV2N6786
Contextual Info: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International

Contextual Info: KSMD2P40 / KSMU2P40 400V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.56A, -400V, RDS on = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD4P40 / KSMU4P40 400V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.7A, -400V, RDS on = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: IRF730B/IRFS730B 400V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 5.5A, 400V, RDS on = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

IRFF320

Abstract: TA17404 TB334
Contextual Info: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP350

Abstract: TB334
Contextual Info: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF 534

Abstract: IRFF320 JANTX2N6792 JANTXV2N6792
Contextual Info: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s

IRF360

Abstract: IRF3601 mosfet irf360
Contextual Info: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF3401

Abstract: IRF340
Contextual Info: PD - 90371 IRF340 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF340 BVDSS RDS(on) 400V 0.55Ω ID 10A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFD320

Abstract: TA17404 TB334
Contextual Info: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF310

Abstract: TB334
Contextual Info: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF330

Abstract: TA17414 TB334 204AA
Contextual Info: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFP350 S e m iconductor July 1999 Data Sheet 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET • 16A ,400V Ordering Information IRFP350 TO-247 • r DS ON = 0.300i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

RURP640CC

Abstract: RURP650CC RURP660CC
Contextual Info: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC

RURP640CC

Abstract: RURP650CC RURP660CC FAIRCHILD to220ab package
Contextual Info: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC

TB1060

Abstract: RURP640CC RURP650CC RURP660CC TB151
Contextual Info: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

Contextual Info: HU^i5B35B 300Vin / 12Vout / 500Watts DC-DC Converter Module Features • DC input range: 180 - 375V • Input surge withstand: 400V for 100ms • DC output: 12V • Programmable output: 10 to 110% • Regulation: +0.2% no load to full load • Efficiency: 85.5%

RURG5040

Abstract: RURG5050 RURG5060
Contextual Info: RURG5040, RURG5050, RURG5060 50A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

Contextual Info: 45 300Vin / 12Vout / 150Watts DC-DC Converter Module Features • • • • • • • • • • • DC input range: 180 - 375V Input surge withstand: 400V for 100ms DC output: 12V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load