400V 70A POWER MOSFET Search Results

Contextual Info: APT60M60JFLL 600V 70A 0.060Ω R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M60JLL 800V 70A 0.060Ω R POWER MOS 7 S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

400V 70A power mosfet

Contextual Info: APT60M60JLL 800V 70A 0.060Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT60M60JFLL 600V 70A 0.060Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

65C7019

Abstract: IPW65R019C7
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R019C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R019C7 1Description TO-247

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STE70NM50 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

65C7019

Abstract: IPZ65R019 PG-TO247-4 ipz65r019c7 smd mosfet 400v
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R019C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R019C7 1Description PG-TO247-4

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET PRELIMINARY DATA TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

PDM1405HA

Contextual Info: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

transistor A2

Abstract: RURH3060CC RURH3040CC RURH3050CC
Contextual Info: RURH3040CC, RURH3050CC, RURH3060CC S E M I C O N D U C T O R 30A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175oC Rated Junction Temperature

PDM1405HA

Contextual Info: MOSFET 140A 500V PDM1405HA PDM1405HA 質量 Approximate Weight :460g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧 Gate-Source Voltage ドレイン電流（連続）

Contextual Info: MOSFET MODULE PD10M441L / PD10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

P2H10M440L

Abstract: 440L PD10M440L PD10M441L
Contextual Info: MOSFET MODULE PD10M441L / PD10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

PDM1405H

Contextual Info: MOSFET 140A 500 V PDM1405HA •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING PD PDM1405HA （単位 Dimension：mm） Rg MOS SBD 1 D2S1 G2 S2 FRD 2 (S2) 3 SBD (D1) MOS FRD S1 G1 Rg 質量 Approximate Weight：460g ■最大定格 Maximum Rating

Contextual Info: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

IRG4PSH71UD

Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

P2H10M440L

Abstract: P2H10M441L PD10M440L PD10M441L
Contextual Info: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧

Contextual Info: MOSFET 70A 450~500 V PD10M441L PD10M440L P2H10M441L P2H10M440L •回路図 CIRCUIT PD P2H Rg Rg G2 S2 MOS 1 D2S1 2 3 D1 S2 G2 S2 MOS S2 D1 D2 S1 MOS MOS S1 G1 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PD10M441L440L

"clip bonding"

Abstract: 4 CCFL Lamps Inverter 8 CCFL Lamps Inverter circuit ATPAK mosfet h bridge inverter 40w inverter circuit CCFL 2 CCFL Lamps Inverter CCFL inverter 32 ATP206
Contextual Info: T OP I C S Promotional Product Topics Thin-type large-current Power MOSFET Halogen-free 「ATPAK Series 」 New Package By applying Sanyo’s unique Clip Bonding Tech, the new ATPAK series realized 100A rated current, which is the largest among the same class.

diode s40a

Contextual Info: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

Contextual Info: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧