400V 6A TRANSISTOR Search Results

g6n50e

Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR

g6n50e

Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HARRIS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EMITTER • t fall:1-°Hs

g6n50e

Abstract: HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S G6N40E G6N50
Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage

G6N50E1D

Abstract: hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E
Contextual Info: HGTP6N40E1D, HGTP6N50E1D S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER COLLECTOR GATE • Latch Free Operation • TFALL: < 1.0µs • High Input Impedance

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

MOSFET 400V TO-220

Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series
Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF Series

Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

EM- 534 motor

Abstract: 6N50E 840CV GE 639 g6n50e
Contextual Info: m HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A FR FU S ia j sem iconductor 6A, 400V and 500V N-Channel IGBTs April 1995 Features Packages H G T D 6N 40 E 1, H G TD 6N50E1 • 6A, 400V and 500V J E D E C T O -251A A ’ ^CE ON ’ 2-5V Max. EMITTER

FQP6N40CF

Contextual Info: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

g6n50e

Abstract: HGTD6N50E1S G6N40E G6N50 flange terminal 25C1 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1
Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A R R IS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Packages Features HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EM ITTER • T f a l l 1 1 -0 ^3

Contextual Info: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

G6N50E1D

Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
Contextual Info: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS

FQB6N40CF

Abstract: FQB6N40CFTM
Contextual Info: FRFET TM FQB6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

RURP640CC

Abstract: RURP650CC RURP660CC FAIRCHILD to220ab package
Contextual Info: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC

TB1060

Abstract: RURP640CC RURP650CC RURP660CC TB151
Contextual Info: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

Contextual Info: KSM6N40C/KSMF6N40C 400V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6A, 400V, RDS on = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

RURP640CC

Abstract: RURP650CC RURP660CC
Contextual Info: RURP640CC, RURP650CC, RURP660CC Semiconductor 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

2SC3083

Contextual Info: Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 1 : Base

Contextual Info: Ordering number:ENN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 15.6 14.0

2SC3083

Abstract: ITR05305 ITR05306 ITR05307 ITR05308 ITR05309
Contextual Info: Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 15.6 14.0

Contextual Info: [O rderin g number-. EN 947B 2SC3083 N0.947B NPN Triple Diffused Planar Silicon Transistor 400V/6A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute Maxiaua Ratings at Ta=25°C Collector-to-Base Voltage

transistor IC 12A 400v

Abstract: 400v 6a transistor 400V 100MA NPN TV power transistor datasheet BU408D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU408D DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 0.5 s(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS ·Designed for use in horizontal deflection output stages

svd730

Abstract: SVD730F svd730t N-channel enhancement 200V 60A
Contextual Info: SVD730T/SVD730F 6A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching