400V 5A MOSFET Search Results
400V 5A MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
TCK424G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
400V 5A MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
STD6NC40Contextual Info: STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh II MOSFET TYPE VDSS RDS on ID STD6NC40 400V <1Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & |
Original |
STD6NC40 STD6NC40 | |
STD6NC40Contextual Info: STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD6NC40 400V <1Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & |
Original |
STD6NC40 STD6NC40 | |
STD6NC40Contextual Info: STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD6NC40 400V < 1Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & |
Original |
STD6NC40 STD6NC40 | |
F740
Abstract: SDP740
|
Original |
SDP/F740 O-220 O-220F SDF740 SDP740 O-220/220F F740 SDP740 | |
USSR DIODE
Abstract: IRF730
|
OCR Scan |
IRF730 O-220 USSR DIODE IRF730 | |
Contextual Info: IRF730 Data Sheet Title F73 bt 5A, 0V, m, July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified |
Original |
IRF730 IRF730 O-220AB TB334 | |
Contextual Info: IRFF330 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of |
Original |
IRFF330 TB334 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N40K-MT Power MOSFET 5A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in |
Original |
5N40K-MT 5N40K-MT QW-R205-050 | |
Contextual Info: IRFF320 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of |
Original |
IRFF320 IRFF320 O-205AF TB334 | |
Contextual Info: IRFD320 Data Sheet Title FD 0 bt 5A, 0V, 00 m, July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of |
Original |
IRFD320 TB334 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N40 Power MOSFET 5A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 5N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a |
Original |
O-220 O-220F1 O-252 QW-R502-571 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N40 Preliminary Power MOSFET 5A, 400V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 5N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a |
Original |
O-220 O-252 QW-R502-571 | |
Contextual Info: Æ lltron FR DUOT DEVICES,INC. CATTALO' N-CHANNEL ENHANCEMENT MOS FET 400V , 5 .5A , l.On ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt. l Drain-Gate Vo Itage (R gs = 1•O M n ) (1) Gate-Source Voltage Cont inuous Drain Current Continuous |
OCR Scan |
300dS. SDF330 SDF330 MIL-S-19500 | |
F730RContextual Info: • tJ303271 [1054053 ÛT2 g HARRIS ■ HAS IR F730/731/732/733 IR F730R /731R /732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.SA and S.5A, 350V - 400V TOP VIEW • rp s (o n = 1 -0 0 and 1 .5 ÎÏ |
OCR Scan |
tJ303271 F730/731/732/733 F730R /731R /732R /733R IBF730, IRF731, IRF732, IRF733 | |
|
|||
Contextual Info: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters |
Original |
MQFL-270-12D 55-400V 55-475V | |
Contextual Info: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V 12V 10A 86% @ 5A / 88% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters |
Original |
MQFL-270-12S 55-400V 55-475V | |
Contextual Info: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V 12V 10A 86% @ 5A / 88% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters |
Original |
MQFL-270-12S 55-400V 55-475V | |
Contextual Info: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V 12V 10A 86% @ 5A / 88% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters |
Original |
MQFL-270-12S 55-400V 55-475V | |
RTCA DO-160Contextual Info: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters |
Original |
MQFL-270-12D 55-400V 55-475V RTCA DO-160 | |
Contextual Info: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters |
Original |
MQFL-270-12D 55-400V 55-475V | |
Contextual Info: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters |
Original |
MQFL-270-12D 55-400V 55-475V | |
Contextual Info: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters |
Original |
MQFL-270-12D 55-400V 55-475V | |
mqfl 270 l
Abstract: MQFL-270-12S-Y-ES
|
Original |
MQFL-270-12S 55-475V 55-400V mqfl 270 l MQFL-270-12S-Y-ES | |
LZP10N40P
Abstract: 400v 5a mosfet mosfet TEST 400V power mosfet N-Channel mosfet 400v Diode 400V 5A mosfet 400V
|
Original |
LZP10N40P above25 to150 LZP10N40P 400v 5a mosfet mosfet TEST 400V power mosfet N-Channel mosfet 400v Diode 400V 5A mosfet 400V |