400V 10A HIGH EFFICIENCY RECTIFIER Search Results

SF10A400H

Abstract: ultrafast diode 10a 400v sF10A400 400V 10A high efficiency rectifier
Contextual Info: SF10A400H Ultrafast Recovery Rectifier 400V, 10A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency  Full lead Pb -free and RoHS compliant device

Contextual Info: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters

Contextual Info: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters

Contextual Info: MQFL-270-12D Dual Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V ±12V 10A 87% @ 5A /89% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters

Contextual Info: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V 12V 10A 86% @ 5A / 88% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters

Contextual Info: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-400V 155-475V 12V 10A 86% @ 5A / 88% @ 10A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters

mqfl 270 l

Abstract: MQFL-270-12S-Y-ES
Contextual Info: MQFL-270-12S Single Output H igH R eliability DC-DC C onveRteR 155-475V 12V 10A 86% @ 5A / 86% @ 10A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 155-400V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters

APT2X10SC120J

Contextual Info: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC120J APT2X11SC120J 27 2 T- SO APT2X11SC120J APT2X10SC120J 1200V 1200V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT10SC120B 1200V 10A APT10SC120S 1200V 10A 1 2 2 1 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

Contextual Info: 1 2 TO-220 1 - Cathode 2 - Anode Back of Case - Cathode APT10SC120K 1200V 10A 1 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

10SC6

Contextual Info: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC60J APT2X11SC60J 27 2 T- SO APT2X11SC60J APT2X10SC60J 600V 600V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

Contextual Info: 1 3 2 TO-220 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT10SC120KCT 1200V 2X10A 1 3 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

c_00572

Contextual Info: 1 2 TO-220 D2PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT10SC60K APT10SC60SA 600V 10A 600V 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

SF20A400H

Abstract: SF20A400HPI marking JC diode SF20A
Contextual Info: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction

BT1603

Abstract: si2112 ae rw solid state relay 220V st1602 T100R T100R-C 4N4U
Contextual Info: [* q PHOTO SCR OPTOCOUPLERS m u in m m 4N394N40 ib fi The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. • ■ • ■ ■ 0.41 DIMENSIONS IN mm

Contextual Info: 1 3 TO 2 -24 7 1 - Cathode 1 2 - Anode 1 Cathode 2 3 - Anode 2 APT10SC60BHB 1 2 600V 2X8A 3 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Output Rectifier • Schottky Barrier • Switching Losses Nearly

RECTIFIER DIODE 1000A schottky

Abstract: schottky RECTIFIER DIODE 1000A APT10SC60G
Contextual Info: 1 2 TO-257 1 - Cathode 2 - Anode Back of Case - Cathode APT10SC60G 600V 9A 11 N.C 22 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

Contextual Info: 1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT10SC60KCT 600V 2X10A 1 3 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

sci46d

Contextual Info: [s O PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

SD15

Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT

Contextual Info: PD-9.1068 In te rn atio n al Rectifier_ 1RF740LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Cos& Crss Extremely High Frequency Operation Repetitive Avalanche Rated

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

10a 400V ultra fast diode d2pak

Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

diode 10a 400v

Abstract: ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF
Contextual Info: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA