400TA Search Results

Contextual Info: M29W400T M29W400B SGS-THOMSON IIIIMJì ILIì M W IIÈ Ì 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME

M29W400

Abstract: M29W400B M29W400T
Contextual Info: M 29W 400T M 29W 400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10|iS by Byte / 1 6|as by Word typical

M29W400

Abstract: M29W400B M29W400T
Contextual Info: M29W400T k7# . OMGMiDlglLECTMMSl _ M29W400B W. SGS-THOMSON 4 Mb x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME

DSP48

Abstract: digital FIR Filter verilog code in hearing aid UG073 transposed fir Filter VHDL code VHDL code for polyphase decimation filter digital FIR Filter verilog code digital FIR Filter VHDL code 3 tap fir filter based on mac vhdl code verilog code for barrel shifter MULT18X18_PARALLEL.v
Contextual Info: XtremeDSP for Virtex-4 FPGAs User Guide UG073 v2.7 May 15, 2008 R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the “Documentation”) to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

M29W400B

Abstract: M29W400 M29W400T
Contextual Info: M 29W 400T M 29W 400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10 |iS by Byte / 1 6|os by Word typical

400BA

Abstract: FPT-48P-M19 MBM29F400TA/BA-70
Contextual Info: ^t c\o FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -2 0 8 1 2 -1 E ft FLASH MEMORY C M O S 4M 512K 8/256K x 16 X 400TA/MBM29F400BA • DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

FF1148 raw material properties

Abstract: BIM G18 Y1 XQ4VSX55 xc4vlx25-10ffg668 XC4VFX60 ROCKETIO H8 hitachi programming manual Hearing Aid Circuit Diagram spartan ucf file 6 Virtex4 XC4VFX60 UG072 xi
Contextual Info: QPro Virtex-4 Extended Temperature FPGAs DC and Switching Characteristics R DS595 v1.2 December 20, 2007 Preliminary Product Specification QPro Virtex-4 Electrical Characteristics QPro Virtex™-4 FPGAs are available in -10 speed grade and qualified for industrial (TJ = –40°C to +100°C), and for

M29W400

Abstract: M29W400B M29W400T
Contextual Info: W # S C S -T H O M S O N k7 # . MiniamigmaainsiiaMnfBg M 29W 400T M 29W 400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SING LE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME

M29W400

Abstract: M29W400B M29W400T
Contextual Info: W . SGS-THOMSON M29W400T k7# . OMGMiDlglLECTMMSl _ M29W400B 4 Mb x8/x16, Block Erase) LOW VOLTAGE SING LE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME

elecronic lock

Abstract: M29W400 M29W400B M29W400T
Contextual Info: w, SGS-THOMSON M 29W 400T M 29W 400B k7 #» RitlDÊlMIlilLIKËinSMQtÊS 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME

Contextual Info: M29W400T M29W400B SGS-THOMSON 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME 10p,s by Byte / 1 6p.s by Word typical