K2400G
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon bilateral voltage triggered device in DO-15 package, with peak off-state voltage from 70 to 220V, on-state RMS current of 1A, and surge current capability up to 16.7A non-repetitive. |
Original |
PDF
|
|
|
|
K2400G
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Silicon bilateral voltage triggered switch with high power-handling capability, available in breakover voltages from 80V to 270V, 1.0A RMS on-state current, and surge current up to 16.7A, suitable for high-voltage ignition and protection applications. |
Original |
PDF
|
|
|
|
K1400G
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
Bidirectional silicon switch with high power handling, available in KxxxxG series, featuring breakover voltages from 80V to 270V, on-state current up to 1A, and surge current tolerance of 16.7A peak, suitable for high-voltage ignition and protection applications. |
Original |
PDF
|
|
|
|
K1400G
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon bilateral voltage triggered device in DO-15 package with peak off-state voltage from 70 to 220 V, non-repetitive surge current up to 16.7 A, and operating junction temperature from -40 to +125 °C. |
Original |
PDF
|
|
|
|
1SS400G
|
|
JCET Group
|
High-speed switching diode in SOD-723 surface-mount package, with 80V DC blocking voltage, 225mA forward current, 4ns reverse recovery time, and 3.0pF capacitance at 0.5V. |
Original |
PDF
|
|
|
K2400G
