AKZE40N03
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AK Semiconductor
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N-Channel 30-V MOSFET with RDS(on) of 8 mΩ at VGS = 10 V, 11 mΩ at VGS = 4.5 V, continuous drain current up to 50 A, available in TO-252 package. |
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CJAB40N03
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JCET Group
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N-Channel Power MOSFET CJAB40N03 with 30V drain-source voltage, 40A continuous drain current, 6.5mΩ typical RDS(on) at 10V VGS, available in PDFN WB3.3×3.3-8L package for high-density switching applications. |
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SLB140N03T
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Maplesemi
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N-Channel MOSFET SLB140N03T with 30V drain-source voltage, 140A continuous drain current, 2.0mΩ typical RDS(on) at VGS = 10V, low input capacitance, and fast switching capability in a TO-263 package. |
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JMTP240N03D
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 9A dual N-channel enhancement mode power MOSFET in SOP-8 package with RDS(ON) less than 20.2mΩ at VGS=10V and low gate charge, suitable for load switching and power management applications. |
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JMTQ240N03D
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 12A dual N-channel enhancement mode power MOSFET in PDFN3x3-8L-D package with RDS(ON) less than 21.6mΩ at VGS=10V and 30mΩ at VGS=4.5V, featuring advanced trench technology for power management and load switching applications. |
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SLD40N03T
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Maplesemi
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N-Channel 30V 40A MOSFET with typical RDS(on) of 6.5 mΩ at VGS = 10 V, featuring low on-resistance, fast switching, and avalanche testing, available in TO-252 package. |
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JMTQ040N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 60A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.0mΩ at VGS=10V and 6.2mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. |
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SLP140N03T
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Maplesemi
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N-channel MOSFET with 30V drain-source voltage, 140A continuous drain current, 2.4mΩ typical RDS(on) at VGS = 10V, TO-220C package, suitable for power management and load switching applications. |
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JMTQ240N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 12A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 19.4m ohm at VGS = 10V and 27.7m ohm at VGS = 4.5V, housed in a PDFN3x3-8L package, suitable for power management and load switching applications. |
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JMTV240N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 10A N-channel Enhancement Mode Power MOSFET in DFN2020-6L package with RDS(ON) less than 20.3mΩ at VGS=10V and low gate charge, suitable for power management and load switching applications. |
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JMTG040N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 5.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested, in PDFN5x6-8L package. |
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AKZE40N03
