4-INPUT OR GATES TTL Search Results

Contextual Info: 'I LS TTL DN74LS Series DN74LS55 DN74LS55 2 - wide 4 - input AND-OR-INVERT Gates • Description P-1 DN74LS55 contains tw o 4-input AND-OR-INVERT gates. ■ Features • • • • Low power consumption Pd = 2.75mW typical High speed (tpd = 12ns typical)

Contextual Info: LS TTL DN74LS Series DN74LS55 DN74LS55 bN 74IS 55 2 - wide 4 - input AND-OR-INVERT Gates • Description P-1 DN74LS55 contains two 4-input AND-OR-INVERT gates. ■ Features • • • • Low pow er consum ption Pa = 2.75mW typical High speed ( t pd = 12ns typical)

TC4086BP

Abstract: 5VDD-05
Contextual Info: TC4086BP TC40S6BP C 2M O S DIGITAL INTEG RATED CIRCUIT SILIC O N MONOLITHIC EXPANDABLE 4-WIDE 2-INPUT AND-OR-INVERT GATE TC4086BP contains four 2 input AND gates and one OR gate which logically adds OR all the AND gates having an expander input to form AND-OR-select gate,

74LS32 configuration

Abstract: 74hc32 74HC GD54HC32 GD74HC32 pin configuration logic symbol 74LS32 logic symbol 74LS32
Contextual Info: GD54/74HC32, GD54/74HCT32 QUAD 2-INPUT OR GATES General Description These devices are identical in pinout to the 5 4 /7 4 L S 3 2 . They contain four independent 2-input OR gates. These devices are characterized for operation over wide temperature ranges to meet in­

74LS32 configuration

Abstract: 74hc32 GD74HC32 74LS32 Quad 2-Input OR Gate 74HC logic symbol 74LS32 pin configuration logic symbol 74LS32 74HC LOGIC PINOUT 74LS32 pinout
Contextual Info: GD54/74HC32, GD54/74HCT32 QUAD 2-INPUT OR GATES General Description These devices are identical in pinout to the 5 4 /7 4 L S 3 2 . They contain four independent 2-input OR gates. These devices are characterized for operation over wide temperature ranges to meet in­

74hct386

Contextual Info: GD54/74HC386, GD54/74HCT386 QUAD 2-INPUT EXCLUSIVE OR GATES General Description These devices are identical in pinout to the 5 4 /7 4 L S 3 8 6 . They contain four independent 2-input Exclusive OR gates. The HC/HCT 3 8 6 are electrically identical to the HC/HCT 8 6 , However,

74HCT51

Abstract: GD74HCT51
Contextual Info: GD54/74HC51, GD54/74HCT51 DUAL AND-OR-INVERT GATES General Description These devices are identical in pinout to the 5 4/74L S 51 . They contain one 2-wide 2-input & one 2-wide 3-input AND-OR-INVERT gates. These devices are characterized for operation over wide

14012BG

Abstract: MC14012B MC14012BCP CD4000 MC14012BCPG MC14012BD SOIC-14 14012B
Contextual Info: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4-input NAND gates are constructed with P-Channel and N-Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.

gate drive protection inverter

Abstract: 47 vfk 4-input nand gates ttl power inverter circuit diagram schematics voltage inverter schematic TL 413 CD4000 series applications MC14012BCP p-Channel Logic Level Enhancement Mode schematic diagram inverter control
Contextual Info: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4-input NAND gates are constructed with P-Channel and N-Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.

Contextual Info: DN74LS54 LS TTL DN74LS Series DN74LS54 4 - wide AND-OR-INVERT Gates P-1 • Description DN74LS54 contains four 2-input and four 3-input AND-ORINVERT gates. ■ Features • • Low power consumption Pd = 4.5mW typical High speed (tpci = 12ns) • Low output impedance

DN74LS55

Abstract: MA161
Contextual Info: DN74LS55 LS TTL DN74LS Series DN74LS55 b^7<US55 2 - wide 4 - input A N D -O R -IN V E R T Gates P-1 • Description DN74LS55 contains tw o 4-input AND-OR-INVERT gates. ■ Features • • • • Low pow er consum ption P j = 2.75mW typical High speed ( t pd = 12ns typical)

Contextual Info: LS TTL DN74LS Series DN74LS54 DN74LS54 Ì>N 7 4. L S 4 - wide AND-OR-INVERT Gates • Description P-1 DN 74LS54 contains four 2-input an d four 3-input AND-ORINV ERT gates. ■ Features • • • • Low pow er consum ption P j = 4.5mW typical High speed ( t p d = 12ns)

Contextual Info: M M O T O R O L A TYPES SN54ALS20, SN74ALS20 DUAL 4-INPUT POSITIVE-NAND GATES description These devices contain tw o independent 4-input NAND gates. They perform the boolean functions Y = A-B C'D or Y = A + B + C + D in positive logic. (TOP VIEW) U l4 1AC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U74HCT21 CMOS IC DUAL 4-INPUT AND GATES „ DESCRIPTION The U74HCT21 contains two independent 4-input AND gates. They perform the Boolean function Y=A • B • C • D or Y=A + B + C + D in positive logic. „ FEATURES * Operation Voltage Range: 4.5V~5.5V

TC4086BP

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM0S6BP TC4086BP E X P A NDA BLE 4-W IDE 2-I N P U T A N D - O R - I N V E R T GATE TC4086BP contains four 2 input AND gates and one OR gate which logically adds OR all the AND gates having an expander input to form AND-OR-select gate,

HEF4072BT

Abstract: HEF4072B HEF4072BD HEF4072BP
Contextual Info: HEF4072B gates DUAL 4-INPUT OR GATE The HEF4072B provides the positive dual 4-input OR function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance. rajRJilLIIlJRJiUIL Vdd 0 2 le D HEF4072B o, II ^2 I7 *6

Contextual Info: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.

Contextual Info: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.

MC14012

Abstract: mc14012b 14012BG
Contextual Info: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.

Contextual Info: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.

CD4072BCN

Abstract: CD4072BC CD4082BCN CD40828
Contextual Info: CD4072BM/CD4072BC Dual 4-Input OR Gate, CD4082BM/CD4082BC Dual 4-Input AND Gate General Description Features These dual gates are m onolithic complementary MOS CMOS integrated circuits constructed with N-and P-channel enhancement mode transistors. They have

Contextual Info: TYPES SN54H21, SN54LS21, SN74H21, SN74LS21 DUAL 4-INPUT P0SIT1VE-AND GATES _ REVISED APRIL 1985 SN54H21 . . . JPACKAGE SN54LS21 . . . J OR W PACKAGE S N 74H 21 . . . J OR N PACKAGE SN74LS21 . . . D, J OR N PACKAGE • * Package Options include Both Plastic and

Contextual Info: TYPES SN54S64, SN54S65, SN74S64, SN74S65 4 -2 -3 -2 INPUT AND-OR-INVERT GATES REVISED DECEMBER 1983 SN54S64, SN54S65 . . J OR W PACKAGE SN74S64, SN74S65 . . D, J OR H PACKAGE Package Options Include Both Plastic and Ceramic Chip Carriers in Addition to Plastic

TEA 1510

Contextual Info: M MOTOROLA Military 10H519 4-Wide 4-3-3-3 Input “OR-AND” Gate ELECTRICALLY TESTED PER: 5962-8772801 The 10H519 is a 4-wide 4-3-3-3 input OR/AND gate with one input from two gates common to pin 10. This MECL 10H part is a functional/pinout duplication of the standard MECL