4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY Search Results

CD22101E

Abstract: CD22101 CD22101F CD22102 CD22102E CD4029
Contextual Info: CD22101, CD22102 S E M I C O N D U C T O R CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory January 1997 Features Description • Low ON Resistance . . . . . . . . . . . . 75Ω Typ at VDD = 12V CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a

Contextual Info: CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory March1993 Features Description • Low ON Resistance. 75V Typ. atVpo = 12V CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints transmission gates with a 4line to 16-line decoder and 16 latch circuits. Any one of the

0U47

Abstract: COSMOS 817 COSMOS RA TP20N
Contextual Info: HARRIS SEMICOND SECTOR ffl blE ]> 43D5271 004721^ 2?T B H A S CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory March 1993 Features Description • Low ON Resistance. 75V Typ. at V qq > 12V CD22101 and CD22102 crosspoint switches consist of 4 x

MC145100

Abstract: MC-142100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCI 42100 MC145100 4 x 4 Crosspoint Switch with Control Memory The MC142100 and MC145100 consist of 16 crosspoint switches analog transmission gates organized in 4 rows and 4 columns. Both devices have 16 latches, each of which controls the state of a particular switch. Any of the 16

Contextual Info: [ L3L7253 DDfi^EBfl MDR • M O T S bbE D MOTOROLA SEMICONDUCTOR MOTOROLA SC TELECOM TECHNICAL DATA MCI 421OO MCI 451OO 4 x 4 Crosspoint Switch with Control Memory The MC142100 and MC145100 consist of 16 crosspoint switches (analog transmission gates) organized in 4 rows and 4 columns. Both devices have 16

KT8592N

Abstract: 4X4 ANALOG crosspoint switch KT8592 switch plexer
Contextual Info: CMOS INTEGRATED CIRCUIT KT8592 4 x 4 CROSSPOINT SWITCH WITH CONTROL MEMORY The KT8592 consists of 4 x 4 matrix-array with 16 latches. Any one of 16 switches can be selected by applying its address to the device and a pulse to the strobe input pin. The selected switch can be turn­

Contextual Info: C D 22100 Semiconductor CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating January 1997 Features Description • Low ON R esistan ce. 7 5 ß (Typ) at V DD = 12V CD22100 combines a 4 x 4 array of crosspoints (transmis­

Contextual Info: h a frris CD22101, CD22102 S E M I C O N D U C T O R M W a j a CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory January 1997 Features Description • Low ON R esistan ce.750 . Typ at V DD = 12V CD22101 and CD22102 crosspoint switches consist of

XO 403

Contextual Info: KT8592 CMOS INTEGRATED CIRCUIT 4 x 4 CROSSPOINT SWITCH WITH CONTROL MEMORY The KT8592 contains 4 x 4 matrix-array w ith 16 latches. Any one of 16 switches can be selected by applying its address to the device and a pulse to the strobe input pin. The selected switch can be turn­

M22100

Abstract: PLCC20 22100 switch
Contextual Info: M22100 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY . . . . . LOW ON RESISTANCE – 75 Ω TYP. AT VDD = 12 V ”BUILT-IN” CONTROL LATCHES LARGE ANALOG SIGNAL CAPABILITY ± VDD/2 TRANSMITS SIGNALS UP TO 10 MHz MATCHED SWITCH CHARACTERISTICS ∆RON = 18 Ω TYP. AT VDD – VSS = 12 V.

Contextual Info: S3 CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory J a n u a ry 1997 Features Description 75£i Typ at Vpp = 12V • "Built - In” Latched Inputs • Large Analog Signal Capability. i^oc/2 • Switch Bandw

M402101BP

Contextual Info: MITSUBISHI < DIGITAL ASSP> M402101BP 4 X 8 CROSSPOINT SWITCH WITH CONTROL MEMORY DESCRIPTION The M 402101B is a semiconductor integrated circuit con­ PIN CONFIGURATION TOP VIEW sisting of a 4 X 8 cross point switch capable of selecting 32 analog switches with 5 address inputs as well as 2 types of

P043A

Abstract: transistor Y4 M22101 M22102 P058C
Contextual Info: M22101 M22102 4 X 4 X 2 CROSSPOINT SWITCHES WITH CONTROL MEMORY . . . . . LOW ON RESISTANCE – 75 Ω TYP AT VDD = 12 V ”BUILT-IN” LATCHED INPUTS LARGE ANALOG SIGNAL CAPACITY ± VDD/2 10 MHz SWITCH BANDWITH MATCHED SWITCH CHARACTERISTICS ∆ RON = 8 Ω TYP, AT VDD = 12 V

4-line-to-16-line decoder ic

Abstract: transistor types full 22100 switch
Contextual Info: £ ÿ j SCS-THOMSON IŒ gm[IOT(ô iQ(gS M22100 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY LOW ON RESISTANCE - 75 £2 TYP. AT V d d = 12 V "BUILT-IN" CONTROL LATCHES LARGE ANALOG SIGNAL CAPABILITY± V dd /2 TRANSMITS SIGNALS UP TO 10 MHz MATCHED SWITCH CHARACTERISTICS

Contextual Info: SAMSUNG ELECTRONICS INC KT8592 4SEj> • 00 D i a s i s vitM m s CMOS INTEGRATED CIRCUIT 4 x 4 CROSSPOINT SWITCH WITH CONTROL MEMORY T h e K T8592 contains 4 x 4 m atrix-array with 16 latches. Any one of 16 switches can be selected by applying Its address to the device

Contextual Info: m CD22100 HARRIS S E M I C O N D U C T O R CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating March 1993 Description Features • Low ON Resistance.75ft Typ. at Vqo» 12V CD22100 combines a 4 x 4 army of crosspoints (transmis­

automatic transfer switch circuit diagram

Abstract: CD22100E
Contextual Info: HARRIS SEniCOND SECTOR blE D • 4302271 004721D Q42 B H A S 33 CD22100 CMOS 4 x 4 Crosspoint Switch with Control Memory High-VoltageType 20VRating March 1993 Features Description • Low ON Resistance. 750 Typ. at V qq » 1 2V CD22100 combines a 4 x 4 array of crosspoints (transmis­

22100 CMOS cross point switch

Abstract: 4X4 ANALOG crosspoint switch
Contextual Info: SSI 2 2 1 0 0 CMOS 4x4 Crosspoint Switch with Control Memory Siliconsuifrns INNOVATORS IN/INTEGRATION Data Sheet GENERAL DESCRIPTION FEATURES The SSI 22100 combines a 4 x 4 array of crosspoints transmission gates with a 4-iine-to-16 decoder and 16 latch circuits. Any one of the sixteen transmission gates

Contextual Info: H A R R CD22100 I S S E M I C O N D U C T O R CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating January 1997 Features Description • Low ON Resistance. 75ß (Typ) at VDD = 12V CD22100 combines a 4 x 4 array of crosspoints (transmis­

22100 switch

Abstract: CD22100 cd22100 rca
Contextual Info: MmMbtis SSI 22100 CMOS 4x4 Crosspoint Switch with Control Memory INNOVATORS IN/INTEGRATION Data Sheet GENERAL DESCRIPTION FEATURES The SSI 22100 com bines a 4 x 4 array of crosspoints transm ission gates with a 4-line-to-16 decoder and 16 latch circuits. A ny one of the sixteen transm ission gates

Contextual Info: SGS-THOMSON M22101 M22102 4 X 4 X 2 CROSSPOINT SWITCHES WITH CONTROL MEMORY • LOW ON RESISTANCE - 75 f i TYP AT V d d = 12 V . "BUILT-IN" LATCHED INPUTS ■ LARGE ANALOG SIGNAL CAPACITY + V dd/2 ■ 10 MHz SW ITCH BANDWITH ■ M ATCHED SWITCH CHARACTERISTICS

CD22100E

Abstract: 16-LINE CD22100 CD22100F CD4029 CD22100 ic equivalent
Contextual Info: CD22100 S E M I C O N D U C T O R CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating January 1997 Features Description • Low ON Resistance . . . . . . . . . .75Ω (Typ) at VDD = 12V CD22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch

CD22100D

Abstract: CD22100E CD4029 16-LINE CD22100 CD22100F 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY boonton 91-ca
Contextual Info: CD22100 S E M I C O N D U C T O R CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating March 1993 Features Description • Low ON Resistance . . . . . . . . . . 75Ω Typ. at VDD = 12V CD22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch

X2Y3

Abstract: 30277
Contextual Info: y CD22100 Types Z2. \ 0 0 CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Types 20-Volt Rating The R C A-C D 22100 com bines a 4 x 4 array o f crosspoints (transmission gates) w ith a 4-line-to-16-line decoder and 16 latch c ir­ cuits. A n y one o f th e sixteen transm ission