4 TONE SIREN Search Results

Contextual Info: SPECIFICATIONS PARAMETERS RATED VOLTAGE OPERATING VOLTAGE RANGE RATED CURRENT MAX INGRESS PROTECTION TYPICAL SPL @ 10 cm FREQUENCY RANGE SWEEP RATE VALUES UNITS 12 9 ~ 28 15 IP65 106 2,700 ~ 3,100 Vdc Vdc mA - 4 RED (+) & BLUE (-)/ CONTINUOUS TONE/PULSING TONE

Rt0100

Abstract: Siren Sound Generator 5 sound Siren Sound Generator Siren Sound Generator 7 sound alarm sound generator SOUND GENERATOR Siren cmos sound generator Siren Sound Generator 4 sound 128-KHz
Contextual Info: CT-HOLLON COMPANY SINGLE TONE SIREN/ALARM SOUND GENERATOR eV0100 http://www.ct-hollon.com Tel:0755-8290 8963 Fax:0755-8294 1332 The eV0100 is a CMOS design for single tone alarm sound application. FEATURES: 1. 2. 3. 4. 5. 6. 7. Auto Power down function. Low Operating Voltage:2V-5V.

piezo siren

Abstract: KPE-1700
Contextual Info: Tolerance:±1.0mm at 30 cm S.P.L dB 110 T4 (VDC) Operating Voltage (VDC) 6 -1 4 Rated Voltage (VDC) 12 Operating Frequency (KHz) 2.0—3.5 Current Consumption at 12VDC (mA,maximun) Sound Pressure Level at 12VDC/30cm (dB.minimun) 130 105 Tone Siren Operating Temperature (*C)

ALLIED 8546576

Abstract: 854-6502 C959 854-6565 854-6574 854-6525 transistor 5724 scr 4059 SC250E SC416 TRANSISTOR
Contextual Info: Mallory Sonalert and Minilert Audible Warning Devices Visit MalloryÕs Website at www.nacc-mallory.com PC Board Mounted Sonalert Signal Compact Sonalert II Audible Signal c 4-28 VDC c Continuous Tone 64-78 dB Sound Level c 3-16 mA Typical Operating Current

KPE-650S

Abstract: KPE-650SA KPE-650SAN KPE-657S KPE-653SA KPE-651S KPE-651SA KPE-620SAN KPE-657SA KPE-648S
Contextual Info: Model No. with tin-plated uipfXKj screw Minimum Operating Current Sound Pressure Voltage Range Consumption Level at 'AGCC Non-pel* (mA) 30 cm All ctfters DCon!)' Case Style Rated Frequency ♦500(Hz) Tone KPE-650S 2800 Continuous 84 98 4 28 2 22 A 1 40 KPE-651S

RT0104

Contextual Info: Rato RT0104 The RT0104 is a CMOS Design for single tone alarm sound application Features Pin Diagram Low Operating Voltage 3V ~ 5V CMOS process On-Chip RC oscillator Low stand by current OSC2 OSC1 T1 GND 1 2 3 4 8 7 6 NC VCC BZ2 BZ1 5 RT0104 Pin Description

SN76477N

Abstract: SN76477 SN76477NF voltage controlled steam train sound chip SN76477N application SN76477N train voltage controlled steam train sound Steam Sound Generator circuit diagram SN76477N SOUND GENERATOR sn76*n sound generator
Contextual Info: 1 c irc u its #”» u v r~m « w «• fe# i a u A lb ­ ^ COMPLEX SOUND 00 4 0 9 6 . D li- S 1 2 6 * 2 . J f J L > / 1 9 7 8 'S 2 V ? • N O R N F D U A L - IN - L IN E P A C K A G E T O P V IE W Generates Noise, Tone, or Low-Frequency-Based Sounds,

SGA-0163

Contextual Info: Preliminary Preliminary SGA-0163 Product Description DC-4500 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices’ SGA-0163 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.1V. This RFIC uses the latest Silicon

SGA-3563

Contextual Info: Preliminary Preliminary SGA-3563 Product Description DC-5000 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices’ SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon

SGA-0363

Abstract: transistor CD 910
Contextual Info: Preliminary Preliminary SGA-0363 Product Description DC-5000 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices’ SGA-0363 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.5V. This RFIC uses the latest Silicon

Xa3 TRANSISTOR

Abstract: matsuo
Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Xa3 TRANSISTOR

Abstract: MCH18 SXA-389 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z
Contextual Info: SXA-389 SXA-389Z Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology

NGA-286

Abstract: Sirenza Microdevices, Inc
Contextual Info: Preliminary NGA-286 Product Description Sirenza Microdevices’ NGA-286 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up

xa3b

Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent

MCH18

Abstract: SXA-389B xa3b EL115
Contextual Info: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

SGA-7489

Abstract: 7489 a74 sot-89 DC-3000 MCH185A101JK mrc18 ECB-100607
Contextual Info: Preliminary SGA-7489 Product Description Sirenza Microdevices’ SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters

a3bz

Abstract: marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389B SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking
Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent

Contextual Info: Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

NGA-186

Abstract: Sirenza Microdevices, Inc mmic n1 SIRENZA MARKING
Contextual Info: Preliminary Preliminary NGA-186 Product Description Sirenza Microdevices’ NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up

Siren Sound Generator 7 sound

Abstract: cmos sound generator 8 pin sound chip ic alarm sound generator Siren Sound Generator 5 sound utc sound generator siren 6 tone Siren Sound Generator 4 sound Siren alarm sound
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1617 CMOS IC 6 TONES SIREN/ALARM SOUND GENERATOR „ DESCRIPTION The UTC 1617 is a CMOS design for 6 different alarm sounds application. The sound of UTC 1617 will be generated in cycling sequence. By the way, UTC 1617 is also partitioned to 6 types for single

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1617 CMOS IC 6 TONES SIREN/ALARM SOUND GENERATOR  DESCRIPTION The UTC 1617 is a CMOS design for 6 different alarm sounds application. The sound of UTC 1617 will be generated in cycling sequence. By the way, UTC 1617 is also partitioned to 6 types for single

Contextual Info: Preliminary NGA-386 Product Description Sirenza Microdevices’ NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

1485C

Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable