4 OE 18A Search Results

LCH245A

Contextual Info: SN54LVCH245A, SN74LVCH245A OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS www.ti.com SCES008O – JULY 1995 – REVISED DECEMBER 2005 FEATURES 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC OE B1 B2 B3 B4 B5 B6 B7 B8 A1 A2 A3 A4 A5 A6 A7 A8 1 20 19 OE

Contextual Info: SN54LVTH245A, SN74LVTH245A 3.3ĆV ABT OCTAL BUS TRANSCEIVERS WITH 3ĆSTATE OUTPUTS SCBS130T − MAY 1992 − REVISED SEPTEMBER 2003 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC OE B1 B2 B3 B4 B5 B6 B7 B8 A1 A2 A3 A4 A5 A6 A7 A8 20 A2 A1 DIR VCC 1 SN54LVTH245A . . . FK PACKAGE

jm2030

Abstract: Z111 L0614
Contextual Info: FAST CM O S EEPROM WITH SERIAL PRO TOC OL C H A N N E L SPC 16K ( 2 K x 8-BIT) IDT78C 18A FEATURES: DESCRIPTION: • 2K x 8 EEPROM with serial write and readback The IDT78C18A is a 5 volt only 2 K x 8 Electrically Erasable Programmable Read-Only M e n« ^(E E P R O M ) with Serial Proto­

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - R EVISIO N S LOC 6 CE ALL RIGHTS RESERVED. DESCRIPTION C2 C3 REVISED—ADDED - 2 4 , R E V IS E D —A D D ED -25 09N O V07 18AUG09 -20 JWD JD JS JS

0Z96

Abstract: bc 813 TQFP-208 SA1100 teradyne victory BC 147 B
Contextual Info: From: QUOIN:MDBELKIN "Josh Belkin NIO1/J5 dtn 285-3337 18-Aug-1997 1513" 18AUG-1997 15:15:42.54 To: ARDC:REIS,PETST4:LOU CC: Subj: SA1100.BSDL now passing all pins except for TDO stuck-low problem -SA-1100.bsdl

KMF318

Abstract: M06G KMF318-GS
Contextual Info: 7 •217- £ SPECIFICATIONS m y 42 VOLTAGE 500Vac FREQUENCY 5 0 /60H z CURRENT 18A @ 40"C TEMPERATURE - 2 5 TO 10CTC LEAKAGE CURRENT 30m A @ 50 0 V 50Hz HUMIDITY 9 0 % RH N O N-CONDENSING VIBRATION 10— 200H z 1.8G SURGE 4500Vpk 1.2/50jus ELECTRIC STRENGTH 2250Vac/1 min.

SN74LVC16245A

Abstract: SN74LVC2244A SN74LVC240A SN74LVC244A SN74LVC245A SN74LVCH244A SN74LVCH245A SN74LVCR2245A 9511323 LVC240A
Contextual Info: TEXAS INSTRUMENTS Informational Notification of Errata for the Redesign of Several SN74LVC/LVCHXXXXA Devices August 4, 1997 Revision A Abstract This errata notification from Texas Instruments is due to an administrative error on PCN 5298 dated May 6, 1997 . The changed values were not highlighted in underlined bold italics as stated and the table

18AV

Contextual Info: i Features Single Voltage for Read find Write: 2.7V to 3.6V Fast Read Access Time -1 SO ms internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time *10 seconds Byte-by-Byte Programming - 30 iis/Byte Typical Hardware Oats Protection

C1FFF

Abstract: AT49BV16X4-90 AT49BV1604 AT49BV1604T AT49BV1614 AT49BV1614T AT49BV16X4 F8000
Contextual Info: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • • – Thirty 32K word 64K byte Sectors with Individual Write Lockout – Eight 4K word (8K byte) Sectors with Individual Write Lockout

Contextual Info: TXB0104-Q1 www.ti.com. SCES727 – JUNE 2008 4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR

SST38VF166

Abstract: JEP-137 32h 327
Contextual Info: 16 Megabit FlashBank Memory SST38VF166 Data Sheet SST38VF16616Mb x16 FlashBank + 64Kb E2 FEATURES: • • • • • • Single 2.7-3.6V Read and Write Operations Separate Memory Banks for Code or Data – Simultaneous Read and Write Capability Superior Reliability

TAA 2761 A

Abstract: TAA 2761 p 523 555H SST34HF1621 SST34HF1622 SST34HF1641 SST34HF1642
Contextual Info: 16 Mbit Concurrent SuperFlash + 2 Mbit or 4 Mbit SRAM SST34HF162x / SST34HF164x Preliminary Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection Devices

Contextual Info: 54ACT823 9-Bit D Flip-Flop General Description The ACT823 is a 9-bit buffered register. It features Clock Enable and Clear which are ideal for parity bus interfacing in high performance microprogramming systems. The ACT823 offers noninverting outputs and is fully compatible with

TRANSISTOR SUBSTITUTION DATA BOOK 1993

Abstract: 18b2 diode 18b1 diode SCDS084A Texas instruments ALS military products The Diode Data Book with Package Outlines 1993 TRANSISTOR SUBSTITUTION DATA BOOK CT 7A2 74CBTLV16 scba004
Contextual Info: CBT 5ĆV and CBTLV (3.3ĆV) Bus Switches Data Book December 1998 Logic Products General Information CBT Single Gates CBT (2 to 10 Bit) CBT Widebus CBT With Integrated Diodes CBTLV Single Gates CBTLV (2 to 10 Bit) CBTLV Widebus Application Reports Mechanical Data

Contextual Info: Features • 2.7V to 3.6V Read/Write • Access Tim e - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual W rite Lockout Two 16K Word (32K Byte) Sectors with Individual W rite Lockout Eight 4K Word (8K Byte) Sectors with Individual W rite Lockout

29f004b

Contextual Info: ADVANCE INFORMATION AM D il Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents

ST CHN t4

Abstract: a115 da hi ng sst39vf040
Contextual Info: 4 Megabit 512K x 8 Multi-Purpose Flash SST39VF040 Prelim inary Specifications FEATURES: • Organized as 512K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention

Contextual Info: Data Sheet 124065 PCMCIA Flash-5 Memory Card AUG 94 Rev A Product Features • PCMCIA Release 2.1 Compatible ■ Thin Profile — Type I Package, 3.3 mm Thick ■ Standard Memory Capacities include 256 KB, 512 KB, 1 MB, and 2 MB ■ Single 5V Power Supply for Read and Write Operations

Am29DL800B

Abstract: AM29DL800BB80
Contextual Info: P R E L IM IN A R Y AMDËI Am29DL800B 8 Megabit 1 M X 8-BII/512 K X 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from

transistor A1624

Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
Contextual Info: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: ADVANCE INFORMATION A M D ii Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: MITSUBISHI LS Is SRAM MODULE STATIC RAM 1 M X 18 18M B IT Max. Type name Access Load memory time Outward dimensions Data sheet W x H x D (mm) page (ns) MH1M18AN-85L 85 MH1M18AN-10L 100 MH1M18AN-12L 120 MH1M18AN-15L 150 MH1M18AN-85H 85 MH1M18AN-10H 100 MH1M18AN-12H

cj cl a17

Contextual Info: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector