3V DC MOTOR 20MA Search Results

Contextual Info: LOW VOLTAGE DC MOTOR CONTROLLER NJM2606/2606A The NJM2606A is integrated circuit with wide operating supply voltage range for DC motor speed control. Especially, the NJM2606A is suited for 3V or 6V DC motor control. • Absolute M axim um Ratings Ta=25°C

LA5527

Abstract: EN2071C
Contextual Info: Ordering number:EN2071C Monolithic Linear IC LA5527 Low-Voltage DC Motor Speed Controller Overview Package Dimensions Especially suited for controlling speed of a low-voltage 3V min. DC motor for cassette tape recorders, 8mm motion-picture cameras, record players.

max 32321

Abstract: LA5528N LA5528NM
Contextual Info: Ordering number:EN3232A Monolithic Linear IC LA5528N, 5528NM Low-Voltage DC Motor Speed Controllers Overview Package Dimensions Especially suited for controlling speed of a low-voltage 3V min. DC motor for cassette tape recorders, 8mm motion-picture cameras, record players.

Contextual Info: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ・High Collector Breakdown Voltage : VCEO=100V(Min.)

Contextual Info: SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ・High Collector Breakdown Voltage : VCEO=-120V(Min.)

2SB1641

Abstract: 2SD2526
Contextual Info: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ie = 3A) Low Saturation Voltage :

KTD1413

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTB1423 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at V ce=-3V , IC=-3A . • High Collector Breakdown Voltage : V c eo = _ 120V (Min.)

2SB1641

Abstract: 2SD2526
Contextual Info: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :

2SB1641

Abstract: 2SD2526
Contextual Info: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :

tip 127

Abstract: TIP127 tip 127 TRANSISTOR equivalent
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA TIP127 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VcEO=_120V(Min.)

Contextual Info: 2SB1381 SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, °ULSE MOTOR DRIVE APPLICATIONS. Unit in mm . High DC Current Gain : hFE=1500 Min. (Vc e =-3V, Ic =-2.5A) . Low Saturation Voltage : VcE(sat)=-1.5V(Max.)(Ic=-2.5A) . Complementary to 2SD2079.

Contextual Info: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.)

KTB1423

Abstract: KTD1413
Contextual Info: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.)

KTB1423

Abstract: KTD1413
Contextual Info: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P E B FEATURES S G ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ᴌHigh Collector Breakdown Voltage : VCEO=-120V (Min.)

A1046

Abstract: h10u BA 7515
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2079 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. . High DC Current Gain Unit in 10±0.3 : hFE= 2000 Min. (Vc e =3V, Ic =3A) 03.2 ±0.2 s . Low Saturation Voltage: Vc£(sat)=1.5V(Max.)(Ic “3A)

Contextual Info: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)

TRANSISTOR tip122

Abstract: TIP122 tip122 data TRANSISTOR tip122 features
Contextual Info: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)

TIP127

Abstract: tip127 data
Contextual Info: SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ᴌHigh Collector Breakdown Voltage : VCEO=-120V(Min.)

TIP122

Abstract: transistor tip 122 equivalent transistor tip122
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TIP122 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCe=3V, IC=3A. • High Collector Breakdown Voltage : VcEO=100V(Min.)

2SD2131

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2131 DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10±0.3 . High DC Current Gain #3.2 ±0.2 : hjr]7=2000(Min.) (Vc e =3V, Ic“ 3A) . Low Saturation Voltage: VpE(sat)= 1 •5V(Max.)(Ip=3A)

Contextual Info: T O SH IB A 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 • • • i 61.2 High DC Current Gain : hFE = 2000 Min. (Vce = 3V, Ic = 3A)

KTD1413

Abstract: KTB1423
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR T E C H N IC A L D A T A KTB1423 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : V ceo=_ 120V (Min.)

2SD2131

Abstract: ZENNER
Contextual Info: TO SH IBA 2SD2131 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 2 1 31 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)

Contextual Info: T O S H IB A 2SD2131 2 S D 2 1 31 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)