3TG 21 Search Results

Contextual Info: Frequently Asked Questions Rev F Conflict Minerals 1. Does Ecliptek have a Conflict Minerals Policy Statement? Ecliptek Corporation’s Conflict Minerals Policy Statement can be found on our website. 2. What minerals are considered conflict minerals? Conflict minerals, regardless of their origin, include columbite-tantalite tantalum , cassiterite (tin), wolframite

2SJ120

Abstract: 2SK416 2SJ120S 2SK416L C3S30
Contextual Info: 2S K 416 L ,2S K 416 s y U =1> N 9 V * JUMOS FET_ SILICON N-CHANNEL MOS FET *»*• «* y f >9 ñ 2SJ120 L ,2SJ120 § t =1> HIGH SPEED POW ER SWITCHING Complementary pair with 2SJ120 , 2SJ120S * > £ V T=P (DType 1. 2. Y — h ! G ate Y V -{ y \ D rain

transistor k 4212 fet

Abstract: gd 361 transistor
Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm

Contextual Info: AN6886 AN6886 5-Dot LED Driver Circuit • Description T he A N 6886 is a m onolithic in teg rated c ircu it driv in g 5L E D and is capable o f logarithm ic dB b a r graph display for input signal. It incorporates 2 rectification amp. w hich is capable o f gain

Contextual Info: Panasonic Other MOS LSIs MN65703T Low Power 8-Bit, 3-Channel CMOS D/A Converter for Image Processing • Overview Pin Assignment The MN65703T is a high-speed 8-bit, 3-channel CMOS digital-to-analog converter. Two channels use serial in­ put. It uses both a matrix cell and weighted current technol­

Contextual Info: ~T~- 1 4 C C t-0 JonU E H R 9/89 1 N 2225-K Martin Avenue, Santa Clara, CA 95050 (408 492-1400 FAX (408)492-1500 C O M P O N E N T S 5 to 500 MHz TO-8 Cascadable Amplifier High Output Level . High Efflcency . High Third Order I.P. .

cs 344C

Abstract: T178N EUPEC TT 18 N 12
Contextual Info: EUPEC T178N 52E D • 3HD3BT7 000D713 S S 1! ■ U P E C 7-2 6 - / 9 TVpenrelhe/Type range T 178 N 400 * 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDrm>VRRM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

semikron skkt 90

Abstract: semikron skkt 41 SKKT41/12E skkt 103 T25-17 SKKT 330 16E SKKT 56/12 E semikron skkt skkt41/04 semikron skkt 55
Contextual Info: S E M I K R O N INC 3tE » « 1 3 b b 71 Q D G 22 70 7 • SEKG ■ t */rsm V rrm d v / V drm dt cr 75 A V /(is 48 A Itrm s (m aximum values for continuous operation) | 95 A | 75 A | 95A Itav (sin. 180; Tease = 74 °C) V V 60 A S EM IK R D N -z s n 48 A 60 A

Contextual Info: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)

Contextual Info: EUPEC T178N 52E D • 3HD3BT7 000D713 S S 1! ■ U P E C 7 - 2 6 - /9 TVpenrelhe/Type range T 178 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDrm>VRRM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

Contextual Info: S P SPT7 7 1 0 T 8-BIT, 150 MSPS FLASH A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • Metastable Errors Reduced to 1 LSB Low Input Capacitance: 10 pF Wide Input Bandwidth: 210 MHz 150 MSPS Conversion Rate

Contextual Info: Æ T * 7 /. S C S -T H O M S O N » » [ I ü I M îq W S T D A 7 3 7 5 QUAD POWER AMPLIFIER FOR CAR RADIO ADVANCE DATA • HIGH OUTPUT POWER CAPABILITY 2 x 25W/4£2 @14.4V, 1 KHz, 10% 4 x 7W/4£i @14.4V, 1KHz, 10% 4 x 1 2W/2Q 14.4V, 1KHz, 10% ■ MINIMUM

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT _ MC-422000A32BA,422000A32FA 2M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32BA /FA series is a 2 097 152 words by 32 bits dynamic RAM module on which 4 pieces of 16M DRAM uPD 4218160 are assembled.

MH4M36ANXJ

Abstract: MH4M36ANXJ-7 MH4M36AXJ7
Contextual Info: MITSUBISHI LS Is DRAM MODULE FAST PAGE MODE DYNAMIC RAM 4M X 36 144 MBIT Max. Access Type name ; MH4M36AXJ-6 MH4M36AXJ-7 Outward dimensions Data sheet W x H x D (mm) page 107.95 x 25.3 x 8.6 3 /1 5 (ns) * - - ,

AT28C010-15FC

Abstract: AT28C010-15BM AT28C010-12BC 28C010 AT28C010-20BM At28c010-20bc
Contextual Info: AT28C010 Features • • Fast Read Access Time -120 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer • Fast Write Cycle Time Page Write Cycle Time -1 0 ms maximum 1 to 128 Byte Page Write Operation

Contextual Info: rZ J * 7 # . ST24164 ST25164 S G S -T H O M S O N H D W lllL iM S ia ig i SERIAL ACCESS 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRiTE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

CY7B991

Contextual Info: CY7B991 CY7B992 -ÿ C Y PR E SS Features • All output pair skew < 100 ps typical 250 max. • 3.75- to 80-MHz output operation • User-selectable output functions — Selectable skew to 18 ns — Inverted and non-inverted — Operation at Vi and lA input

EE-1611

Abstract: HX 711 NJU6358EX 77a1 NJU6358 NJU6358AX NJU6358C NJU6358D NJU6358HX NJU6358M
Contextual Info: N JU 6358'> «;-X W r « w A K E - u P Í I 7 ;u 9 -r i 9 n y >J S n NJU6358&#39;>U-A* l i % M m r (S S B f Ä # 4 C » M t i & $ t i t t £ iJ 7 j i ' m > n ^ i c T % * i i f i ! i g i a s & , W jÌ . ÌiM l'iT I 5 qË í-f7 1/^ A Î , T * - i » l g f f l V ? M / !/ > t f .l * 3 « |l &

Contextual Info: IBM11T2640H 2M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses - Reduced noise 18 Vss/18Vcc pins - Byte write, byte read accesses - Serial PDs • Performance: -60 -70 60ns 70ns

TLC252

Abstract: TLC252A TLC252B TLC252Y TLC25L2 TLC25L2A TLC25L2B TLC25L2Y TLC25M2 TLC25M2A
Contextual Info: TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25NI2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002F-JUNE 1983 - REVISED AUGUST 1994 D OR P PACKAGE CTOP VIEW A-Suffix Versions Offer 5-mV Vi0 B-Suffix Versions Offer 2-mV V|q

Contextual Info: ADVANCE 2, 4 MEG X 64 SDRAM DIMMs MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Utilizes 83 and 100 MHz SDRAM components

270757

Abstract: 270902 80C32 Intel
Contextual Info: INTEL CORP UP/PRPHLS bflE D • Mö2bl7S 01300=17 Sbfl M I T L 1 intJ, 8XC52/54/58 CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER Commercial/Express 87C52/80C52/80C32/87C54/80C54/87C58/80C58 •See Table 1 for Proliferation Options 6 Interrupt Sources High Performance CHMOS EPROM/

TL 2272 R

Abstract: CI 2272 AN TL 2272 Accelerometer 1000L Silicon Designs Accelerometer 1000L TLV2264 TLV2264A TLV2264AID TLV2264AIN TLV2264AIPWLE
Contextual Info: TLV2264, TLV2264A, TLV2264Y Advanced LinCMOS RAIL-TO-RAIL QUAD OPERATIONAL AMPLIFIERS SLOS132B - DECEMBER 1993 - REVISED FEBRUARY 1994 [available features Output Swing Includes Both Supply Ralls Low Noise. . . 12 nV/VHz Typ at f = 1 kHz Low Input Bias Current. . . 1 pA Typ

sq10 amplifier

Abstract: philips sq10 amplifier
Contextual Info: ,ONY I _ C X D 2 7 2 0 Q Single-Chip Digital Signal Processor for Karaoke Description The CXD2720Q is a digital signal processor LSI for Karaoke, suitable for use in LD/CD/CD-G/video CD and the like. A large capacity DRAM and AD/DA converters are