3P TRANSISTOR Search Results

transistor 2SB688

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SD718 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z Complementary to 2SB688 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications

036a transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO-3P 2SC5287 TRANSISTOR NPN 1. BASE FEATURES •High Voltage Switchihg Transistor 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5198 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z Low Collector Saturation Voltage z Good Linearity of hFE 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors KTD998 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capability z High Power Amplifier Application 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5287 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Speed Switching 2. COLLECTOR 3. EMITTER APPLICATIONS z For Switching Regulator and General Purpose Applications

TRANSISTOR C 2026

Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
Contextual Info: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3DA5200B TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capacity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3CA1943 TO – 3P TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z General Purpose Switching and Amplification 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: Darlington Transistors /V / / y A -/<\ // " V ¿/ Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Electrical Characteristics Absolute Maximum Ratings VcEO Type No. VcBO VcEO [V] [V ] 100 100 200 200 100 100 200 200 100 100 200

Contextual Info: Darlington Transistors Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Absolute Maximum Ratings Electrica Characteristics VcEO VcBO VcEO V ebo lc Ib Pi Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [°C] [ ”C ] 2SD1022 100 100 1023

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: MG6331 1455 audio output TRANSISTOR NPN npn transistor SEMELAB LE17 MG9411 "NPN Transistor" MG6331-R
Contextual Info: SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R • TO-3P Plastic Package • Complimentary PNP – MG9411 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package

PRSS0003ZA-A

Abstract: 3p transistor PRSS0004ZE-A TO3PFMV
Contextual Info: PM519 Package name PVC Polyvinyl chloride Treatment Antistatic Magazine material Maximum storage No. Transistor/Magazine Packing form TO-3P PRSS0004ZE-A TO-3P, TO-3PV 30 Non dry pack TO-3PFM PRSS0003ZA-A TO-3PFM, TO-3PFMV 30 Non dry pack Unit : mm +2 -2

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: "PNP Transistor" MG9411 1455 properties of transistor pnp 9099 SEMELAB LE17 MG6331
Contextual Info: SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R • TO-3P Plastic Package • Complimentary NPN – MG6331 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package

Contextual Info: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E

Contextual Info: HIGH SPEED SWITCHING TRANSISTORS FX series FTO-220 ITO-220 TO-220 ITO-3P MTO-3L MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VRM VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 3 1

Contextual Info: High Speed Switching Transistors . ITO-220 TO-220 IT0-3P MT0-3P Bipolar transistors NPN Absolute Maximum Ratings Type No. Electrical Characteristics VcBO VcEO V ebo Ic Ib Pr Tstg Tj V CEO (sus) (min) [V ] [V ] [V ] [A] [A ] [W ] re i rc ] [V ] h FE (min)

Transistor 126

Abstract: transistor GR 345
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-3P 3 leads Thru-hole Fully Isolated Plastic Package Package Outline, Packaging and Handling Information Continental Device India Limited Data Sheet Page 1 of 5 TO-3P Package, Packaging and Handling

s1854

Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Contextual Info: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #

2SA1093

Abstract: 2SC2563
Contextual Info: Inchange Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION

2SC2563

Abstract: 2SA1093
Contextual Info: SavantIC Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION

2sc3306

Abstract: 7 pin ic switching DC DC converter 5v to 400V
Contextual Info: Inchange Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Collector-emitter sustaining voltageVCEO(sus)=400V(Min) ・Fast switching times APPLICATIONS ・Switching regulator and high voltage

2SD718

Abstract: 2sd718 amplifier AMPLIFIER 2SD718 2SB688
Contextual Info: Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SB688 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage

2SC4531

Contextual Info: Product Specification www.jmnic.com 2SC4531 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High speed ・High voltage ・Low saturation voltage ・Bult-in damper type APPLICATIONS ・Horizontal deflection output applications PINNING

2SD2386

Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION