3N1909 Search Results
3N1909 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 3N190-91 |
|
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier | Original | 28.29KB | 2 |
3N1909 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3N190
Abstract: 3N190-91 3N191 X3N190-91
|
Original |
3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oage -55oC 125oC 3N190-91 3N191 X3N190-91 | |
3N190
Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506
|
Original |
3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oC 125oC 3N188 3N190-91 3N191 X3N190-91 C2506 | |
2N19KContextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Amp RMS SCRa Major Raring* and Characteristic] 'TIHM!) 'TIAVI »TC 7O- 70* 70- SB1 82' 85- ITSU «50Hi 9GE 1,000' 965 1,000- 905 1,000* |2t |
Original |
3N1909 2N19K 2N1793 2NI908 2N2033 2N1804 2N1807 TC-126 TC-26 2N19K | |
3N190Contextual Info: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CO RP O RA TIO N 3N190/3N191 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1) |
OCR Scan |
3N190/3N191 3N190-3N191 3N190, -500HA, 300ns; 3N190 | |
3N188Contextual Info: _| _ COIOOIC Dual P-Channel Enhancement Mode MOSFET . _ - _ _ CORPORATION 3N190/3N191 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1) |
OCR Scan |
3N190/3N191 3N190-3N191 3N190, -500nA, -500mA 3N188 |