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3C12
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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56.12KB |
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3C1200
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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59.1KB |
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3C1200
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
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129.78KB |
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3C1200
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RPM Micro
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3.0A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier |
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47.84KB |
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3C1200A
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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59.1KB |
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BZW03C12
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode with voltage range 6.8 to 270 V, power dissipation 6.0 W at 25°C, low leakage current, high reliability, and DO-201AD package.Axial leaded silicon Zener diode with a voltage range of 6.8 to 270 V, power dissipation of 6.0 W at 25°C, low leakage current, and high reliability in a DO-201AD package. |
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AZ23C12
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JCET Group
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Dual zener diode in common anode configuration, SOT-23 package, 300 mW power dissipation, with tight voltage matching between diodes and low dynamic impedance across a wide range of zener voltages.Dual zener diode in common anode configuration, SOT-23 package, 300 mW power dissipation, Zener voltage range 2.7V to 41V, dynamic impedance up to 90 ohms, leakage current as low as 0.1 uA, operating junction temperature -55 to +150 °C.Dual zener diode in common anode configuration with 300 mW power dissipation, available in SOT-23 package, featuring tight voltage matching with delta Vz ≤5% and low dynamic impedance down to 8 ohms. |
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BZG03C120
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SMA/DO-214AC package with 3.0W power dissipation, operating voltage range 3.9 to 400V, low leakage current, and junction temperature range from -55 to +150°C.Surface mount silicon Zener diode BZG03C3V9 with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode BZG03C3V9 with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode with a power dissipation of 3.0W, voltage range from 3.9 to 400V, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode BZG03C3V9 with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and SMA/DO-214AC package.Surface mount silicon Zener diode BZG03C3V9 with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode BZG03C3V9 with a nominal Zener voltage of 3.9 V, maximum DC power dissipation of 3.0 W, and operating voltage range from 3.9 to 400 V, designed for high reliability and low leakage current applications. |
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BZG03C12
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SMA/DO-214AC package with 3.0W power dissipation, operating voltage range 3.9 to 400V, low leakage current, and junction temperature range from -55 to +150°C. |
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DZ23C12
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JCET Group
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Dual zener diode in SOT-23 package with common cathode configuration, 300 mW power dissipation, zener voltage range 2.7V to 51V, and low dynamic impedance down to 8 ohms at 5 mA.Dual zener diode in SOT-23 package with common cathode configuration, 300 mW power dissipation, zener voltages from 2.7 V to 51 V, and low dynamic impedance for voltage regulation applications. |
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BZW03C120
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode with voltage range 6.8 to 270 V, power dissipation 6.0 W at 25°C, low leakage current, high reliability, and DO-201AD package.Axial leaded silicon Zener diode with a voltage range of 6.8 to 270 V, power dissipation of 6.0 W at 25°C, low leakage current, and high reliability in a DO-201AD package.Axial leaded silicon Zener diode with a voltage range of 6.8 to 270 V, power dissipation up to 6.0 W, low leakage current, and high reliability in a DO-201AD package. |
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BZW03C12
