3C SOT363 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors  BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 B2 PCM : 300 mW(Tamb=25℃) E2 Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -50

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 PCM : 300mW(Ta=25℃) B2 E2 Collector current ICM : -200mA Collector-base voltage V(BR)CBO : -50V

BC857S

Contextual Info: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic.

3c sot363

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components BC857S PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic. UL Flammability

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components BC857S PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic. UL Flammability

sot-363 marking 3C

Abstract: lf 10193
Contextual Info: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code

sot-363 marking 3C

Abstract: maxim MARKING CODE 21 71179
Contextual Info: S ii 400_ Weiv Product Vishay Siliconix N-Channel 20-V D-S M OSFET PRODUCT SUMMARY r DS(on) (£2) b(A) 0.150 e V GS = 4.5 V 1.7 0.235 e V GS = 2.5 V 1.3 VDS(V) 20 SOT-363 SC-70 (6-LEADS) Marking Code XX £ Lot Traceability and Date Code — Part# Code

sot-363 MARKING

Abstract: sot-363 marking 3C
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x • • • BC857S Multi-chip Transistor Ultra-Small Surface Mount Package

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • x x • • • BC857S PNP Plastic-Encapsulate Halogen free available upon request by adding suffix "-HF"

Si1912EDH

Contextual Info: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated

SII907

Abstract: 223S
Contextual Info: _ S ii 907 Vishay Siliconix New Product Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s r D S (o n) ( ß ) Id (A) 0.650 @ VGS = -4 .5 V ± 0 .5 6 (V ) -1 2 0.925 @ VGS = -2 .5 V ± 0 .4 7 1.310 @ V qq = -1 .8

sot363 marking qs

Contextual Info: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package

LD 25 V

Abstract: SM410
Contextual Info: SÌ1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) Id (A) * D S (o n ) ( ^ ) 20 • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package 0.070 @ V GS = 4.5 V

Contextual Info: TP0205A/AD Vishay Siliconix New Product P-Channel 20-V D-S MOSFETs, Low-Threshold PRODUCT SUMMARY VDS(V) -2 0 r D S (o n ) ( ß ) lD (mA) 3.8 @ V q s = -4 -5 V -1 8 0 5.0 @ V Gs = -2 .5 V -1 0 0 FEATURES BENEFITS APPLICATIONS • • • • • • •

zener 751

Abstract: SMF12A-GS08 GSOT08C-GS08 SOD-923 zener GSOT36C-GS08 SMF33A-GS08 DO215AA 751-1397-1-ND 751-1415-1-ND SMF6V5A-GS08
Contextual Info: Transient Voltage Suppressors Cont. ESD TVS Fig. 1 SC-74 Dimensions in mm 1.55 6 5 4 1.70 1 2 3 6C A2 5A C3 4C 3 1 2 2.40 2.70 1 3 2 1 B. A. 2 1.35 2.20 Fig. 5 SOT-23 1.70 1 3 2 1.70 Breakdown Voltage VBR Min. Nom. Max. 5.32 6.0 6.4 6.2 13.3 13.3 5.32

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

Contextual Info: 1 W h ß tHEWLETT* miti» P AC KA R D 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • • • • • • Ultra-Miniature Package Single 5 V Supply (29 mA)

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W