3B3 DIODE Search Results

ML5415N

Contextual Info: b lE D • bEMTfiST M IT S U B IS H I Q O lHbD l DISC R ETE 3b3 ■ M IT S MITSUBISHI LASER DIODES ML5XX5 SERIES SC FOR OPTICAL INFORMATION SYSTEMS DESCRIPTION FEATURES ML5XX5 is a h ig h -p o w e r AIGaAs semiconductor • High power (35m W CW, 45mW pulse)

FIT4 diode

Contextual Info: ADC0831/ADC0832/ADC0834/ADC0838 bSDHEM [3073^03 3b3 • NSC2 5flE D NATL SEMICOND LINEAR 7 = 5 H O -O B S3 National mm Semiconductor ADC0831/ ADC0832/ADC0834 and ADC0838 8-Bit Serial I/O A/D Converters with Multiplexer Options General Description The ADC0831 series are 8-bit successive approximation

DP07C

Abstract: Transistor RKU SEA5 bft 5f g1 NCN20 transistor 1Ht 4n35 equivalent
Contextual Info: 7 Ô 1 1 0 7 3 0 0 1 7 3 1 2 3b3 • RKü RCV229ATF/2-BA Rockwell Integrated V.22 bis/V.42 bis Data/Fax/Voice Modem Device Set with Telephone Answering Machine TAM) Support INTRODUCTION FEATURES The merging of the persona) computer and telephone is the first step in the evolution of the PC to a full-fledged

2N3425 MOTOROLA

Abstract: 2N3425 MD2369
Contextual Info: MOTOROLA SC XSTRS/R F R ating E D | fe,3fc,7aSM 0Qflt,3B3 T | 1 2 Sym bol V a lu e Collector-Em itter Volta g e VcE O 15 Vdc Collector-Em itter Volta g e V C ER 20 Vdc Collector-B ase Volta g e VCBO 40 Vdc Em itter-Base V olta g e VEBO 5.0 Total Device D issip a tion @ T/\ - 25°C

zener 3B2

Abstract: 3b3 zener diode 3B3 diode zener B51 DAM3B30
Contextual Info: SURGE SUPPRESSOR DIODE DAM3B OUTLINE DRAWING Unit in mm inch φ 3.6 (0.14) • High transient reverse power capability suitable for protecting automobile electronic components etc. • Diffused-junction. Resin encapsulated. 27CA Type mark (Red) 6 (0.24) φ 0.8

zener B51

Abstract: DAM3B27 DAM3B10 DAM3B11 DAM3B12 DAM3B13 DAM3B15 DAM3B16 DAM3B18 DAM3B20
Contextual Info: SURGE SUPPRESSOR DIODE DAM3B OUTLINE DRAWING Unit in mm inch φ 3.6 (0.14) • High transient reverse power capability suitable for protecting automobile electronic components etc. • Diffused-junction. Resin encapsulated. 27CA Type mark (Red) 6 (0.24) φ 0.8

DAM3B10

Abstract: DAM3B11 DAM3B12 DAM3B13 DAM3B15 DAM3B16 DAM3B18 DAM3B20 DAM3B22 zener B51
Contextual Info: SURGE SUPPRESSOR DIODE DAM3B OUTLINE DRAWING Unit in mm inch φ 3.6 (0.14) • High transient reverse power capability suitable for protecting automobile electronic components etc. • Diffused-junction. Resin encapsulated. 27CA Type mark (Red) 6 (0.24) φ 0.8

3b3 zener diode

Abstract: zener B51 zener diode b51 DAM3B16 DAM3B18 3B 334 DAM3B10 DAM3B11 DAM3B12 DAM3B13
Contextual Info: SURGE SUPPRESSOR DIODE DAM3B OUTLINE DRAWING 長 27CA 26MIN. 1.02 58MIN. (2.28) • 大きな逆方向損失が許容できます。 （自動車電装品の保護用等） • 拡散接合形レジンモールド構造 φ 0.8 (0.03) Cathode band (Red) 26MIN.

ECG3100

Abstract: lc 3101 led ECG3102 ECG3103 ECG3105 transistor p58 ECG3101 ECG3104 transistor p26 ecg 100 transistor
Contextual Info: Infrared Detector D io d e s ECG Type Description ECG3033 Infrared PIN Detector Diode Reverse Voltage V r IV Max. Dark Current ID »A) Min Light Current ILI/jA) Power Dissipation PD (mW) Rise Time tr (nS) Typ Detection Angle Typ Detection Wavelength (nm)

C16T10Q

Abstract: 0x118 l57 104 C16T09Q F1G6 3B3 diode
Contextual Info: SCHOTTKY BARRIER DIODE 17.7 a / 9 0 ~ C16T09Q CL6T10Q ioov SQUARE-PAK FEA TURES Similar to TO-263AB Case, Surface Mount Device ° Dual Diodes - Cathode Common « Low Forward Voltage Drop ° Low Power Loss, High Efficiency » High Surge Capability « 30 Volts through 100 Volts Types Available

A15F

Abstract: a15a
Contextual Info: H A RR IS S E n i C O N D S E CT OR m bûE ] • 43 02 E7 1 QQ SD Bl l 427 H H A S A1RA A1RF H a r r is SEMICONDUCTOR M » ff y M M ff ff 3A, 50V - 100V Diodes December 1993 Package Features AL-3 • Hlgh-Temperature Metallurglcally Bonded, No Com­ pression Contacts as Found In Diode-Constructed

marking v3

Contextual Info: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor ¡SANYO, SVC383 AM Low Voltage Electronic Tuning Applications Features • Twin type varactor diode for low-voltage AM electronic tuning use. . • Low voltage 6.5V . • High Q. • Possible to offer the SVC383 devices in a tape reel

3b3 zener diode

Abstract: DIODE ZZ160 ZZ36 P200A ZZ160 ZZ16 ZZ-36 ZZ160S ZZ16S P68A
Contextual Info: ZZ16.ZZ160, ZZ16S.ZZ160S Bidirectional Zener Diodes Features: - High energy absorption in both directions - Extremely fast response - Especially designed to protect telephone circuits and other voltage-sensitive devices including semiconductors <N 5|*

5B1 zener diode

Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

smd 5b1

Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

ZENER B18

Abstract: b16 zener zener b27 zener 5B6 5B1 IR zener 5B1 zener 6b8 zener 3b9 zener B13 zener b30
Contextual Info: MM3Z2B4 . MM3B47 200 mW - 2% MM3Z2B4 . MM3B47 (200 mW - 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-08-22 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung

Contextual Info: MM3Z2B4 . MM3Z47B 200 mW - 2% MM3Z2B4 . MM3Z47B (200 mW - 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-08-22 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

u1620

Abstract: motorola u1620 rectifier u1620 U1620 diode u1620 application note MURF1620CT motorola u1620 diode AN1040
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M U RF1620CT SW IT C H M O D E Power Rectifiers M otorola Preferred Device D esigned for u se in switching power supplies, inverters and a s free wheeling diodes, these state-of-the-art devices have the following features:

ps817

Abstract: PS8170 PI3B162244 PI3B16244
Contextual Info: PI3B16244 Ω PI3B162244 25Ω

16244

Abstract: ps817 PI3B162244 PI3B16244 4a3 diode 3B2 diode
Contextual Info: PI3B16244 Ω PI3B162244 25Ω

48-PIN

Abstract: PI5C162244 PI5C16244
Contextual Info: PI5C16244/162244 16-BIT BUS SWITCH BUFFER PI5C16244 Ω PI5C162244 25Ω

zener 6c2

Abstract: zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener
Contextual Info: GLZ2.0 A (B)(D) THRU GLZ56(A)(B)(C) SURFACE MOUNT ZENER DIODES MINI-MELF SOD-80/DO-213AA Planar Die construction 500mV Power Dissipationie construction Ieally Sulted for Automated Assembly Processes 0.146(3.70) 0.130(3.30) 0.063(1.60) 0.055(1.40) 0.020(0.50)

DC1277

Abstract: DC1279F-T DC1276 DC1270 Gunn Diode e band DC1277G-T DC1278F DC1279C DC1279F 018ph diode
Contextual Info: 37bâ£22 DOlflS'îO TSD « P L S B Si GEC P L E S S E Y S E M I C O N D U C T O R S D S3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP Tha introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs