3B TRANSISTOR Search Results

UC3843bn diagram

Abstract: ic uc3845bn UC3845BN USED CIRCUIT UC3845BN internal block diagram UC3842BN uc3844bn UC3842B uc3843bn UC3845BN NE555 PWM 500khz
Contextual Info: UC2842B/3B/4B/5B UC3842B/3B/4B/5B HIGH PERFORMANCE CURRENT MODE PWM CONTROLLER . . . . . . . TRIMMED OSCILLATOR FOR PRECISE FREQUENCY CONTROL OSCILLATOR FREQUENCY GUARANTEED AT 250kHz CURRENT MODE OPERATION TO 500kHz AUTOMATIC FEED FORWARD COMPENSATION

KA3842B

Abstract: "SMPS Controller" SMPS CIRCUIT DIAGRAM 12v 5v SMPS CIRCUIT block diagram ka3842b equivalent KA3843B KA3845B mosfet 4b KA3844B smps circuit diagram
Contextual Info: KA3842B/3B/4B/5B SMPS CONTROLLER CURRENT-MODE PWM CONTROLLERS The KA3842B/3B/4B/5B are fixed frequency current-mode PWM controller. They are specially designed for Off - Line and DC-to-DC converter applications with minimal external components. These integrated circuits feature a trimmed

BD249C equivalent

Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125

BU406D

Abstract: S-60W bu407d
Contextual Info: MOTORGLA s c XSTRS/R F 15E D | fc,3b?2S4 0004011 2 | ^33"// MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406,D BU407,D NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV's and CRT's. • •

BD807

Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
Contextual Info: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Contextual Info: BC856 BC857 BC858 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M a rk in g BC856 = 3D BC856A - 3A BC856B - 3B BC857 = 3H BC857A = 3E BC857B - 3F BC857C - 3G BC858 - 3M RC858A = 3J BC858B - 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m

Contextual Info: COIL CMBT918 VHF/UHF TRANSISTOR N-P-N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 I 0.38 1 1 3 1 I I1 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 « COLLECTOR _1.02 0.89" 2.00 0.60 57«f 1.80 ABSOLUTE MAXIMUM RATINGS

IGBT Designers Manual

Abstract: dc control using ir2110 and mosfet IR2110 application note igbt series bridge ir2110 ir2110 application DATA SHEET OF IGBT IR2110 IR2110 maximum frequency MOSFET designer manual
Contextual Info: Design Tips DT 92-3B Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs & IGBTs Introduction Dynamic Operation Inherently neither the MOSFET nor the IGBT requires negative bias on the gate. Setting the gate voltage to zero at turn-off insures proper

BFT97

Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Contextual Info: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages

8C328

Abstract: BC327 motorola
Contextual Info: MOTOROLA SC XSTR S/ R F 12E D | fc,3b?2S4 DOflSfiMS 5 | M A X I M U M R A T IN G S Symbol BC327 BC328 Unit Collector-Emitter Voltage VCEO 45 25 Vdc Collector-Base Voltage VcBO 50 30 Emitter-Base Voltage Vebo 5.0 Vdc Collector Current — Continuous !C 800

2N6430

Abstract: 2N6430 MOTOROLA
Contextual Info: MOTORCLA SC X S TR S /R 12E O § fc,3b?aS4 QOäbMSl fi | F r-yi-m 2N6430 2N6431 CASE 22-03, STYLE 1 TO-18 TO-206AA MAXIMUM RATINGS Rating Symbol 2N6430 2N6431 Unit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage Vcb O 200 300 Vdc Emitter-Base Voltage

BDB01A

Abstract: TO-226AE BDB01B BDB01C BDB01D
Contextual Info: motorgla sc xstrs / r 1 SE D I f b 3b?2 SM OOflS^OT 5 | M A X IM U M RATINGS Sym b o l BDB BDB BDB BDB 01A 01B 01C 01D Rating Unit Collector-Emitter Voltage VcEO 45 60 80 100 Vdc Collector-Base Voltage VCES 45 60 80 100 Vdc Emitter-Base Voltage vebo 5.0 Vdc

Contextual Info: MO TOROLA SC XSTRS/R F 12E 0 I t>3b?2SM OGflbSQS T | MAXIM UM RATINGS R atin g U n it Sym bol V alue C ollector-E m itter Voltage VCEO 12 Vdc C ollector-Base Voltage VCBO 12 Vdc Em itter-Base Voltage VEBO 5 Vdc ic 200 Am p Total Device D issipation @ T a - 25°C

dhvqfn14

Abstract: 74AHCT08D NXP 74AHC08 74AHC08BQ 74AHC08D 74AHC08PW 74AHCT08 74AHCT08D 74AHCT08PW JESD22-A114E
Contextual Info: 74AHC08; 74AHCT08 NXP Semiconductors Quad 2-input AND gate 4. Functional diagram 1 & 3 & 6 2 1 1A 2 1B 4 2A 5 2B 9 3A 10 3B 12 4A 13 4B 1Y 3 4 2Y 6 5 3Y 8 9 A Y & 8 B 10 4Y mna221 11 12 mna222 & 11 13 mna223 Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram one gate

Contextual Info: TPC8402 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type π−MOSVI/U−MOSII TPC8402 Lithium Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications l l l l Unit: mm Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

TPC8405

Contextual Info: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)

tpc8406

Abstract: RX4M50FM60 receiver datasheet TPC8406-H TPC8406H
Contextual Info: TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type P-Channel／N-Channel Ultra-High-Speed U-MOSIII TPC8406-H High Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications CCFL Inverter Applications

TPCP8301

Contextual Info: TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCP8301 ○ Lithium Ion Battery Applications ○ Notebook PC Applications Unit: mm ○ Portable Equipment Applications 0.33±0.05 0.05 M A • Lead (Pb)-free • Small footprint due to small and thin package

TPCP8302

Contextual Info: TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCP8302 ○ Lithium Ion Battery Applications ○ Notebook PC Applications Unit: mm ○ Portable Equipment Applications 0.33±0.05 0.05 M A • Lead (Pb)-free • Small footprint due to small and thin package

TPC8404

Contextual Info: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)

tpc8406

Abstract: TPC8406-H
Contextual Info: TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type P-Channel/N-Channel Ultra-High-Speed U-MOSIII TPC8406-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

Contextual Info: TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC8206 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)

Contextual Info: TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPCS8302 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)

TPCS8303

Contextual Info: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)