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Catalog Datasheet	Type	Document Tags	PDF
7n80 Abstract: Al3m 7N80 TO220 3VD450800YL Contextual Info: 3VD450800YL 3VD450800YL 高压MOSFET芯片描述 ¾ 3VD450800YL为采用硅外延工艺制造的N沟道增强型800V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	3VD450800YL 3VD450800YL 3VD450800YLN 800VMOS O-220, 340mX506m O-220 800VVGS 10VID 7n80 Al3m 7N80 TO220	PDF
Contextual Info: 3VD450800YL 3VD450800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD450800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.	Original	3VD450800YL 3VD450800YL O-220	PDF

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7n80

Abstract: Al3m 7N80 TO220 3VD450800YL
Contextual Info: 3VD450800YL 3VD450800YL 高压MOSFET芯片描述 ¾ 3VD450800YL为采用硅外延工艺制造的N沟道增强型800V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；

Original

3VD450800YL 3VD450800YL 3VD450800YLN 800VMOS O-220, 340mX506m O-220 800VVGS 10VID 7n80 Al3m 7N80 TO220

PDF

Contextual Info: 3VD450800YL 3VD450800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD450800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.

Original

3VD450800YL 3VD450800YL O-220

PDF