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    39V6471 Search Results

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    MIT

    MIT MGFC39V6471

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    Bristol Electronics MGFC39V6471 2
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    39V6471 Datasheets Context Search

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    fet 544 a

    Abstract: MGFC39V6471
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V6471 , o t p ,o d u c « 0 " u 6 . 4 - 7 .2 G H z BAND 8 W IN TERNALLY MATCHED GaAs FET DESCRIPTION The 39V6471 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		39V6471 MGFC39V6471 fet 544 a PDF