39 MARKING SOT223 Search Results

Q62702-F1246

Abstract: Q62702-F1303
Contextual Info: NPN Silicon High-Voltage Transistors BFN 36 BFN 38 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 37, BFN 39 PNP ● Type Marking

Q62702-F1304

Abstract: Q62702-F1305 39 marking in sot223 package
Contextual Info: PNP Silicon High-Voltage Transistors BFN 37 BFN 39 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 36, BFN 38 NPN ● Type Marking

DXT2012

Abstract: DXT2012P5 DXT2012P5-13 sot223 code r1k
Contextual Info: A Product Line of Diodes Incorporated DXT2012P5 ADVANCE INFORMATION 60V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

S304NZ

Abstract: PBSS304PZ PBSS304NZ SC-73
Contextual Info: PBSS304NZ 60 V, 5.2 A NPN low VCEsat BISS transistor Rev. 01 — 18 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

DS32023

Abstract: DXTN07100BP5 DXTN07100BP5-13 dtn7100b
Contextual Info: A Product Line of Diodes Incorporated DXTN07100BP5 ADVANCE INFORMATION 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT690B

Abstract: DXT690BP5 DXT690BP5-13
Contextual Info: A Product Line of Diodes Incorporated DXT690BP5 45V NPN HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 45V IC = 3A; ICM = 6A

DXT2014P5-13

Abstract: DXT2014 DXT2014P5
Contextual Info: A Product Line of Diodes Incorporated DXT2014P5 140V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = -140V

DXT2011

Abstract: DXT2011P5 DXT2011P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2011P5 ADVANCE INFORMATION 100V NPN LOW SAT MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT790A

Abstract: DXT790AP5-13 DXT790AP5 dxt790
Contextual Info: A Product Line of Diodes Incorporated DXT790AP5 40V PNP HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 40V IC = 3A; ICM = 6A

DXT2013

Abstract: DXT2013P5 DXT2013P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2013P5 ADVANCE INFORMATION 100V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

DXT2010

Abstract: DXT2010P5 DXT2010P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2010P5 ADVANCE INFORMATION 60V NPN MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

DTP3200B

Abstract: DXTP03200BP5 DXTP03200BP5-13
Contextual Info: A Product Line of Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

FR4 dielectric constant 4.6

Abstract: C5 MARKING TRANSISTOR SiGe POWER TRANSISTOR THN6701B R6701 transistor 1608 L28 marking
Contextual Info: Preliminary Specification THN6701B NPN SiGe RF POWER TRANSISTOR Unit in mm SOT223 □ Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High power gain 7.0 3.5 □ Features MAG = 15 dB @ VCE = 6 V, IC = 400 mA, f = 465 MHz - High power 1 POUT = 35 dBm 3W @ VCE = 6 V, ICQ = 50 mA, f = 465 MHz

ZXTP2012GTA

Abstract: sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP
Contextual Info: ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

BD373

Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
Contextual Info: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800

BCP52-16

Abstract: BFN38 BFN39 Bec10
Contextual Info: BFN39 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies 4 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary types: BFN38 NPN Type BFN39 Marking

BCP52-16

Abstract: BFN38 BFN39
Contextual Info: BFN39 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 4 and switching power supplies 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary types: BFN38 NPN • Pb-free (RoHS compliant) package 1)

Contextual Info: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

BFN38

Abstract: BFN39 VPS05163 BFN36 BFN37
Contextual Info: BFN37, BFN39 PNP Silicon High-Voltage Transistors
Suitabled for video output stages in TV sets and 4 switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage 3
Complementary types: BFN36, BFN38 NPN 2 1 Type Marking

BFN36

Abstract: BFN37 BFN38 BFN39 VPS05163
Contextual Info: BFN37, BFN39 PNP Silicon High-Voltage Transistors
Suitabled for video output stages in TV sets and 4 switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage 3
Complementary types: BFN36, BFN38 NPN 2 1 Type Marking

motorola p1f

Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
Contextual Info: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05