382 SOT23 Search Results

BAW56

Abstract: 7M marking aw56 lp "sot23 marking motorola"
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTOÏ ì>F|b3b?ESS 0Q3ñSmn 1 63 67 25 5 MO TO R O L A SC DIODES/OPTO 34C 382^6 D T '— SOT23 (continued) DEVICE NO. BAW56 SMALL-SIGNAL DUAL SWITCHING DIODES (COMMON ANODE) TOP VIEW A I I • Common anode dual diode specially designed for general

Tektronix 2712

Abstract: 0805C104KAT2A
Contextual Info: Application Note 1817 November 2012 13.56 MHz, Class-D Half Bridge, RF Generator with DRF1400 Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com INTRODUCTION The DRF1400 is a MOSFET Half Bridge HB Hybrid Device which has been optimized for efficiency and reduced

circuit diagram of 13.56MHz RF Generator

Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
Contextual Info: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET

27.12Mhz

Abstract: PRF-1150 oscillator 27.12mhz circuit diagram of 13.56MHz RF Generator 600w schematic diagram switching power supply zener diode c24 5t 5.1V DIODE ZENER Zener LED ramp generator 555 rf toroid design considerations
Contextual Info: Application Note 1813 September 2010 27.12 MHz, CLASS-E, 600W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver

TO-18 amps pnp transistor

Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06
Contextual Info: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A JAN2N3250A JAN2N3251A JANTX2N3250A JANTX2N3251A JANTXV2N3250 JANTXV2N3251

Philips MARKING CODE

Abstract: Philips Logic Marking Code marking code 10 sot23 BP317 PSSI3120CA
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

ST 9340

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

PD-1503

Abstract: pd1503 h24 sot23-6 MS-026C PBGA272 MO-153-AB PD1002 MO-194AF NA-256 PD1704
Contextual Info: SSOP SSOP H20 H24 TSSOP L8 L20 A56 L14 L24 L16 L28 Q16 Q24 Q20 Q28 TFBGA NC64 SOIC W8 S24 PDIP W14 P20 S28 V56 A48 QSOP SOIC W16 H28 TSSOP S16 V48 BQSOP K56 B48 K48 B40 SOT23 T5 C6 T6 NA256 PBGA MSOP ZB56 PLCC J44 NA272 LFBGA NB64 NB96 NB114 U8 QFN J32 B80

crt monitor circuit diagram

Abstract: 2N3906 2SB0709 PMBT3906
Contextual Info: F75385M ±1oC Accuracy Temperature Sensor IC Datasheet Release Date: July, 2006 Revision: V0.21P F75385 F75385 Datasheet Revision History Version Date Page 0.20P March, 2006 - 0.21P July, 2006 10 Revision History Original Release Version Modify VT1/VT2 High Limit and VT1 THERM Limit Default Value.

MSB003

Abstract: PBR941B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PINNING SOT23 FEATURES • Small size PIN • Low noise

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PINNING SOT23 FEATURES • Small size PIN DESCRIPTION • Low noise

smd transistor 203

Abstract: MSD230 SC-75 SC-89 smd transistor 493
Contextual Info: Philips Semiconductors’ family of resistor-equipped transistors offers a cost-effective solution for next-generation consumer products. These small-signal devices integrate up to two bias resistors Resistor-equipped transistors – diffused with the transistor in a single die – to save board space

induction cooker circuit diagram

Abstract: TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker
Contextual Info: 2010-9 SYSTEM CATALOG Home Appliances h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Induction Rice Cookers Refrigerators Air Conditioners Dishwashers Automatic Washing Machines Characteristics of Motor Control Devices . 3

Contextual Info: SOLDER PADS OUTLINE inch SOT-23-3L 29 .017 MIN (0.42 MIN .246 MIN. (2.5 MIN.) .055 MIN. (1.40 MIN.) ref. 1.00 .043 REF. (1.1 REF.) .349 MAX. (8.86 MAX.) .528 MAX. (13.4 MAX.) .049 REF. (1.25 REF.) .039 MIN. (1.0 MIN.) .031 MIN. (0.80 MIN.) .202 MAX. (5.13) MAX.

A 798 transistor

Abstract: 382 sot23
Contextual Info: Central Semiconductor Corp. CMPT5179 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for low

IST3032

Abstract: JCG320160A01-02 MTG-32240 WG160160A IST3026 JCG320160A01-01/Y1 IST3226
Contextual Info: RAiO RA8806 Evalution-Kit User Guide Preliminary Version 1.0 January 19, 2009 RAiO Technology Inc. Copyright RAiO Technology Inc. 2008 RAiO TECHNOLOGY INC. 1/25 www.raio.com.tw RA8806 Preliminary Version 1.0 Chapter Evalution Kit User Guide Contains Page

Contextual Info: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP64-06 Silicon PIN diode Product specification Supersedes data of 2000 Mar 22 2001 Feb 27 Philips Semiconductors Product specification Silicon PIN diode BAP64-06 FEATURES PINNING • High voltage, current controlled

Contextual Info: Product specification IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

TEMD2100

Abstract: 843V
Contextual Info: TE MIC TEMD2100 S e m i c o n d u c t o r s Silicon PIN Photodiode Description TEMD2100 is a high speed silicon PIN photodiode in a miniature SOT-23 package for surface mounting on printed boards. Its flat package provides an extra wide viewing angle. Due to its waterclear epoxy the device is sensitive to

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 PBSS4240T 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor Product specification Supersedes data of 1999 Aug 04 2001 Jun 11 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A