380 A 15 ZL 3 Search Results

Contextual Info: C YM 1831V33 1YPRESS 64K x 32 3.3V Static RAM Module ule is constructed from two 64K x 16 SRAMs in SOJ packages mounted on an epoxy laminate substrate. Four chip selects are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combination

M57716L

Contextual Info: MITSUBISHI RF POWER MODULE M57716L 360-380MHz, 12.5V, 13W, DIGITAL MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 2 60±0.5 7.25±0.8 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 φ 0.45±0.15 PIN: 1 Pin : RF INPUT 2 VBB : BASE BIAS SUPPLY

digital mobile radio

Abstract: M68749 5040T 380-400MHz
Contextual Info: MITSUBISHI RF POWER MODULE M68749 380-400MHz, 12.5V, 5W, DIGITAL MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 60±0.5 7.25±0.8 51.5±0.5 2 3 4 1 5 2-R2±0.5 1 2 3 4 5 6 6 φ 0.45±0.15 12±1 PIN: 1 Pin : RF INPUT 2 VBB : BASE BIAS SUPPLY

MAX4818

Abstract: MAX4818ETE MAX4819 MAX4819ETE
Contextual Info: 19-3915; Rev 1; 1/07 High-Bandwidth T1/E1 Dual-SPDT Switches/ 4:1 Muxes The MAX4818/MAX4819 high-bandwidth, low-on-resistance analog dual SPDT switches/4:1 multiplexers are designed to serve as integrated T1/E1 protection switches for 1+1 and N+1 line-card redundancy applications. Each MAX4818/MAX4819 replaces four

Switch Normally close

Abstract: MAX4818 MAX4818ETE MAX4819 MAX4819ETE
Contextual Info: 19-3915; Rev 0; 1/06 High-Bandwidth T1/E1 Dual-SPDT Switches/ 4:1 Muxes The MAX4818/MAX4819 high-bandwidth, low-on-resistance analog dual SPDT switches/4:1 multiplexers are designed to serve as integrated T1/E1 protection switches for 1+1 and N+1 line-card redundancy applications. Each MAX4818/MAX4819 replaces four

RA55H3847M

Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to

LC2 contactor

Abstract: LC2-D12 LC2-D09 contactor d09 pp d115 D09P7V D115 D150 LC2-D40 LC2-D150
Contextual Info: References TeSys contactors 5 5 Reversing contactors for motor control up to 75 kW at 400 V, in category AC-3 Horizontally mounted, pre-assembled Control circuit: a.c., d.c. or low consumption 810369 3-pole reversing contactors for connection by screw clamp terminals or connectors

LRD 03

Abstract: MO350 25X1 M57704SL mo 350
Contextual Info: M ITSU B ISH I HF PO W ER M ODULE M57704SL 360-380MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM Il— —Il— —il— PIN : © P in : RF IN PU T DVCCl : 1st. DC SUPPLY ® V C C 2 : 2nd. DC SUPPLY @ V C C 3 : 3rd. DC SUPPLY ®P0 : RF O U TPU T ® G N D : FIN

RA60H3847M1

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to

Igg22

Contextual Info: < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H3847M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 378- to 470-MHz range.

Contextual Info: Philips Semiconductors Preliminary specification CATV am plifier module BGD814 FEATURES PINNING -SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2 and 3 • Silicon nitride passivation common

8X16

Abstract: DS12 ZL1000
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL ZL SERIES 1 0 5 t High ripple current, Low impedance. ♦FEA TU R ES • Enabled high ripple current by a reduction of Impedance at high frequency range. •Load Life :1 0 5 t; 1000~5000hours. ♦ s p e c if ic a t io n s

DIN 6784 c1

Abstract: BCR108T BFR380T E6327 SC75
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

BGD812

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

RA13H3340M

Abstract: RA13H3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to

Contextual Info: ZL MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL SERIES 105oC High ripple current, Low impedance. FEATURES • Enabled high ripple current by a reduction of impedance at high frequency range. • Load Life : 105°C 1000~5000hours. • RoHS compliance. SPECIFICATIONS

RA55H3847M

Abstract: Pout-120
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to

RA07H3340M

Abstract: RA07H3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz

RA07N3340M

Abstract: RA07N3340M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to

RA13H3340M

Abstract: RA13H3340M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to

50WV

Abstract: YXA Series
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL ZL SERIES 105˚C High ripple current, Low impedance. ♦FEATURES • Enabled high ripple current by a reduction of impedance at high frequency range. • Load Life : 105˚C 1000~5000hours. ♦SPECIFICATIONS Items

RA07H3340M-101

Abstract: RA07H3340M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ RF TRANSISTOR 2.5 GHZ s parameter Germanium Power Diodes GERMANIUM TRANSISTOR RF NPN POWER TRANSISTOR 2.5 GHZ germanium transistors NPN BFP740 BGA420 E6327
Contextual Info: BFP740 3 NPN Silicon Germanium RF Transistor 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 up to 10 GHz and more 1 • Ideal for CDMA and WLAN applications VPS05605 • Outstanding noise figure F = 0.5 dB at 1.8 GHz

RA07N3340M

Abstract: RA07N3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to