380 A 15 ZL 3 Search Results
380 A 15 ZL 3 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| RJHSEE380A8 |
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Modular Jack - Right Angle, Input Output Connectors 8P8C, Right Angle, With shield, without LEDs.. | |||
| RJHSEG380A1 |
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Modular Jack - Right Angle, Input Output Connectors 8P8C, Right Angle, With shield, without LEDs.. | |||
| RJHSE5380A3 |
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Modular Jacks, Input Output Connectors, 8P8C, Right angle, Shield, With LEDs, 3 Port | |||
| RJHSEE380A2 |
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Modular Jack - Right Angle, Input Output Connectors 8P8C, Right Angle, With shield, without LEDs.. | |||
| RJHSE3380A1 |
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Modular Jack - Verticals, Input Output Connectors 8P8C, Vertical, With shield, without LEDs.. |
380 A 15 ZL 3 Price and Stock
Abracon Corporation ASD3-8.000MHZ-LC-TStandard Clock Oscillators Crystal Oscillator 2520 4-SMD 8MHz A+/-50ppm -40AC ~ 85AC CMOS 1.8V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ASD3-8.000MHZ-LC-T |
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Get Quote | ||||||||
380 A 15 ZL 3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: C YM 1831V33 1YPRESS 64K x 32 3.3V Static RAM Module ule is constructed from two 64K x 16 SRAMs in SOJ packages mounted on an epoxy laminate substrate. Four chip selects are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combination |
OCR Scan |
1831V33 CYM1831V33 64-pin CYM1821, CYM1831, CYM1836, CYM1841) | |
digital mobile radio
Abstract: M68749 5040T 380-400MHz
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M68749 380-400MHz, 10pcs/Lot) 380MHz 400MHz digital mobile radio M68749 5040T 380-400MHz | |
Switch Normally close
Abstract: MAX4818 MAX4818ETE MAX4819 MAX4819ETE
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MAX4818/MAX4819 MAX4818/MAX4819 Switch Normally close MAX4818 MAX4818ETE MAX4819 MAX4819ETE | |
RA60H3847M1Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to |
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RA60H3847M1 378-470MHz RA60H3847M1 60-watt 470-MHz | |
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Contextual Info: Philips Semiconductors Preliminary specification CATV am plifier module BGD814 FEATURES PINNING -SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2 and 3 • Silicon nitride passivation common |
OCR Scan |
BGD814 -SOT115J OT115J MSA319 | |
8X16
Abstract: DS12 ZL1000
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OCR Scan |
5000hours. 120Hz) ZL150M ZL1000M 8X16 DS12 ZL1000 | |
DIN 6784 c1
Abstract: BCR108T BFR380T E6327 SC75
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BFR380T VPS05996 DIN 6784 c1 BCR108T BFR380T E6327 SC75 | |
BGD812Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier |
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M3D252 BGD812 OT115J SCA73 613518/04/pp12 BGD812 | |
RA55H3847M
Abstract: 310A tube RF MOSFET MODULE
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RA55H3847M 380-470MHz RA55H3847M 55-watt 470-MHz 310A tube RF MOSFET MODULE | |
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Contextual Info: ZL MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL SERIES 105oC High ripple current, Low impedance. FEATURES • Enabled high ripple current by a reduction of impedance at high frequency range. • Load Life : 105°C 1000~5000hours. • RoHS compliance. SPECIFICATIONS |
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105oC 10005000hours. 120Hz) rat82 | |
RA55H3847M
Abstract: Pout-120
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RA55H3847M 380-470MHz RA55H3847M 55-watt 470-MHz Pout-120 | |
RA07H3340M
Abstract: RA07H3340M-01
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RA07H3340M 330-400MHz RA07H3340M 400-MHz RA07H3340M-01 | |
RA07N3340M
Abstract: RA07N3340M-101
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RA07N3340M 330-400MHz RA07N3340M 400-MHz RA07N3340M-101 | |
RA13H3340M
Abstract: RA13H3340M-101
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RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz RA13H3340M-101 | |
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RA07H3340M-101
Abstract: RA07H3340M
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RA07H3340M 330-400MHz RA07H3340M 400-MHz RA07H3340M-101 | |
RF NPN POWER TRANSISTOR 3 GHZ
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ RF TRANSISTOR 2.5 GHZ s parameter Germanium Power Diodes GERMANIUM TRANSISTOR RF NPN POWER TRANSISTOR 2.5 GHZ germanium transistors NPN BFP740 BGA420 E6327
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BFP740 VPS05605 OT343 RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR C 10-12 GHZ RF TRANSISTOR 2.5 GHZ s parameter Germanium Power Diodes GERMANIUM TRANSISTOR RF NPN POWER TRANSISTOR 2.5 GHZ germanium transistors NPN BFP740 BGA420 E6327 | |
RA07N3340M
Abstract: RA07N3340M-01
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RA07N3340M 330-400MHz RA07N3340M 400-MHz RA07N3340M-01 | |
RA07M3340M
Abstract: RA07M3340M-101
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RA07M3340M 330-400MHz RA07M3340M 400-MHz RA07M3340M-101 | |
hatfield attenuator
Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01
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RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz hatfield attenuator RF MOSFET MODULE RA13H3340M-01 RA13H3340M-E01 | |
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Contextual Info: ZL MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL SERIES 105℃ High ripple current, Low impedance. ◆FEATURES ・Enabled high ripple current by a reduction of impedance at high frequency range. ・Load Life : 105℃ 1000~5000 hours. ・RoHS compliance. |
Original |
120Hz | |
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Contextual Info: ZL MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ZL SERIES 105℃ High ripple current, Low impedance. ◆FEATURES ・Enabled high ripple current by a reduction of impedance at high frequency range. ・Load Life : 105℃ 1000~5000 hours. ・RoHS compliance. |
Original |
120Hzï 100kHz | |
RA07N3340M
Abstract: RA07N3340M-01 RA07N3340M-E01
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RA07N3340M 330-400MHz RA07N3340M 400-MHz RA07N3340M-01 RA07N3340M-E01 | |
RA07M3340M
Abstract: RA07M3340M-01
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RA07M3340M 330-400MHz RA07M3340M 400-MHz RA07M3340M-01 | |
BGD812
Abstract: DIN45004B
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M3D252 BGD812 OT115J 613518/04/pp10 BGD812 DIN45004B | |