380 A 15 ZL 3 Search Results

Contextual Info: C YM 1831V33 1YPRESS 64K x 32 3.3V Static RAM Module ule is constructed from two 64K x 16 SRAMs in SOJ packages mounted on an epoxy laminate substrate. Four chip selects are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combination

251C

Contextual Info: MITSUBISHI RF POWER MODULE M57721L 350-400MHZ, 12.5V, 7W, FM PORTABLE RADIO O U T LIN E DR A W IN G Dimensions in mm B LO CK DIAGRAM 45 + 0.5 42 ± 1 2 -R 1 .6 + D.5 ¥ m Ò +1 •€ H r- — II— 4> 0.4 + 0.2 9+ 1 9+1 5+1 PIN : 8.5 ± 1 © P in : RF IN PU T

M57716L

Contextual Info: MITSUBISHI RF POWER MODULE M57716L 360-380MHz, 12.5V, 13W, DIGITAL MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 2 60±0.5 7.25±0.8 3 4 51.5±0.5 1 5 2-R2±0.5 1 2 3 4 5 6 6 φ 0.45±0.15 PIN: 1 Pin : RF INPUT 2 VBB : BASE BIAS SUPPLY

Contextual Info: SPECIFICATION Part No. : TI.15.3113 Product Name : 433MHz ISM Band Dipole Antenna Feature : SMA M Connector Hinge design for optimal reception RoHS Compliant SPE-12-8-021/A/ZL Page 1 of 1 I. Introduction TI.15 series is high performance 433MHz Omni-directional dipole antenna. This SMA

Contextual Info: SPECIFICATION Part No. : TI.15.3113 Product Name : 433MHz ISM Band Dipole Antenna Feature : SMA M Connector Hinge design for optimal reception RoHS Compliant SPE-12-8-021/A/ZL Page 1 of 1 I. Introduction TI.15 series is high performance 433MHz Omni-directional dipole antenna. This SMA

digital mobile radio

Abstract: M68749 5040T 380-400MHz
Contextual Info: MITSUBISHI RF POWER MODULE M68749 380-400MHz, 12.5V, 5W, DIGITAL MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±0.5 3±0.3 60±0.5 7.25±0.8 51.5±0.5 2 3 4 1 5 2-R2±0.5 1 2 3 4 5 6 6 φ 0.45±0.15 12±1 PIN: 1 Pin : RF INPUT 2 VBB : BASE BIAS SUPPLY

MAX4818

Abstract: MAX4818ETE MAX4819 MAX4819ETE
Contextual Info: 19-3915; Rev 1; 1/07 High-Bandwidth T1/E1 Dual-SPDT Switches/ 4:1 Muxes The MAX4818/MAX4819 high-bandwidth, low-on-resistance analog dual SPDT switches/4:1 multiplexers are designed to serve as integrated T1/E1 protection switches for 1+1 and N+1 line-card redundancy applications. Each MAX4818/MAX4819 replaces four

Switch Normally close

Abstract: MAX4818 MAX4818ETE MAX4819 MAX4819ETE
Contextual Info: 19-3915; Rev 0; 1/06 High-Bandwidth T1/E1 Dual-SPDT Switches/ 4:1 Muxes The MAX4818/MAX4819 high-bandwidth, low-on-resistance analog dual SPDT switches/4:1 multiplexers are designed to serve as integrated T1/E1 protection switches for 1+1 and N+1 line-card redundancy applications. Each MAX4818/MAX4819 replaces four

Contextual Info: MITSUBISHI RF POWER MODULE M57716L 360-380MHZ, 12.5V, 13W, DIGITAL MOBILE RADIO OUTLINE DRAWING D im ensions in mm BLOCK DIAGRAM QD PIN: 3 Pin : RF IN PU T ©VBB : BASE BIAS S U P PLY (3)VCC1: 1st. DC S U P PLY © V C C 2 : 2nd. DC S U P PLY ©PO : RF O U TP U T

RA55H3847M

Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to

LC2 contactor

Abstract: LC2-D12 LC2-D09 contactor d09 pp d115 D09P7V D115 D150 LC2-D40 LC2-D150
Contextual Info: References TeSys contactors 5 5 Reversing contactors for motor control up to 75 kW at 400 V, in category AC-3 Horizontally mounted, pre-assembled Control circuit: a.c., d.c. or low consumption 810369 3-pole reversing contactors for connection by screw clamp terminals or connectors

LRD 03

Abstract: MO350 25X1 M57704SL mo 350
Contextual Info: M ITSU B ISH I HF PO W ER M ODULE M57704SL 360-380MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM Il— —Il— —il— PIN : © P in : RF IN PU T DVCCl : 1st. DC SUPPLY ® V C C 2 : 2nd. DC SUPPLY @ V C C 3 : 3rd. DC SUPPLY ®P0 : RF O U TPU T ® G N D : FIN

transistor marking c1 ghz

Abstract: transistor marking c3 ghz
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

BFR380L3

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: MITSUBISHI RF POWER MODULE M68749 380-400MHz, 12.5V, 5W, DIGITAL MOBILE RADIO BLOCK DIAGRAM PIN: 0 P in : RF INPUT V B B : BASE BIAS SUPPLY C D Vcci: 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY ©Po : RF OUTPUT © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc =25°C

TRANSISTOR MARKING NK

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor 1107

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR380L3 Linear Low Noise Silicon Bipolar RF Transistor • High current capability and low noise figure for wide dynamic range • Collector design supports supply voltage up to 5V • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz

201T2

Abstract: M57721 M57721L 350-400MHZ 40uJ
Contextual Info: MITSUBISHI RF POWER MODULE M57721L 350-400MHZ, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45 + 0.5 42 ± 1 2 -R 1 .6 ± 0 .5 — • ¥ _ ■€ D © — IH - o +1 — Il— © -, (D (¿0.4 ± 0.2 5 ±1 9± 1 PIN : 5 ± 1 8.5 ±1

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

Contextual Info: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to 470-MHz range. The battery can be connected directly to the drain of the

Contextual Info: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to 470-MHz range. The battery can be connected directly to the drain of the