36B 75 Search Results

QA-2000

Abstract: TC-36B
Contextual Info: rEHEPATOPHbIM TETPOfl r C '3 6 B l E T R 'K reHepaTopHbm TeTpofl T C -36B npeflHa3Ha>HeH p j\9 \ ycuneHMfl moihhoctm b ycn/iM Tenax c p acnp eflen eH - T h e T C -36B tetrode is designed for pow er amplifi­ cation in distributed-gain am plifiers and single-sideband

Contextual Info: GS88218/36B B/D -xxxV 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Functional Description n es ig N ot R ec om m en d ed fo Applications The GS88218/36B(B/D)-xxxV is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address

Contextual Info: GS88118/32/36B T/D -xxxV 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Functional Description n es ig SCD Pipelined Reads The GS88118/32/36B(T/D)-xxxV is a SCD (Single Cycle Deselect) pipelined synchronous SRAM. DCD (Dual Cycle

gs8162z18bgd

Contextual Info: Preliminary GS8162Z18/36B B/D 119- & 165-Bump BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

tip36

Abstract: TIP36A TIP36B TIP36C
Contextual Info: Inchange Semiconductor Product Specification TIP36/36A/36B/36C Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type TIP35/35A/35B/35C ・DC current gain hFE=25 Min @IC=-1.5A APPLICATIONS ・Designed for use in general purpose

GS881Z18BT-150V

Abstract: GS881Z18BT-200V GS881Z18BT-250V GS881Z32BT-200V GS881Z32BT-250V
Contextual Info: GS881Z18/32/36B T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • User-configurable Pipeline and Flow Through mode • NBT (No Bus Turn Around) functionality allows zero wait

Contextual Info: Preliminary GS8162Z18/36B B/D 119- & 165-Bump BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

GS8162ZV18B

Abstract: GS8162ZV36B
Contextual Info: Preliminary GS8162ZV18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

TIP35

Abstract: TIP35A TO-3P* tip35c TIP35B TIP35C
Contextual Info: SavantIC Semiconductor Product Specification TIP35/35A/35B/35C Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type TIP36/36A/36B/36C ·DC current gain hFE=25 Min @IC=1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.

Contextual Info: GS881Z18/32/36B T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • User-configurable Pipeline and Flow Through mode • NBT (No Bus Turn Around) functionality allows zero wait

Contextual Info: GS882Z18/36B B/D -xxxV 119-bump and 165-bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

tip35

Abstract: tip35c equivalent TIP35C TIP35A TIP35B
Contextual Info: Inchange Semiconductor Product Specification TIP35/35A/35B/35C Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type TIP36/36A/36B/36C ・DC current gain hFE=25 Min @IC=1.5A APPLICATIONS ・Designed for use in general purpose

36B1

Abstract: 3.6B1
Contextual Info: rEHEPATOPHbm TETPOfl TETRODE M o l^ H b lii 36B-1 pe>KHM e re H e p a T O p H b IM n p e flH a 3 H a H e H flr m u jn p o K o n o n o c H o ro T e T p O fl paóoTbi ry-36B-i ry b y c M /ie m /m mou hoctm b flnana30He na c T O T flo 250 M r q B p aflM O T e X H M H e C K M X

Contextual Info: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

GS882Z18BB-150V

Abstract: GS882Z18BB-200V GS882Z18BB-250V
Contextual Info: GS882Z18/36B B/D -xxxV 119-bump and 165-bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: GS882Z18/36B B/D -xxxV 119-bump and 165-bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability

PSMN004-36B

Abstract: PSMN004-36P
Contextual Info: PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 — 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PSMN004-36P in SOT78 TO-220AB

Contextual Info: Preliminary GS816218/36B B/D 119- & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs Features 300 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation

Contextual Info: HEWLETT-PACKARD/ blE D CHPNTS • 4 4 4 7 56 4 D 0 1 0 1 2 1 36b ■ IH P A MSA-0835, -0836 MODAMP Cascadabie Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers That HEW LETT 1 "KM PACKARD 35 micro-X Package1 Features • Usable Gain to 6.0 GHz

U552

Abstract: u552 c
Contextual Info: V ^SUB iSH , LSis MH1M36BUJ-75,-85 FAST PAGE MODE 37748736-BIT 1048576-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION The M H 1M 36B U J is 1048576 w ord x 3 6 - bit dynamic RAM. PIN CONFIGURATION (TOP VIEW ) [Both side] This consists o f eight industry standard 1M x 4 dynamic

GS882Z36b

Abstract: a1-66c
Contextual Info: Preliminary GS882Z18/36B-11/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 8Mb Pipelined and Flow Through 100 MHz–66 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 512K x 18 and 256K x 36 configurations

36B2

Abstract: diode 36b2 36b2 diode PSMN004-36B 3.6b2
Contextual Info: PSMN004-36B N-channel TrenchMOS SiliconMAX logic level FET Rev. 02 — 1 March 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

GS88218BB-150V

Abstract: GS88218BB-200V GS88218BB-250V
Contextual Info: GS88218/36B B/D -xxxV 119- and 165-Bump BGA Commercial Temp Industrial Temp 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan