362-6 TRANSISTOR Search Results

Q62702-F395

Abstract: bf363 Q62702-F396 BF 362 BF362
Contextual Info: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 for UHF TV tuners BF 362 and BF 363 are NPN silicon planar RF transistors in a plastic package similarto T 0 119 (50 B3 DIN 41867 . BF 362 is particularly suitable for gain-controlled input stages, and

2n6080

Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF
Contextual Info: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily

BF363

Contextual Info: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 fo r U H F T V tuners BF 3 6 2 and BF 3 6 3 are NPN silicon planar RF transistors in a plastic package similarto T 0 119

Contextual Info: Ordering num ber:EN 572D SA\YO No.572D 2SA1016,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t

118-136 mhz

Abstract: sd1222-6 transistor rf vhf
Contextual Info: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor

transistor j304

Abstract: thomson microwave transistor
Contextual Info: S G S— THOMSON OSC D | 7 = ^ 2 3 ? OüGQlt.0 7 | ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION

THOMSON-CSF, RF TRANSISTOR

Abstract: Thomson-CSF SD1479 Thomson-CSF amplifier Solid State Microwave thomson-csf vhf
Contextual Info: S G S—THOMSON Q4C D " | _ 7 T a T a 3 7 GGaOGfll Q SOLID STATE MICROWAVE 7 7 -// C e SD1479 THOMSON-CSF COMPONENTS CORPORATION Montgomery vil le, PA 18936 • 215 362-8500 ■ TWX 510-6 61-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1479 is a 12.5 volt epitaxial silicon NPN planar

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PZ Microcontroller identical to LM4F132H5QC D ATA SHE E T D S -T M 4C 1237 H6 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 362 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

transistor a102

Abstract: A102 TRANSISTOR a102 npn A102 SD1418 Solid State Microwave Thomson-CSF 001MF60MILSQ
Contextual Info: S-T H O M SO N ~DMC D t 7=12=123 7 OOaOOt.3 T J ~ D 6 3 SOLID STATE MICROWAVE WM - 7^ D ?.?-/ / -^ ' SD 1418 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryville, PA 18936 • {215} 362-8500 * TWX 510-661-7299 800 MHz C O M M U N IC A T IO N S T RA N SIST O R

ferroxcube ferrite beads

Abstract: N15W N25W thomson microwave transistor 2N5946 N5946 TWX510 THOMSON-CSF electrolytic vk 200 N30W
Contextual Info: □4C D I 7 ^ 5 3 7 ' S G S-THOMSON T- ss - t t 00000^5 0 l > SSM S O L ID ST A T E M IC R O W A V E 2 N 5 9 4 6 ; !r THQMSON-CSF COMPONENTS CORPORATION I;Montgomeryvilie, PA 18936• 215 362-8500■ TWX510-661-7299 UHF C O M M U N IC A T IO N S T RA N SISTO R

SD1080-2

Contextual Info: s G S-THOMSON S O L I D QMC D | ?^2ci23? OQaDDlfl 4 I ” ' T ~ ? 3 ~ 6 i i r~ S T A T E M I C R O W A V E ^ 7 " ^ SD 1080-2 ! THOMSON-CSF COMPONENTS CORPORATION ; MontgomeryviHe, PA.18936» {215 362-8500" TWX 510-661-7299 : \ , '• v- 7.5 VOLT VHF C O M M U N IC A T IO N S T RA N SIST O R

RAYTHEON

Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize

25 uF capacitor

Abstract: RAYTHEON RMPA61800
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT

RAYTHEON

Abstract: RMPA1955-99 GPRS Diagram
Contextual Info: RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Tri-band GSM/GPRS Power Amplifier PA Module which uses Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip

gsm signal amplifier circuit diagram

Abstract: GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 RMPA1955-99 BW-100
Contextual Info:
 Raytheon Commercial Electronics RMPA1955-99 3V Dual-Band GSM Power Amplifier Module Description The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

RF TRANSISTOR 1.5 GHZ dual gate

Abstract: RMPA61800 CuMoCu
Contextual Info: RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT

SOT 363 marking code 62 low noise

Abstract: bf362 bc238c
Contextual Info: ,TELEFUNKEN ELECTRONIC file D fiRBOO^b Q00S201 2 • ALÛÛ ■ r - s t - z . } BF 362 • BF 363 TTEHLtHFODKlGStiMelectronic Creative Technologies Silicon NPN RF Planar Transistors Applications: BF 362: Gain controlled UHF/VHF Input stages 8F 363: Self oscillating mixer stages

RAYTHEON

Abstract: RMPA61810 25 uF capacitor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize

smd transistor 2f

Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.

9452

Abstract: RAYTHEON RMPA61800 amplifier TRANSISTOR 12 GHZ
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier The Raytheon RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to

Contextual Info: DISCONTINUED PLEASE USE ZTX790A PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT790A ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX.

FXT790A

Abstract: TO-1 amps pnp transistor
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT790A ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V

Contextual Info: Not Recommended for New Design Please Use ZTX790A PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT790A ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.