NCE65T360F
|
|
NCEPOWER
|
NCE65T360D, NCE65T360, NCE65T360F are 650V N-channel super junction power MOSFETs with typical RDS(ON) of 290 mΩ, ID of 11.5A, low gate charge, and 100% avalanche tested, suitable for PFC, SMPS and industrial power applications. |
Original |
PDF
|
|
|
|
AK60R360F
|
|
AK Semiconductor
|
N-Channel Super Junction Power MOSFET with 600 V drain-source voltage, 360 mΩ maximum on-resistance, 11 A continuous drain current, low gate charge, and TO-263 or TO-220 package options. |
Original |
PDF
|
|
|
|
AK70T360F
|
|
AK Semiconductor
|
N-Channel Super Junction Power MOSFET with 700 V drain-source voltage, 11.5 A continuous drain current, 330 mΩ typical on-resistance, and ultra-low gate charge for high-efficiency power conversion applications. |
Original |
PDF
|
|
|
|
AK65R360F
|
|
AK Semiconductor
|
N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 360 mΩ maximum on-resistance, 11 A continuous drain current, and low gate charge for high-efficiency power conversion applications. |
Original |
PDF
|
|
|
|
AK65T360F
|
|
AK Semiconductor
|
N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 290 mΩ typical on-resistance, 11.5 A continuous drain current, and ultra-low gate charge for high-efficiency power conversion applications. |
Original |
PDF
|
|
|
|
NCE70T360F
|
|
NCEPOWER
|
NCE70T360D, NCE70T360, NCE70T360F are 700V N-channel super junction power MOSFETs with low on-resistance of 330mΩ typical, low gate charge, and high avalanche capability, suitable for PFC, SMPS, and industrial power applications. |
Original |
PDF
|
|
|
NCE65T360F
