36 TIR Search Results

CHN 044 VW

Abstract: NB18
Contextual Info: CMOS SyncBiFIFO with Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2 IDT723624 IDT723634 IDT723644 • Port B bus sizing ot 36-bits long word , 18-bits (word) and 9-bits (byte) • Big- or Little-Endian tormat tor word and byte bus sizes • Master Reset clears data and contigures FIFO, Partial

Contextual Info: Rev 0. GMM7361000BS/BSG-60/70/80 GMM7361000BSS/BSGS-60/70/80 GoldStar 1,048,576 WORDS x 36 BIT GOLDSTAR ELECTRON CO., LTD. GMM7362000BS/BSG-60/70/80 2,097,152 WORDS x 36 BIT/CMOS DYNAMIC RAM MODULE Description Features The GMM7361000BSG/BSGS is a 1M x 36 bits dy­

SH 6770

Contextual Info: MET'f* JE/ OCT 15 1992 MC-428000A36 8,388,608 X 36-Bit Dynamic CMOS RAM Module W NEC Electronics Inc. Prelim inary Information _ September Description Pin Configuration The M C-428000A 36 is a fast-page dynam ic RAM mod­ ule organized as 8,388,608 words by 36 bits and de­

MB87030

Abstract: sdb01 MB87031 EXBF fpt-1 MB87035
Contextual Info: MB87035/36 SCSI Protocol Controller SPC for use with Differential or Single-end Drivers Edition 1.0 September 1989 GENERAL DESCRIPTION The MB87035/36 SCSI Protocol Controller (SPC) Is a CMOS LSI circuit specifically designed to control a Small Computer Systems Interface (SCSI). The MB87035/36 is an enhanced version of Fujitsu’s

TC55WD836FF

Abstract: TC55WD836FF-133
Contextual Info: TC55WD836FF-133#-150#-167 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36

TC55WD836FF

Abstract: TC55WD836FF-133
Contextual Info: TC55WD836FF-133#-150#-167 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: REVISIONS DESCRIPTION REV /c;n nan DATE KYLE 7 -2 5 -9 7 ¿ 0 ^ 8 /5 /9 7 REVISED o n APPROVED *.001 190-36, UNS-2B |A |.0 0 3 TIR "OSSP PLUG 051±-001 RECOMMENDED MOUNTING HOLE C'SINK 90° TO 0 - -200 MIN THD .190-36, UN5-2A ACROSS FLATS ELECTRICAL Nominal Impedance Ohms

Contextual Info: Integrated Device Technology, Inc. 128K x 36, 256K x 18, 3.3V SYNCHRONOUS SRAMS WITH ZBT FEATURE, 2.5V or 3.3V I/O, BURST COUNTER, AND PIPELINED OUTPUTS FEATURES: • 128K x 36, 256K x 18 memory configurations • Supports high performance system speed - 200 MHz

G80E 1A

Abstract: g80e mt 6223 65-28
Contextual Info: ASSMANN Socket Strips Electronic C o m p o n en ts Socket strips, pitch 1.27 mm H t* Single row D oub l« row nu, ‘•"H « £ £ : IDS » w |l “ Is sf » L J i.» No. of contacts Plating Partito. AWRL160/G36 36 Gold AWRL160/Z36 tin 36 3 a jo -1 -* , J f Tir

Contextual Info: GMM7361000SG/SGS-60/70/80 1,048,576 W O R D S x 36 BIT GMM7362000SG-60/70/80 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 W O R D Sx 36 BIT CM O S DYNA M IC RAM M O DULE Description Features The G M M 7361000SG /SG S is a 1M x 36 b its d y ­ n am ic RAM M O D U LE w hich is assem b led 8

Contextual Info: IBM043610TLAA IBM041810TLAA P relim inary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.45 Micron CMOS Technology • Synchronous Flow-Thru Mode Of Operation with Self-Timed Late Write • Dual Differential Input and Output Clocks.

Contextual Info: i l 1992 MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module LlMJ W NEC Electronics Inc. Preliminary Information August 1992 _ Description Pin Configuration The MC-424000A36 is a fast-page dynamic RAM mod­ ule organized as 4,194,304 words by 36 bits and de­

ic nn 5198 k

Abstract: nn 5198 k mcm54400
Contextual Info: M OTOROLA SEMICONDUCTOR -TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory

Contextual Info: Technical Specification IQ64xxxQTXxxx 18-135V 1.8-48V 100W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter A 36 @ 36 TC 8V O 8Q 1. 01 IN V 35 64 -1 18 IQ UT N RS -G The InQor quarter-brick converter series is composed

t7775

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD464318L, 464336L 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT HSTL INTERFACE Description The /¿PD464318L is a 262,144 words by 18 bits, and the /¿PD464336L is a 131,072 words by 36 bits synchronous

Contextual Info: SEC NEC Electronics Inc. MC-424512A36BH/FH 524,288 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-42512A36BH/FH is a fast-page dynamic RAM module organized as 524,288 words by 36 bits and designed to o perate from a single + 5-volt power sup­

Contextual Info: NEC NEC Electronics Inc. MC-424512A36BH/FH 524,288 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-42512A36BH/FH is a fast-page dynamic RAM module organized as 524,288 words by 36 bits and designed to operate from a single + 5-volt power sup­

Contextual Info: GoldStar GOLDSTAR ELECTRON CO., LTD. Description GMM7364000BS/BSG-60/70/80 4,194,304 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Features The GMM7364000BS/BSG is a 4M x36 Bits dy­ • 72 pins Single In-Line Package GMM736XXXXBS: Tin-Lead Plate namic RAM MODULE which is assembled 36

Contextual Info: Technical Specification IQ64xxxQTXxxx 18-135V 1.8-48V 100W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter A 36 @ UT 8V O 1. 01 V 35 64 -1 18 IQ IN 8Q TC 36 N RS -G The InQor quarter-brick converter series is composed

MC-421000A36

Contextual Info: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is afast-p age dynamic RAM module organized as 1,048,576 words by 36 bits and designed to o perate from a single + 5-volt power supply. Ad­

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT /¿PD464518L, 464536L 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT LVTTL INTERFACE Description The ,uPD464518L is a 262,144 words by 18 bits, and the ,uPD464536L is a 131,072 words by 36 bits synchronous

424256 memory

Abstract: 424256
Contextual Info: SEC MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Prelim inary Information April 1992 Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single +5-volt power

Contextual Info: TOSHIBA TC55VL836FF-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36 bits. NtRAMTM(no-turnaround) SRAM offers high bandwidth by eliminating dead cycles during