35N 60 Search Results

band pass filter mcl pbp 30

Abstract: ISO 8734 filter mcl 0 f6 diode PBP-35N MCL 03 mcl pbp 140
Contextual Info: Plug-In Band Pass Filter 50Ω, PBP-35N+ PBP-35N 30 to 40 MHz Maximum Ratings Features Operating Temperature Storage Temperature RF Power Input • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.77" X 0.40" X 0.40" -40oC to 85oC -55oC to 100oC

"Silicon Controlled Rectifier"

Abstract: cs220 CS220-35M CS220-35N
Contextual Info: Central CS220-35M CS220-35N TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 35 AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS220-35M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications

0485400000

Abstract: bsk 45 BSK 20 030352 42 AP 0380760000 0130120000 bsm5 SAK35N hp 530
Contextual Info: SAK 10 SAK 16 SAK 35N SAK 35 SAK 70 SAK 95N Single Level Single Level Single Level Single Level Single Level Single Level 0110060000* 0443760000* 0271060000* 0380660000* 0550660000 0110080000* 0443780000* 0271080000* 0380680000* 0550620000 0110020000 0110070000

D-32457

Contextual Info: Technical Data Metal Switches Series D D-U1 PW Description Article number 6041113006 Operating symbol 23 – 24 11 – 12 Operating diagram 0mm 17N 2 8mm ON 35N OFF Tolerances Operating point: ± 0.25mm; Actuating force: ± 10% Electrical data Rated insulation voltage

PBP-35N

Contextual Info: Plug-In Band Pass Filter Elliptic Response PBP-35N+ Typical Performance Curves Insertion Loss 10 Insertion Loss (dB) 20 30 40 50 60 70 80 90 100 100 200 300 400 500 600 700 800 900 1000 700 800 900 1000 Frequency (MHz) Return Loss 3 Return Loss (dB) 6 9 12

SXBP-35N

Abstract: SXBP SXBP-35N sxbp-35n
Contextual Info: Surface Mount Band Pass Filter SXBP-35N+ Typical Performance Curves INSERTION LOSS vs. TEMPERATURE 10 -40°C @ Input Power = 0 dBm 20 +25°C @ Input Power = 0 dBm 30 +85°C @ Input Power = 0 dBm dB 40 50 60 70 80 90 100 100 200 300 400 500 600 700 800 Frequency (MHz)

SXBP-35N

Contextual Info: Surface Mount Band Pass Filter SXBP-35N+ Typical Performance Data MHz 0.5 10 11 12 13 14 15 16 17 18 19 20 21 25 30 35 36 37 39 40 45 50 55 60 65 70 75 80 90 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200

Contextual Info: PRELIMINARY |U|IC=RON 1 MEG X MT8LS1 32 32 SRAM M O D U LE 1 MEG X 32 SRAM SRAM MODULE 3.3V WITH OUTPUT ENABLE FEATURES • • • • • • OPTIONS 72-Pin SIMM SE-4 72-Pin ZIP (SG-4) MARKING • T im in g 15ns access 20n s access 25n s access 35n s access

WDU35

Contextual Info: wdu« WDU 16N Feed Through Terminals O <g> wdu35 WDU 35N q I> * S in g le Lev el S in g le Lev el - - A W o S in g le L e v e l Jl / S in g le L e v e l Terminal Block Selection Data Available Options Version Part No. Part No. Part No. Part No. Beige Wemid

SAK35

Contextual Info: SAK 10 SAK 16 SAK 35N SAK 35 SAK 70 SAK 95N S in g le L e v e l S in g le L e v e l S in g le L e v e l S in g le L e v e l S in g le L e v e l S in g le L e v e l C_> t_r C_> T_r t_ r 0110060000* 0443760000* 0271060000* 0380660000* 0110080000* 0443780000*

Contextual Info: MICRON 32K SRAM MT5C2568 X 8 SRAM 32Kx 8 SRAM • H ig h sp eed : 1 0 ,1 2 ,1 5 , 20, 25 a n d 35n s PIN ASSIGNMENT Top View • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • S in g le + 5 V ± 1 0 % p o w er su p p ly

appa 17

Abstract: 33R0 APPA 37
Contextual Info: I True RMS Измерение переменного тока 0,1 А … 350 А 35N/35R , 0 А … 600 А (33/33R), 0,1 А … 1000 А (37) Измерение переменного напряжения 0,1 В … 600 В Измерение сопротивления 1 Ом … 40 кОм

sgsp531

Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92

GG 06

Abstract: VN35010
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35

2N2222B

Abstract: MM1758 transistor A345 transistor A346 2SC103A BSY37 LDS206 2N3981 2N269 FK3300
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

MTH8P20

Abstract: MTH13N50 MTH7N50 MTH30N20 MTH25N10 MTH15N20 MTH35N15 MTH20N15 MTH40N06 MTP2P45
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

2N5735

Abstract: bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

sv0300

Abstract: BYX71-600 BYX71-350 byx71 700 BYX71 DO-203AB Package 1N3904 1n3905 SV0200 SV0300-121
Contextual Info: HIGH-SPEED DIODES Item Number Part Number 10 Max A VRRM (V) trr Max (s) VF IF Max @ Test (V) (A) Package Style High-Speed Diodes, General-Purpose (Co nt' d) 5 10 06K40 06K40R S6K40 S6K40R UF6005 SR6005 6FL60S02 PR6005 UF6006 SR6006 -PRSOos- 15 20 UF6007

2N5735

Abstract: 2sc113 BSW12 2N3400 2N2943 SFT713 u34c 2n1675 2n2718 2N5242
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Typ e + — Revised Specifications # Non-JEDE C type m anufactured outside u :s . a . t Switching type, also listed in Section 12

IRF150CF

Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152

EIA-364-20

Abstract: EIA-364-21 EIA-364-23 EIA-364-13 EIA-364-09 AXJ43 EIA36430 AXJ4 EIA-364-1312 EIA36409
Contextual Info: Connect To The Next 箱入数 タイプ Type レセプタクル Receptacle ご注文品番 Part number Embossed tape package 内箱 Inner carton 外箱 Outer carton 5,000個 AXJ436540G-M 1,000個 1,000 pcs. プラグ （ケーブル接続タイプ）AXJ443000-M

2sc113

Abstract: CI44
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

AF137

Abstract: transistor af138 2SA316 2SA315 987T1 988T1 989T1 2SA430 2SA314 AF136
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,