357 MARKING Search Results

marking C3Z

Abstract: marking C3Z SOT23 CMPTA44 npn 400V sot-23
Contextual Info: Central CMPTA44 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z

CHBTA13GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHBTA13GP SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts CURRENT 1.2 Ampere APPLICATION * High current gain applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) .086 (2.20) .007 (0.177) * NI .045 (1.15)

0701b

Abstract: VCXO
Contextual Info: Data Sheet 0701B CRYSTAL OSCILLATORS AE-X36DXXX-X Series PECL/LVPECL UHF VCXO Rev. M Description The AE-XXXX Series of voltage controlled crystal oscillators VCXO provides ultra high frequency with PECL/LVPECL or differential Sine-Wave complementary outputs.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR DUAL SWITCHING DIODES BAW74 SOT-23 Formed SMD Package 3 Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking BAW74 - JD

1df transistor

Abstract: FJV42
Contextual Info: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =3Z Designed for Extremely High Voltage Applications

4 pin bridge rectifier package

Abstract: diode rectifier 10ma full wave bridge rectifier MARKING CODE 21 marking sot 5 pin marking code 21 363
Contextual Info: CMKBR-6F Central TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM SILICON BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKBR-6F is a monolithic silicon full wave bridge rectifier, epoxy molded in a SOT-363 surface mount package. This device has been designed for use in computers

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

2SK3131

Contextual Info: 2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance

low noise transistor

Abstract: CMPT2484 C1u TRANSISTOR
Contextual Info: Central CMPT2484 TM Semiconductor Corp. NPN SILICON LOW NOISE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2484 type is an NPN silicon low noise transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications.

npn 400V sot-23

Abstract: CMPTA46 transistor marking 020 marking code 10 sot23
Contextual Info: Central CMPTA46 TM Semiconductor Corp. SURFACE MOUNT NPN EXTREMELY HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA46 type is a surface mount epoxy molded NPN silicon planar epitaxial transistors designed for extremely high voltage applications.

SOT143 Marking l51

Abstract: code l51 L51 transistor marking sot-143 BAS56
Contextual Info: Central BAS56 TM Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an

D96 marking

Abstract: diode marking code 15 marking code R5 sot23 marking d2 SOT23 marking D96 common anode schottky power TA MARKING CODE transistor marking d76 CMPD6263 CMPD6263C
Contextual Info: Central CMPD6263 CMPD6263A CMPD6263C CMPD6263S TM Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The Central Semiconductor CMPD6263 series types are Silicon Schottky diodes designed for low current surface mount fast switching applicaitons requiring a low forward voltage

CMXD2004TO

Abstract: marking D3 SOT26
Contextual Info: Central CMXD2004TO TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three 3 Isolated High Voltage Silicon Switching Diodes arranged

BAS40WS

Contextual Info: BAS40WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free SCHOTTKY DIODE 200m AMPERES 40VOLTS Features: * Low Turn-on Voltage * Fast Switching * Ultra-Small Surface Mount Package Mechanical Data: * Case: SOD-323, Plastic * Case Material-UL Flammability Rating Classification 94V-0

702 mosfet

Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

marking code 4f amplifier

Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*

gali64

Abstract: mmic marking code DF782 Gali-6
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*

Marking KA3

Contextual Info: MMBD4448 Surface Mount Switching Diode Voltage Range 75 Volts 350m Watts Power Dissipation SOT-23 Features 0.020 0.51 0.015(0.37) Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications

MMBT5089

Abstract: MMBT5088
Contextual Info: Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

marking code C37

Abstract: transistor c37 dual npn 500ma CMLT3410 CMLT3474 CMLT7410 marking code C34
Contextual Info: Central CMLT3410 CMLT3410G* NPN CMLT7410 CMLT7410G* PNP CMLT3474 CMLT3474G* NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: These dual devices are low VCE(SAT) silicon transistors in a PICOmini™ surface mount package

transistor k7g

Abstract: IC K07 "dual TRANSISTORs" sot363 MARKING 2907A 2907a CMKT2907A 2907a TRANSISTOR PNP "two TRANSISTORs" sot-363 marking code 04 sot-363
Contextual Info: CMKT2907A CMKT2907AG ULTRAmini SURFACE MOUNT DUAL PNP SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and

Contextual Info: Product specification MMBZ5221B SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 General Purpose, Medium Current +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base

Contextual Info: Product specification MMBZ5225B SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 General Purpose, Medium Current +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base