3512 H DIODE Search Results

T 3512 H diode

Abstract: diode T 3512 H ixys dwn 110-12
Contextual Info: Rectifier Diode Chips DWN = cathode on top, DWP = anode on top V Type U m m max 25*C DWN 5 v r »F •r typ S ‘C 1W C l i s H V tnA mA - 08/12 8 0 0 - 1200 0.005 1 DWN 2 DWN 9 DWN 17DWN 21 DWN 35 DWN 50 DWN 75 DWN 1 1 0 DWN 340 DWN 347 - 12/16 12/16

T 3512 H diode

Abstract: diode T 3512 H ixys dwn 110-12
Contextual Info: Rectifier Diode Chips DW N = cathode on top, DW P = anode on lop v ’ «•I Type v F & I, X v T„ rT T , - : ft-C 25TC w « X W m« $ V * â c v DWN 5 -08/12 800-1200 0.005 1 1.1 DWN DWN DWN DWN DWN DWN DWN DWN DWN DWN 2 -12 /16 9 -12 /16 17-12/18 21 -12/18

DSA117-16

Abstract: dsai17-12a DSA1110 35-16A DSAI DSA1110-16 10MSA
Contextual Info: Rectifier Diodes lFAV= 2 - 160 A, Standard Diodes DS. , Avalanche Diodes (DSA.) VRRM Type * Delivery time on request ► New DS DSA DSA DSA DS DS DSA DSA DSA ► DSP ► DSP ► DSP V 1-12 D 1-12 D 1-16 D 1-18 D * 2-08 A 2-12 A 2-12 A 2-16 A 2-18 A* 8-08 A

diode T 3512

Abstract: 16 channel demux demux ic ic switch ttl 1A11 1B10 FST163233 IDT74FST163233
Contextual Info: 16-BIT 2:1 MUX/DEMUX SWITCH IDT74FST163233 ADVANCE INFORMATION Integrated Device Technology, Inc. their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source junction of this

diode T 3512

Abstract: 1A11 1B10 1B12 FST163233 IDT74FST163233 3512
Contextual Info: 16-BIT 2:1 MUX/DEMUX SWITCH IDT74FST163233 ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: • Bus switches provide zero delay paths • Low switch on-resistance: FST163xxx – 7Ω • TTL-compatible input and output levels • ESD > 2000V per MIL-STD-883, Method 3015;

ds 35-12 e

Abstract: 4508A DSA117-16 dsai17-12a DSAI11016F A 3150 V DSAI110
Contextual Info: Rectifier Diodes 'FA V = 2 - 77 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type FAV FSM T =100°C 45°C 10 ms New DS 1-12 D DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 2-08 A DS 2-12 A DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A DSP 8-08 AS OSP 8-12 AS

diode T 3512

Abstract: 1A11 1B10 FST163233 IDT74FST163233 3512 H diode
Contextual Info: 16-BIT 2:1 MUX/DEMUX SWITCH IDT74FST163233 ADVANCE INFORMATION Integrated Device Technology, Inc. their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source junction of this

T 3512 H diode

Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 D16 14 T7 11 T3 17 D2 T2 D5 20 NTC T5 8 19 6 15 3 D3 18 5 4 D4 D6 E72873 12 T4 13 See outline drawing for pin arrangement T6 9 10 24 Three Phase

T 3512 H diode

Abstract: diode T 3512 H ds 35-12 e E72873 6002e
Contextual Info: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 NTC T5 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 24 Three Phase

din 7504

Abstract: DSA 7504 35-04A D0203 A 1712 ds 35-12 e DSA-36W-12 36 L/bbc dsa diodes DSA 1.2
Contextual Info: Rectifier Diodes = 2 - 25 A, Standard Diodes DS. , Avalanche Diodes (DSA.) FAV Type V « -c Pr h U . kW 1.« A •V Package stylo V * See outlines on page 31 I Fig. 8 weiant 0.8 g 10 nw DSA 1-18 D * DSA 1-16 D • DS 1-16 D • DSA 1-14 D • DS 1-14 D

T 3512 H diode

Abstract: diode T 3512 H A5140 ds 35-12 e
Contextual Info: IGBT Modules Sixpack ^C25 V CES V CE sat typ. 45 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions v CES v CGR Tj = 25°C to 150°C T,J = 2 5 °C to 150°C;} FL = 2 0 kft VeES v GEM Continuous ±20 V Transient

T 3512 H diode

Abstract: ASEA fast thyristor ASEA thyristor diode T 3512 H ABB thyristor modules E 72873 ASEA abb diode ABB thyristor 5 TO 48 THYRISTOR FAST SWITCHING ABB Thyristor asea
Contextual Info: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-M odule D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor m odules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

PS-4512 diode

Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Contextual Info: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: iniXYS MWI 35-12 A! IGBT Modules Sixpack = 45 A = 1200 V VCE 8atlw.= 2.2V v ces Symbol Conditions VCES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; Rqe = 20 k£2 vGES v GEM Continuous Transient *C25 ^CSO ' cm *sc (SCSOA Maximum Ratings V V ±20 ±30 V

MR3500

Abstract: MR3512
Contextual Info: MR3500 - MR3512 AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1200 Volts Io : 35 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.342 8.69 0.332 (8.43) 5° NOM * Pb / RoHS Free

Contextual Info: IDT74FST163233 ADVANCE INFORMATION 16-BIT 2:1 MUX/DEMUX SWITCH FEATURES: • Bus switches provide zero delay paths • Low switch on-resistance: FS T 1 63 xx x -7 Q • TTL-compatible input and output levels • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0

diode T 3512

Abstract: AR3500 AR3512
Contextual Info: AR3500 thru AR3512 35 Amps. Automotive Rectifier Diodes Voltage Range 50 to 1200 Volts Forward Current 35 Amperes 5VM5EMI SEMICONDUCTOR Features ♦ ♦ ♦ ♦ ♦ H igh c u rre n t c a p a b ility High su rg e c u rre n t c a p a b ility High reliab ility

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

T 4512 H diode

Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

transistor 3504 npn

Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
Contextual Info: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803

dsdi 7-015 A

Abstract: DSDI 17-04 DSD 17-14 b DSDI 71-16 DSD 12-16 dsdi 7-015 DSDI DSDI 7-01 B DSDI 20-01 b DSDI 17-14 b
Contextual Info: A S E A BROUN/ABB SENICON Schnelle Dioden Diode DSD Vrrm Fast switching diodes If r m s Ki If a v i Tc - 100°C A °C A(°C) DSDI 5-04 A DSD1 5-06 A DSDI 5-08 A 400 600 800 10 DSDI 7-01 A DSDI 7-015 A DSDI 7-02 A 100 10 ft vF If Ir r m (10 ms) 10 ms T y j =• 45°C

A2529

Abstract: CS 8-12 10MSA
Contextual Info: Thyristors, SCRs S C R = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all oth e r co ntro lle d sem i-co n d uctor components, they feature the highest current capacity per chip area, especially at high

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com MR3500 - MR3512 AUTOMOTIVE

T 4512 H diode

Abstract: diode T 4512 H cs 23-12 cs 45-12 iol
Contextual Info: , Thyristors SCRs SC R = Silicon Controlled Rectifier Phase Control Thyristors {S C R = S ilic o n C o n tro lle d R e c tifie r) Thyristo rs are v e ry rugged devices. C o m p a re d to all o ther controlled se m ico n d u cto r com pone nts, they featu re