351 FET Search Results

UART using VHDL

Abstract: uart c code nios processor
Contextual Info: Simulating Nios II Embedded Processor Designs Application Note 351 May 2004, ver.1.0 Introduction Altera Corporation AN 351-1.0 The increasing pressure to deliver robust products to market in a timely manner has amplified the importance of comprehensively verifying

TMCM-351

Abstract: CANopen TMC-423 TMC249 TMC428
Contextual Info: TMCM-351 TMCLTM Firmware Manual Version: 1.02 2009-JUL-31 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMCM-351 TMCL Firmware Manual V1.02/2009-JUL-31 Table of contents 1 2 3 4 5 Life support policy . 4

PILZ pnoz

Abstract: guardmaster atlas 3 safety switch Pilz safety relay Electronic security code lock system - Door Lock - Safe Lock circuit diagram guardmaster atlas 4 GuardMaster CENTURION circuit diagram of door interlock system guardmaster atlas safety switch 343-981 323-987
Contextual Info: Issued November 1993 B16718 Machineguardinterlocking RS stock no. 325-703 323-993 351-241 351-257 323-971 323-987 325-141 325-157 325-129 325-135 324-772 333-574 759-213 343-981 350-074 319-663 319-269 319-275 319-281 Description Rotacam 2N/C contact block

Contextual Info: Microwave Wideband, GaAs FET Amplifiers AFT, AMT, AWT ♦ 0.1 to 4.5 GHz Frequency 0.5 to 2.0 GHz Frequency Range. 1-352 2.0 to 4.0 GHz Frequency

AN351

Abstract: uart verilog code AN-351-1 avalon mm vhdl
Contextual Info: Simulating Nios II Embedded Processor Designs AN-351-1.2 November 2008 Introduction This application note describes the process of generating an RTL simulation environment using Nios II example designs, SOPC Builder, and the Nios II software build tools. It also

151-03 metal can

Abstract: lf351 LF151 LF251 33DM M3J3 33DH high Q notch filter 30hm
Contextual Info: ¿ Z T ^ 7£ S G S -T H O M S O N L F 151 L F 251 - L F 351 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION

P90CE201AEB

Abstract: DCJ11 0011120 wd 969 ir P90CE201 QFP64 1021 NAPC
Contextual Info: bflE J> m NAPC/PHILIPS SEMICOND bbS3^24 00=51110 351 « S I C 3 Philips Semiconductors Preliminary specification 16-bit microcontroller 1. P90CE201 FEATURES 2. GENERAL DESCRIPTION The P90CE201 is a member of the P9XCXXX family of highly integrated 16-bit microcontrollers for use in a wide

full scale output characteristic of dac

Abstract: AN-351 digital to analog variable RESISTOR NETWORk
Contextual Info: ANALOG ► DEVICES AN-351 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Ask the Applications Engineer—2 by James Bryant WHEN IT COMES TO TRIMMING . . Q: I need some advice about trimming offsets and gains.

equivalent ic to PAL 007 E MOSFET

Abstract: mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent
Contextual Info: INDEX Order Code Description Manufacturer 789-719 789-707 792-731 792-561 704-453 704-441 792-160 791-787 790-722 703-722 703-710 597-351 597-363 597-375 941-864 705-263 663-773 705-275 704-957 786-809 786-810 786-822 795-410 505-031 792-962 793-061 793-358

zilog Z280

Abstract: Z280 CPU z280 EPU
Contextual Info: ZILOG INC blE; ]> < £ 2 iL G E m c^ fl4[]43 Q 02 S 2 1 S 351 m i l l Product Sp ecificatio n Z280 NPU Microprocessor Unit FEATURES • Designed in CMOS for low power operations. ■ Enhanced Z80 CPU instruction set that maintains object-code compatibility with Z80 microprocessor.

2N3307 MOTOROLA

Abstract: 2N3307 2N3308 GE-17
Contextual Info: M O T OR OL A SC X S T R S /R F la E ° I b3t?2S l1 000^351 fe, | 2N3307 2N3308 CASE 20-03, STYLE 10 TO-72 TO-206AF M A X IM U M RATINGS Symbol 2N3307 2N3308 Unit VCEO 35 25 Vdc Colfector*Emitt6r Voltage Vc es 40 30 Vdc Collector-Base Voltage VCBO 40 30

Contextual Info: • M 3 0 2 5 7 1 D 0 S 3 T 4 a 2 HARRIS 7 f l b ■ H A S IR F350/351/352/353 IRF350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-2Q4AA • 13A and 15.0A, 350V - 400V • i"DS on) = ° -3 fi and 0 .4 fi

LM4F120H5QR

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233H6PM Microcontroller identical to LM4F120H5QR D ATA SHE E T D S -T M 4C 1233 H6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 351 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

163P245

Contextual Info: 16-BIT BUS SWITCH IDT74 FST163245 IDT74FST163P245 ADVANCE INFORMATION no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source junction of this FET is adequately forward-biased the device

an 17830

Abstract: S3V 83 an 17830 a
Contextual Info: HEXAWAVE HWL30NPA Hexawave, Inc. L-Band Medium Power GaAs FET Description Outline Dimensions The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.

LF351

Abstract: LF351AN LF351BN BT099 Lf351 op LF351 OPERATIONAL AMPLIFIER lf351A LF151AGC LF151AH LF151BGC
Contextual Info: a » SGS "THOMSON l f 2s i /a / b LF351/A/B M Û ^ O iL iû ïlM tq O O S J-FET INPUT SINGLE OP-AMPs LOW POWER CONSUMPTION i WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE i LOW INPUT BIAS AND OFFSET CURRENT i OUTPUT SHORT-CIRCUIT PROTECTION i HIGH INPUT IMPEDANCE J-FET INPUT

IXTH40N25

Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
Contextual Info: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025

2SJ297

Contextual Info: 2SJ297 L , 2SJ297(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

Contextual Info: art A M P c o m p a n y Single/Quad Drivers for GaAs FET Switches and Attenuators SWD-109/119 V 2.00 SO-8 SWD-109 Features • llijili S|X 'c d C M O S T e c h n o lo g y • Sinj-k- C h a n n e l (S W D - ID V ) • Q u a d C h a n n e l ( S W I ) - I 19)

smd rgs

Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

MG15D4GM1

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D r ain is Isolated from Case. . U MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . L o w D r a in-Source ON Resistance

2SD1664Q

Abstract: 2SD1664-Q BD9751FV RB081L-40 RB521S-30 RES070N03 SSOP-B28 RB081L40
Contextual Info: BD9751FV Regulators 2-channel synchronous rectifier DC/DC converter BD9751FV BD9751FV is a high-efficient 2-channel synchronous rectifier step-down DC/DC converter controller. External high side N-channel FET can be driven directly by the built-in charge-pump driver.

td 1410

Abstract: 2SK761
Contextual Info: Power F-MOS FET 2SK761 2SK761 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON r e s is ta n c e R Db on : R ds (on) = 0 . 1 5 f i (ty p .) Unit: mm 5.2max. 15 5max. • High sw itch in g ra te : tf = 1 2 0 n s (ty p .) • No seco n d a ry breakdow n

Contextual Info: GaAs FET MMIC Products Capability Guide CUSTOM MMIC PRODUCTS — MA4GM400 SERIES DIGITAL STEP ATTENUATORS SWITCHED ELEMENT 0.3 MHz TO 2.0 GHz SWITCHED LINE PHASE SHIFTERS (500 MHz — 2.0 GHz) 1 o— CAN BE SUPPLIED WITH CMOS DRIVERS - o J, ?i ? i i i i