350PF Search Results

Contextual Info: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

Contextual Info: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

Contextual Info: ATP602 Ordering number : ENA1543A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP602 General-Purpose Switching Device Applications Features • • ON-resistance RDS on =2.1Ω (typ.) 10V drive • • Input capacitance Ciss=350pF (typ.) Halogen free compliance

Contextual Info: Ordering number : ENA1903A ATP613 N-Channel Power MOSFET http://onsemi.com 500V, 5.5A, 2Ω, ATPAK Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance ON-resistance RDS(on)=1.55Ω(typ.) 10V drive

Contextual Info: Ordering number : ENA1543A ATP602 N-Channel Power MOSFET http://onsemi.com 600V, 5A, 2.7Ω, ATPAK Features • • ON-resistance RDS on =2.1Ω (typ.) 10V drive • • Input capacitance Ciss=350pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

A1903

Abstract: ATP613
Contextual Info: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

ATP613

Abstract: ENA1903A
Contextual Info: ATP613 Ordering number : ENA1903A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

Contextual Info: ATP602 Ordering number : ENA1543A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP602 General-Purpose Switching Device Applications Features • • ON-resistance RDS on =2.1Ω (typ.) 10V drive • • Input capacitance Ciss=350pF (typ.) Halogen free compliance

XF0557

Contextual Info: 1. D im ensions: 0.51 Max — I •s o c O ^ C 0.245 Max |— 3. E lectrical i Isolation Voltage: 1500VAC PR I to SEC ) Turns Ratio: 1CT:1CT (P r i/ S e c ) PRI 0CL: 5.5uH MIN. 100KHz 50mV n 0.030 — I 0.016 Specification s: ®25°C Rise Time: 350pF Max

Contextual Info: ATP613 Ordering number : ENA1903A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

Contextual Info: OPA OPA336 OPA2336 OPA4336 433 6 OPA 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● ● ● ● OPA336 series microPower CMOS operational amplifiers

Contextual Info: OPA OPA336 OPA2336 OPA4336 433 6 OPA 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● ● ● ● OPA336 series microPower CMOS operational amplifiers

MT90812AL1

Abstract: TGE-5 EB32
Contextual Info: MT90812 Integrated Digital Switch IDX Advance Information Mar 2011 Features • • • • • • • • • • • • • • • • • • MT90812AP MT90812AL MT90812APR MT90812AP1 MT90812AL1 MT90812APR1 192 channel x 192 channel non-blocking switching

Asus MONITOR MOTHERBOARD CIRCUIT MANUAL

Abstract: T2D 83 diode gp026 st GP025 82430TX 82371EB Asus PC MOTHERBOARD CIRCUIT schematic diode T75A Asus PC MOTHERBOARD CIRCUIT MANUAL 8272A floppy disk controller block diagram
Contextual Info: PRELIMINARY DRAFT Intel Extended Temperature 82371EB PCI-TO-ISA/IDE Xcelerator PIIX4E Datasheet  Integrated 16 x 32-bit Buffer for IDE PCI Burst Transfers  Supports Glue-less “Swap-Bay” Option with Full Electrical Isolation Supported Kits for both Pentium and

ISL3178AE

Abstract: ISL3178AEMBZ
Contextual Info: ISL3178AE Data Sheet May 6, 2009 ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers The Intersil ISL3178AE is ±15kV IEC61000 ESD Protected, 3.3V-powered, single transceivers that meet both the

Contextual Info: OPA OPA336 OPA2336 OPA4336 433 6 OPA 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● ● ● ● OPA336 series microPower CMOS operational amplifiers

NE-2H

Abstract: PWS740 ISO120 ISO120BG ISO120G ISO120SG ISO121 ISO121BG ISO121G PT100 table
Contextual Info: ISO120 ISO121 Precision Low Cost ISOLATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● INDUSTRIAL PROCESS CONTROL: Transducer Isolator for Thermocouples, RTDs, Pressure Bridges, and Flow Meters, 4mA to 20mA Loop Isolation ● GROUND LOOP ELIMINATION

upsd

Abstract: UPS3200 TQFP52 TQFP80 uPSD3200 uPSD3233B uPSD3233BV uPSD3234A uPSD3234A-40 uPSD3234BV
Contextual Info: uPSD3234A, uPSD3234BV uPSD3233B, uPSD3233BV Flash Programmable System Devices with 8032 Microcontroller Core FEATURES SUMMARY • The uPSD323X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD323X Devices of Flash PSDs feature dual banks of Flash memory, SRAM,

23TI

Abstract: UPS3200 TQFP52 TQFP80 uPSD3253B uPSD3253BV uPSD3254A uPSD3254BV uPSD325X BV-24
Contextual Info: uPSD3254A, uPSD3254BV uPSD3253B, uPSD3253BV Flash Programmable System Devices with 8032 Microcontroller Core FEATURES SUMMARY • The uPSD325X devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD325X devices of Flash PSDs feature dual banks of Flash memory, SRAM,

Contextual Info: Supertex inc. HV66 32-Channel LCD Driver with Separate Backplane Output Features General Description ►► HVCMOS technology ►► 32 push-pull CMOS output up to 60V ►► Low power level shifting ►► Shift register speed 5.0MHz ►► Latched data outputs

Contextual Info: OPA OPA336 OPA2336 OPA4336 433 6 OPA 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● ● ● ● OPA336 series microPower CMOS operational amplifiers

RTD PT100

Abstract: PWS740 ISO120 ISO120BG ISO120G ISO120SG ISO121 ISO121BG ISO121G
Contextual Info: ISO120 ISO121 Precision Low Cost ISOLATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● INDUSTRIAL PROCESS CONTROL: Transducer Isolator for Thermocouples, RTDs, Pressure Bridges, and Flow Meters, 4mA to 20mA Loop Isolation ● GROUND LOOP ELIMINATION

w90n740cdg

Abstract: driver circuit for irs 2110 tms 3874 W90N740 w90n740cd 30B4 diode aic 3860 alps 502C MII 75-12 A3 SCC16
Contextual Info: W90N740CD/W90N740CDG DATA SHEET WINBOND 32-BIT ARM7TDMI-BASED MICRO-CONTROLLER The information described in this document is the exclusive intellectual property of Winbond Electronics Corporation and shall not be reproduced without permission from Winbond.

S0135

Abstract: do216 fast diode ifm if 40 A transil SM2T14A SM2T18A SM2T27A Mite
Contextual Info: SM2T series Transient Voltage Suppressor: TRANSIL FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High Peak pulse power: 200 W 10/1000 µs 1000 W ( 8/20 µs) Stand-off voltage range 5 to 24V Unidirectional types Low clamping factor VCL/VBR Fast response time