34B SOT Search Results

SMD bl p71

Contextual Info: TOSHIBA TM P87CH 34B/K34B/M 34B CMOS 8 -BIT MICROCONTROLLER TMP87CH34BN, TMP87CK34BN, TMP87CM34BN The 87CH34B/K34B/M34B is the high speed and high performance 8 -bit single chip microcomputer. This MCU contains CPU core, ROM, RAM, input/output ports, six multi-function timer/counter, serial interface, on­

Contextual Info: bbSB^l 00c?Sb34 34b H A P X N AMER PHILIPS/ DIS CRET E BST39 BST40 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended fo r use in am plifier and switching applications. Complementary p-n-p types are BST15/16.

34A-100

Contextual Info: TIP34; A; B; C PHILIPS INTERNATIONAL 5bE 3 • 711002b 0043512 410 » P H I N SILICON POWER TRANSISTORS P-N-P epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are

smd transistor 41B

Abstract: SMD 41B sot23 5241B 5252B CMBZ-5251B smd 41B 5233B 5245B CMBZ-5245B CMBZ5230B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE

TOP 948

Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
Contextual Info: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

ic 41b sot23

Abstract: 46B smd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE

52B zener

Abstract: 5233B 5241b SMBZ-5250B 47B SOT23 5252B SMBZ-5239B SMBZ-5245B SMBZ5230B SMBZ-5230B
Contextual Info: SMBZ5230 THRU SMBZ5257 SILICON PLANAR ZENER DIODES, 500mW, SOT-23 PACKAGE PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0 2.6 0 .1 4 - * ^ 0.09 0.48 0.38 «a 3 44 2.6 RQ.1 .004 1-° ? 0.89 0,60 0.40 =

smd transistor 41B

Abstract: 5251B SMD 41B sot23 5241B zener 35b smd MARKING 8g 5233B 81F smd CMBZ-5245B SMD marking 8M zener
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS

1da sot-23

Abstract: 1da sot LS05-A FDC6304P SOIC-16 O443
Contextual Info: July 1997 FAIRCHILD S E M IC O N D U C T O R w FDC6304P Digital FET, Dual P-Channel General Description F e a tu re s These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

BDT61F

Abstract: 61AF BDT61BF BDT60AF BDT60BF BDT60CF BDT60F
Contextual Info: BDT61F; 61AF BDT61BF; 61CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope w ith an electrically insulated mounting base. They are recommended fo r applications such as audio output stages and general purpose amplifiers.

UHF amplifier module

Abstract: BGY119A BGY119B
Contextual Info: Philips Semiconductors Product specification UHF amplifier modules BGY119A; BGY119B FEATURES PINNING - SOT359A • Single 4.8 V nominal supply voltage PIN • 1.2 W output power DESCRIPTION 1 RF input • Easy control of output power by DC voltage 2 Vc • Very high efficiency typ. 55 %

Contextual Info: SGS-THOMSON BfflMELIÛîæiBSl BSP40/41 BSP42/43 MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL

Contextual Info: SEMICONDUCTOR i„ NC7SZ14 TinyLogic UHS Inverter with Schmitt Trigger Input General Description Features The NC7SZ14 is a single Inverter with Schmitt Trigger input from Fairchild’s Ultra High Speed Series of TinyLogicfM in the space saving SOT23 package. The device is fabricated

Contextual Info: SEMICONDUCTOR NC7S14 TinyLogic™ Inverter with Schmitt Trigger Input General Description Features The NC7S14 is a single high performance CMOS inverter with Schmitt Trigger input in the SOT23 package. The circuit design provides hysteresis between the positive-going and

sab 1009

Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

Contextual Info: SEMICONDUCTOR NC7SZ32 TinyLogic™ UHS 2-Input OR Gate General Description Features The NC7SZ32 is a single 2-Input OR Gate from Fairchild’s Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with advanced

Contextual Info: S E M IC O N D U C T O R tm NC7S32 TinyLogic 2-Input OR Gate General Description Features The NC7S32 is a single 2-Input high performance CMOS OR Gate in the SOT23 package. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit

Contextual Info: S E M IC O N D U C T O R ru NC7SZ126 TinyLogic UHS Buffer with 3-STATE Output General Description Features The NC7SZ126 is a single butter with 3-STATE output from Fairchild’s Ultra High Speed Series of Tinylogic in the space saving SOT23 package.The device is fabricated with ad­

Contextual Info: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

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Contextual Info: rSTOKO TK702XX 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Input Voltage Operation Single Battery Cell ■ Internal PNP Transistor ■ Pagers ■ Built-In Shutdown Control (Off Current, 8 |iA Typ) ■ Low Dropout Voltage (30 mV Typ)

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