33SOURCE Search Results

KUK7107-55AIE

Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7107-55AIE 1 .2 7 -0+ 0.1.1 TO-263 Features Integrated temperature sensor Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

ic 7446

Abstract: IC 7446 A data sheet ic 7446 diode 7446 IC 7446 data sheet smd rgs KUK7607-30B 7446 ic 7446 data sheet ld smd transistor
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-30B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

SMD Transistor nc

Abstract: VOLTAGE SUPPRESSOR SMD KDB7045L suppressor diode smd
Contextual Info: Transistors IC SMD Type N-Channel Logic Level PowerTrench MOSFET KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS ON = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON)

SMD Transistor nc

Abstract: TLV300
Contextual Info: Transistors IC SMD Type 200V N-Channel MOSFET KQB5N20 TO-263 4.5A, 200 V. RDS ON = 1.2 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 100% avalanche tested +0.1 0.81-0.1

Contextual Info: Transistors IC SMD Type Product specification KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS ON = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON)

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-55A TO-263 TrenchMOS TM 1 .2 7 -0+ 0.1.1 Features technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7107-55ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Integrated temperature sensor Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7109-75ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-75B TO-263 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type Logic level TOPFET KUK129-50DL TO-263 Unit: mm Features 1 .2 7 -0+ 0.1.1 TrenchMOS output stage Current limiting +0.1 1.27-0.1 +0.2 4.57-0.2 Protection latched reset by input 0.1max +0.1 1.27-0.1 Control of output stage and supply of overload protection

ld smd transistor

Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax

SMD Transistor nc

Contextual Info: Transistors IC SMD Type 500V N-Channel MOSFET KQB9N50 TO-263 9A, 500 V. RDS ON = 0.73 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2

Contextual Info: Transistors IC SMD Type 500V N-Channel MOSFET KQB2N50 TO-263 2.1A, 500 V. RDS ON = 5.3 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 6.0nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1

Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40AIE TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54

Contextual Info: Transistors IC SMD Type N-Channel PowerTrenchTMMOSFET KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features @ VGS = 10 V 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS ON .

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7604-40A 1 .2 7 -0+ 0.1.1 TO-263 Features TrenchMOSTM technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2

Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF9640S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount Available in Tape & Reel +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Fast Switching Ease of Paralleling 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54

Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7606-55B TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Q101 compliant +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

SMD Transistors nc

Abstract: 4600 smd 2SJ605 SMD Transistor nc v4600
Contextual Info: Transistors IC SMD Type MOS Field Effect Transistors 2SJ605 TO-263 1 .2 7 -0+ 0.1.1 MAX. VGS = -10 V, ID = -33 A RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A) Low input capacitance 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L TO-263 1 .2 7 -0+ 0.1.1 Features +0.2 4.57-0.2 Low Crss typical 175 pF . 5 .2 8 -0+ 0.2.2 Fast switching speed. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2

Contextual Info: Transistors IC SMD Type 250V N-Channel MOSFET KQB6N25 TO-263 5.5A, 500 V. RDS ON = 1 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 6.6nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1

Contextual Info: Transistors IC SMD Type 200V P-Channel MOSFET KQB12P20 TO-263 -11.5A, -200V, RDS on = 0.47 1 .2 7 -0+ 0.1.1 Features @VGS = -10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge ( typical 31 nC) 5 .2 8 -0+ 0.2.2 Improved dv/dt capability 0.1max +0.1

Contextual Info: Transistors IC SMD Type Logic level TOPFET KUK130-50DL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features TrenchMOS output stage Current limiting +0.1 1.27-0.1 +0.2 4.57-0.2 Protection latched reset by input 0.1max +0.1 1.27-0.1 Control of output stage and supply of overload protection

Contextual Info: Transistors IC SMD Type 60V P-Channel MOSFET KQB27P06 TO-263 -27A, -60V, RDS on = 0.07 1 .2 7 -0+ 0.1.1 Features Unit: mm @VGS = -10 V +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 Improved dv/dt capability 175 +0.1 0.81-0.1 2.54 maximum junction temperature rating